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1.发明申请NANOSTRUCTURE, METHOD OF PREPARING THE SAME, AND PANEL UNITS COMPRISING THE NANOSTRUCTURE 审中-公开纳米结构，其制备方法和包含纳米结构的面板单元公开(公告)号：US20160133349A1
公开(公告)日：2016-05-12
申请号：US14808360
申请日：2015-07-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eunhyoung CHO , Inyong SONG , Changseung LEE , Chan KWAK , Jaekwan KIM , Jooho LEE , Jinyoung HWANG
IPC: H01B1/22 , D06M23/00 , C23F1/32 , D06M15/564
CPC classification number: H01B1/22 , B82Y10/00 , B82Y40/00 , C23F1/02 , C23F1/14 , C23F1/30 , C23F1/40 , G06F3/041 , G06F3/0412 , G06F3/044 , G06F2203/04103 , G06F2203/04112 , H01L29/0673 , H01L29/413 , H01L31/022466 , H01L33/42
Abstract: Example embodiments relate to a nanostructure including a conductive region and a nonconductive region, wherein the conductive region includes at least one first nanowire, and the nonconductive region includes at least one second nanowire that is at least partially sectioned, a method of preparing the nanostructure, and a panel unit including the nanostructure.
Abstract translation: 示例实施方案涉及包括导电区域和非导电区域的纳米结构，其中所述导电区域包括至少一个第一纳米线，并且所述非导电区域包括至少部分切割的至少一个第二纳米线，制备纳米结构的方法， 以及包括纳米结构的面板单元。
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公开(公告)号：US20180226169A1
公开(公告)日：2018-08-09
申请号：US15928397
申请日：2018-03-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Inhyuk SON , Hyunjae SONG , Inyong SONG , Jaeman CHOI , Seungsik HWANG , Junhwan KU , Jonghwan PARK , Yeonji CHUNG
IPC: H01B1/04 , H01M4/62 , H01M4/587 , H01M4/48 , H01M4/38 , H01M4/36 , H01M4/1393 , H01M4/134 , H01M4/04 , H01B13/00
Abstract: A composite including: silicon (Si); a silicon oxide of the formula SiOx, wherein 0
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3.发明申请COMPOSITE, CARBON COMPOSITE INCLUDING THE COMPOSITE, ELECTRODE, LITHIUM BATTERY, ELECTROLUMINESCENT DEVICE, BIOSENSOR, SEMICONDUCTOR DEVICE, AND THERMOELECTRIC DEVICE INCLUDING THE COMPOSITE AND/OR THE CARBON COMPOSITE 有权复合材料，包括复合材料，电极，锂电池，电致发光器件，生物传感器，半导体器件和包括复合材料和/或碳复合材料的热电装置的碳复合材料公开(公告)号：US20150093648A1
公开(公告)日：2015-04-02
申请号：US14499624
申请日：2014-09-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Inhyuk SON , Hyunjae SONG , Inyong SONG , Jaeman CHOI , Seungsik HWANG , Junhwan KU , Jonghwan PARK , Yeonji CHUNG
CPC classification number: H01B1/04 , H01B13/0016 , H01B13/0026 , H01M4/0428 , H01M4/134 , H01M4/1393 , H01M4/366 , H01M4/386 , H01M4/48 , H01M4/587 , H01M4/625 , Y10T428/292
Abstract: A composite including: silicon (Si); a silicon oxide of the formula SiOx, wherein 0
Abstract translation: 包括：硅（Si）; 式SiO x的氧化硅，其中0
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