公开(公告)号：US20240203788A1

公开(公告)日：2024-06-20

申请号：US18541091

申请日：2023-12-15

Applicant: Samsung electronics CO., LTD. ,  Incheon national university research & business foundation

Inventor： Eunhyoung CHO ,  Sunghee Lee ,  Jeongyub Lee ,  Hanboram Lee

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76849 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76861 ,  H01L21/76879

Abstract: A method of selectively forming a layer according to atomic layer deposition includes providing a substrate which includes a first region consisting of a first material and having a first surface and a second region consisting of a second material and having a second surface, forming a first reaction inhibition layer on the second surface using a reaction inhibitor selectively adsorbed on the second surface, selectively forming a first deposition layer on the first surface using a first precursor and a first reactant, wherein the first reactant reacts with the first precursor to form an atomic layer and does not react with the reaction inhibitor to form the atomic layer, and converting the first reaction inhibition layer on the second surface into a second deposition layer using a second reactant which reacts with the first reaction inhibition layer to form the atomic layer.

公开(公告)号：US20190087044A1

公开(公告)日：2019-03-21

申请号：US16134471

申请日：2018-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunhyoung CHO ,  Bonwon KOO ,  Hyunjoon KIM ,  Haesung KIM ,  Jungyun WON

IPC: G06F3/041 ,  H01L27/32 ,  G06F3/044 ,  G06K9/00

CPC classification number: G06F3/0412 ,  G06F3/044 ,  G06K9/0002 ,  H01L27/323 ,  H01L27/3234 ,  H01L27/3244

Abstract: Provided are a pattern structure for preventing a moiré pattern from becoming visible, and a display apparatus using the same. The pattern structure includes a first element pattern including a plurality of first elements arranged regularly at a first pitch; a second element pattern including a plurality of second elements arranged regularly at a second pitch, the second element pattern being provided on the first element pattern; and a filling layer configured to fill gaps among the plurality of second elements, between adjacent ones thereof. A difference between transmittances of the second element and the filling layer is about 5% or less and thus, a moiré pattern occurring due to the overlapping of the first element pattern and the second element pattern may be prevented from becoming visible.

公开(公告)号：US20230326949A1

公开(公告)日：2023-10-12

申请号：US18111375

申请日：2023-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongyub LEE ,  Youngchul LEEM ,  Eunhyoung CHO

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14625 ,  H01L27/14694

Abstract: Provided is an image sensor including a plurality of first electrode layers spaced apart from each other, a second electrode layer opposite to the plurality of first electrode layers, and a pixel layer provided between the plurality of first electrode layers and the second electrode layer, the pixel layer including a plurality of nanorod pixels, wherein a size of each nanorod pixel among the plurality of nanorod pixels is less than 1 μm, wherein the plurality of nanorod pixels include a first pixel including a compound semiconductor, and wherein the first pixel includes a first compound semiconductor layer doped with a first dopant, a second compound semiconductor layer that is undoped, and a third compound semiconductor layer doped with a second dopant different from the first dopant.

公开(公告)号：US20210395888A1

公开(公告)日：2021-12-23

申请号：US17336773

申请日：2021-06-02

Applicant: Samsung Electronics Co., Ltd. ,  INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATION

Inventor： Eunhyoung CHO ,  Hanboram LEE ,  Sunghee LEE ,  Jeongyub LEE ,  Chi Thang NGUYEN

IPC: C23C16/455 ,  C23C16/40

Abstract: A method and an apparatus for filling a gap by using an atomic layer deposition (ALD) method are provided. The method includes forming a first reaction inhibition layer by adsorbing a reaction inhibitor onto a side wall of the gap, forming a first precursor layer by adsorbing a first reactant onto the bottom of the gap and the side wall of the gap around the bottom of the gap, and forming a first atomic layer on the bottom of the gap and the side wall of the gap around the bottom of the gap. The reaction inhibitor includes a precursor material that does not react with a second reactant. The first reaction inhibition layer may have a density gradient in which a density of the reaction inhibitor decreases toward a bottom of the gap. The forming the first atomic layer includes adsorbing the second reactant onto the first precursor layer.

公开(公告)号：US20230244017A1

公开(公告)日：2023-08-03

申请号：US17891332

申请日：2022-08-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunhyoung CHO ,  Hyochul Kim ,  Sunghee Lee ,  Jeongyub Lee

IPC: G02B5/28

CPC classification number: G02B5/285

Abstract: An optical apparatus includes a lower optical layer; a nanostructure layer disposed on the lower optical layer and having an active region and a non-active region; and a reflective pad disposed between the lower optical layer and the nanostructure layer to face the non-active region of the nanostructure layer, wherein the nanostructure layer includes a first dielectric patterned in the active region and unpatterned in the non-active region and a second dielectric filled between patterns of the first dielectric, and the first dielectric includes a first material and the second dielectric includes a second material different from the first material and having a different refractive index from a refractive index of the first material.

公开(公告)号：US20210088694A1

公开(公告)日：2021-03-25

申请号：US16789675

申请日：2020-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongyub LEE ,  Changseung LEE ,  Kideok BAE ,  Eunhyoung CHO

IPC: G02B1/14 ,  G02B1/00 ,  G02B27/10 ,  G02B5/20

Abstract: An optical thin film includes a support layer and a dielectric layer on the support layer. The dielectric layer has a refractive index greater than that of the support layer. The dielectric layer includes a compound ADX, which includes a Group 3 element A, a Group 5 element D, and an element X having an atomic weight smaller than an atomic weight of A or D. The optical thin film may exhibit light transmission having a high refractive index and low absorptivity.

公开(公告)号：US20230070312A1

公开(公告)日：2023-03-09

申请号：US17740838

申请日：2022-05-10

Applicant: Samsung Electronics Co., Ltd. ,  INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATION

Inventor： Eunhyoung CHO ,  Sunghee LEE ,  Jeongyub LEE ,  Han-Bo-Ram LEE

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/40

Abstract: A method and an apparatus for filling a gap by using an atomic layer deposition (ALD) method are provided. The method includes forming a first reaction inhibition layer on a side wall of the gap; forming a first precursor layer by adsorbing a first reactant into a bottom of the gap and the side wall of the gap around the bottom of the gap; and forming a first atomic layer on the bottom of the gap and the side wall of the gap around the bottom of the gap by adsorbing a second reactant into the first precursor layer. The forming of the first reaction inhibition layer may include adsorbing a first reaction inhibitor into the side wall of the gap; and forming a second reaction inhibitor by removing a specific ligand from the first reaction inhibitor.

公开(公告)号：US20170064839A1

公开(公告)日：2017-03-02

申请号：US15065488

申请日：2016-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongyub LEE ,  Yunsung Woo ,  Changseung LEE ,  Eunhyoung CHO

IPC: H05K3/02 ,  B23K26/384 ,  B23K26/0622 ,  H05K3/18

CPC classification number: B23K26/0622 ,  B23K26/0624 ,  B23K26/082 ,  B23K26/083 ,  B23K26/0853 ,  B23K26/0869 ,  B23K26/384 ,  B23K26/386 ,  B23K26/389 ,  H01L31/1884 ,  H05K3/0047 ,  H05K3/146 ,  H05K2201/0108 ,  H05K2201/0145 ,  H05K2201/0154 ,  H05K2201/0323 ,  H05K2201/10128 ,  H05K2203/107

Abstract: A method of patterning holes includes placing a substrate on a stage of a laser system, the substrate having a graphene layer on a surface thereof, generating a pulse laser from the laser system, and forming a plurality of hole patterns spaced apart from each other on the graphene layer by irradiating the pulse laser while the graphene layer is in motion.

Abstract translation: 图案化孔的方法包括将基板放置在激光系统的台上，所述基板在其表面上具有石墨烯层，从激光系统产生脉冲激光，并且形成多个彼此间隔开的孔图案 石墨烯层通过在石墨烯层运动时照射脉冲激光器。

公开(公告)号：US20160133349A1

公开(公告)日：2016-05-12

申请号：US14808360

申请日：2015-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunhyoung CHO ,  Inyong SONG ,  Changseung LEE ,  Chan KWAK ,  Jaekwan KIM ,  Jooho LEE ,  Jinyoung HWANG

IPC: H01B1/22 ,  D06M23/00 ,  C23F1/32 ,  D06M15/564

CPC classification number: H01B1/22 ,  B82Y10/00 ,  B82Y40/00 ,  C23F1/02 ,  C23F1/14 ,  C23F1/30 ,  C23F1/40 ,  G06F3/041 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04103 ,  G06F2203/04112 ,  H01L29/0673 ,  H01L29/413 ,  H01L31/022466 ,  H01L33/42

Abstract: Example embodiments relate to a nanostructure including a conductive region and a nonconductive region, wherein the conductive region includes at least one first nanowire, and the nonconductive region includes at least one second nanowire that is at least partially sectioned, a method of preparing the nanostructure, and a panel unit including the nanostructure.

Abstract translation: 示例实施方案涉及包括导电区域和非导电区域的纳米结构，其中所述导电区域包括至少一个第一纳米线，并且所述非导电区域包括至少部分切割的至少一个第二纳米线，制备纳米结构的方法， 以及包括纳米结构的面板单元。