Abstract:
A meta-optical device and a method of manufacturing the same are provided. The method includes depositing a group III-V compound semiconductor on a substrate, forming an anti-oxidation layer, performing crystallization by using post annealing, removing the anti-oxidation layer, and manufacturing a meta-optical device by using patterning.
Abstract:
Example embodiments relate to a nanostructure including a conductive region and a nonconductive region, wherein the conductive region includes at least one first nanowire, and the nonconductive region includes at least one second nanowire that is at least partially sectioned, a method of preparing the nanostructure, and a panel unit including the nanostructure.
Abstract:
Provided are meta-surface optical device and methods of manufacturing the same. The meta-surface optical device may include a meta-surface arranged on a region of a substrate and a light control member arranged around the meta-surface. The light control member may be arranged on or below the substrate. A material layer formed of the same material used to form the meta-surface may be disposed between the light control member and the substrate. Also, the meta-surface may be a first meta-surface arranged on an upper surface of the substrate, and a second meta-surface may be arranged on a bottom surface of the substrate. Also, the meta-surface may include a first meta-surface and at least one second meta-surface may formed on the first meta-surface, and the light control member may be arranged around the at least one second meta-surface.
Abstract:
Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includes an amorphous material, and a thickness of the at least one crystallization preventing layer is less than a thickness of the at least one dielectric layer.
Abstract:
An optical filter may include a first reflector and a second reflector. The first reflector may include a plurality of first gratings having a first sub-wavelength dimension and being arranged to recur at a first interval in a first direction. The second reflector may be spaced apart from the first reflector and include a plurality of second gratings having a second sub-wavelength dimension and arranged to recur at a second interval in a direction parallel to the first direction. The first reflector and the second reflector may include different materials or different geometric structures from each other. Accordingly, it is easy to adjust the transmission wavelength characteristics of the optical filter.
Abstract:
An optical filter may include a first reflector and a second reflector. The first reflector may include a plurality of first gratings having a first sub-wavelength dimension and being arranged to recur at a first interval in a first direction. The second reflector may be spaced apart from the first reflector and include a plurality of second gratings having a second sub-wavelength dimension and arranged to recur at a second interval in a direction parallel to the first direction. The first reflector and the second reflector may include different materials or different geometric structures from each other. Accordingly, it is easy to adjust the transmission wavelength characteristics of the optical filter.
Abstract:
A method of designing a meta optical device is provided. The method includes: setting, via a processor, design data for arrangement and dimensions of a nanostructure of the meta optical device, according to a function to be implemented by the meta optical device; obtaining a phase change graph with respect to a change in the dimensions; setting a shape dimension region with phase defect in the phase change graph; and substituting a shape dimension with phase defect, which is included in the shape dimension region with phase defect among the dimensions included in the design data, with a substitution value that is outside the shape dimension region with phase defect. Accordingly, a meta optical device having no phase defect is implemented.
Abstract:
A thermal image sensor includes a substrate; a composite layer including an absorption layer and a sensor array layer provided below the absorption layer, the sensor array layer including a plurality of temperature sensing cells, the composite layer having a pattern formed therein, and the pattern including at least one hole penetrating through the absorption layer; and a support separating the substrate from the composite layer.
Abstract:
Provided are meta-surface optical device and methods of manufacturing the same. The meta-surface optical device may include a meta-surface arranged on a region of a substrate and a light control member arranged around the meta-surface. The light control member may be arranged on or below the substrate. A material layer formed of the same material used to form the meta-surface may be disposed between the light control member and the substrate. Also, the meta-surface may be a first meta-surface arranged on an upper surface of the substrate, and a second meta-surface may be arranged on a bottom surface of the substrate. Also, the meta-surface may include a first meta-surface and at least one second meta-surface may formed on the first meta-surface, and the light control member may be arranged around the at least one second meta-surface.
Abstract:
Provided in a phase shifting device including a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.