Semiconductor devices and methods for manufacturing the same

    公开(公告)号:US10242984B2

    公开(公告)日:2019-03-26

    申请号:US15614911

    申请日:2017-06-06

    Abstract: According to example embodiments, a semiconductor device and a method for manufacturing the same are provided, the semiconductor device includes a substrate including a PMOSFET region and an NMOSFET region, a first gate electrode and a second gate electrode on the PMOSFET region, a third gate electrode and a fourth gate electrode on the NMOSFET region, and a first contact and a second contact connected to the first gate electrode and the fourth gate electrode, respectively. The first to fourth gate cut electrodes define a gate cut region that passes between the first and third gate electrodes and between the second and fourth gate electrodes. A portion of each of the first and second contacts overlaps with the gate cut region when viewed from a plan view.

    Wearable assistance robot
    5.
    外观设计

    公开(公告)号:USD992741S1

    公开(公告)日:2023-07-18

    申请号:US29779793

    申请日:2021-04-21

    Abstract: FIG. 1 is a front perspective view of a wearable assistance robot showing our new design;
    FIG. 2 is a front view thereof;
    FIG. 3 is a rear view thereof;
    FIG. 4 is a left-side view thereof;
    FIG. 5 is a right-side view thereof;
    FIG. 6 is a top view thereof;
    FIG. 7 is a bottom view thereof; and,
    FIG. 8 is another front perspective view thereof.
    The broken lines in the figures depict portions of the wearable assistance robot that form no part of the claimed design.

    Semiconductor device including polygon-shaped standard cell

    公开(公告)号:USRE49545E1

    公开(公告)日:2023-06-06

    申请号:US17175381

    申请日:2021-02-12

    Abstract: A semiconductor device including a standard cell for implementing a logic element includes a first active region and a second active region extending in a second direction on a substrate and spaced apart from each other in a first direction perpendicular to the second direction, gate electrodes intersecting the first active region and the second active region, and source regions and drain regions formed on the first and second active regions at both sides of each of the gate electrodes. A boundary of the standard cell has a polygonal shape, excluding a quadrilateral shape, when viewed in a plan view. As a result, an area of the standard cell may be reduced to reduce a size of the semiconductor device.

    Wireless controller for internet of things, networks, and smart devices

    公开(公告)号:USD1021862S1

    公开(公告)日:2024-04-09

    申请号:US29839378

    申请日:2022-05-20

    Abstract: FIG. 1 is a top perspective view of a wireless controller for internet of things, networks, and smart devices showing our new design;
    FIG. 2 is a front elevation view thereof;
    FIG. 3 is a rear elevation view thereof;
    FIG. 4 is a left side elevation view thereof;
    FIG. 5 is a right side elevation view thereof;
    FIG. 6 is a top plan view thereof;
    FIG. 7 is a bottom plan view thereof; and,
    FIG. 8 is a bottom perspective view thereof.
    The evenly-dashed broken lines in the drawings illustrate portions of the wireless controller for internet of things, networks, and smart devices that form no part of the claimed design.

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