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1.发明授权公开(公告)号：US11575849B2
公开(公告)日：2023-02-07
申请号：US16689579
申请日：2019-11-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Keun Joo Park , Junseok Kim , Yohan Roh , Hyunsurk Ryu , Jooyeon Woo , Hyunku Lee
IPC: H04N5/3745 , H04N5/341 , H05B39/04 , G06F16/23 , G06F16/583 , H04N5/367 , H04N5/369 , H05B47/11 , H05B47/16 , H05B47/155
Abstract: An image processing device includes a vision sensor and a processor. The vision sensor generates a plurality of events in which an intensity of light changes and generates a plurality of timestamps depending on times when the events occur. In addition, the processor may regenerate a timestamp of a pixel where an abnormal event occurs, based on temporal correlation of the events.
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公开(公告)号：US20200260033A1
公开(公告)日：2020-08-13
申请号：US16584148
申请日：2019-09-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Donghee YEO , Junseok Kim , Heejae Jung , Hyunsurk Ryu
Abstract: A sensor includes a determining circuit and an output circuit. The determining circuit receives a first signal from a pixel in response to light and outputs a second signal associated with occurrence of an event, based on the first signal. Based on the second signal being received in a time period between a first time when a third signal is received from a processor and a second time when a condition is satisfied, the output circuit outputs a fourth signal associated with occurrence of the event in the time period to the processor after the second time.
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公开(公告)号：US12081889B2
公开(公告)日：2024-09-03
申请号：US18297233
申请日：2023-04-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yunjae Suh , Junseok Kim , Hyunsurk Ryu , Keun Joo Park , Masamichi Ito
Abstract: An image sensor includes a CIS (CMOS image sensor) pixel, a DVS (dynamic vision sensor) pixel, and an image signal processor. The CIS pixel includes a photoelectric conversion device generating charges corresponding to an incident light and a readout circuit generating an output voltage corresponding to the generated charges. The DVS pixel detects a change in an intensity of the incident light based on the generated charges to output an event signal and does not include a separate photoelectric conversion device. The image signal processor allows the photoelectric conversion device to be connected to the readout circuit or the DVS pixel.
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公开(公告)号：US11902673B2
公开(公告)日：2024-02-13
申请号：US17719647
申请日：2022-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minwon Seo , Jeongseok Kim , Hyunsurk Ryu , Yunjae Suh , Chang-Woo Shin , Woonhee Lee
CPC classification number: H04N23/76 , G06T5/003 , H04N23/45 , H04N23/71 , G06T2207/10152
Abstract: Disclosed is an electronic device which includes a dynamic vision sensor that includes a first pixel sensing a change in light intensity and generates an event signal based on the sensed change in light intensity, an illuminance estimator that estimates illuminance of a light, and a time delay compensator that calculates a time delay between a first time at which the change in light intensity occurs and a second time at which the first pixel senses the change in light intensity, based on the illuminance of the light, and to compensate for the time delay.
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公开(公告)号：US11270759B2
公开(公告)日：2022-03-08
申请号：US17006990
申请日：2020-08-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chanho Kim , Daeseok Byeon , Hyunsurk Ryu
IPC: G11C5/06 , G11C11/4094 , G11C16/08 , G11C11/4093 , G11C11/408 , G06N3/063 , G11C16/04
Abstract: A flash memory device includes: first pads; second pads; third pads; a memory cell region including first metal pads and a memory cell array; and a peripheral circuit region including a second metal pads and vertically connected to the memory cell region by the first metal pads and the second metal pads directly. The peripheral circuit region includes a row decoder block; a buffer block storing a command and an address received from an external semiconductor chip through the first pads; a page buffer block connected to the memory cell array through bit lines, connected to the third pads through data lines, and exchanging data signals with the external semiconductor chip through the data lines and the third pads; and a control logic block receiving control signals from the external semiconductor chip through the second pads, and controlling the row decoder block and the page buffer block.
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Patent Agency Ranking
公开(公告)号：US12100442B2
公开(公告)日：2024-09-24
申请号：US17682100
申请日：2022-02-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chanho Kim , Daeseok Byeon , Hyunsurk Ryu
IPC: G11C11/4093 , G06N3/063 , G11C5/06 , G11C11/408 , G11C11/4094 , G11C16/04 , G11C16/08
CPC classification number: G11C11/4093 , G06N3/063 , G11C5/06 , G11C11/4082 , G11C11/4085 , G11C11/4087 , G11C11/4094 , G11C16/0483 , G11C16/08
Abstract: Flash memory device includes: first pads to be bonded to external semiconductor chip, to receive at least one of command, address and control signals; second pads to be bonded to external semiconductor chip; memory cell array including memory cells; a row decoder block connected to memory cell array through word lines, to select one of word lines based on address provided to row decoder block; a buffer block to store command and address and provide address to row decoder block; a page buffer block connected to memory cell array through bit lines, connected to second pads through data lines without passing through buffer block, and configured to exchange data signals with external semiconductor chip through data lines and second pads; and a control logic block configured to receive command from buffer block, to receive control signals from external semiconductor chip, and to control row decoder block and page buffer block.
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公开(公告)号：US11637983B2
公开(公告)日：2023-04-25
申请号：US17492059
申请日：2021-10-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yunjae Suh , Junseok Kim , Hyunsurk Ryu , Keun Joo Park , Masamichi Ito
IPC: H04N5/378 , H04N5/3745
Abstract: An image sensor includes a CIS (CMOS image sensor) pixel, a DVS (dynamic vision sensor) pixel, and an image signal processor. The CIS pixel includes a photoelectric conversion device generating charges corresponding to an incident light and a readout circuit generating an output voltage corresponding to the generated charges. The DVS pixel detects a change in an intensity of the incident light based on the generated charges to output an event signal and does not include a separate photoelectric conversion device. The image signal processor allows the photoelectric conversion device to be connected to the readout circuit or the DVS pixel.
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公开(公告)号：US11558573B2
公开(公告)日：2023-01-17
申请号：US16584148
申请日：2019-09-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Donghee Yeo , Junseok Kim , Heejae Jung , Hyunsurk Ryu
Abstract: A sensor includes a determining circuit and an output circuit. The determining circuit receives a first signal from a pixel in response to light and outputs a second signal associated with occurrence of an event, based on the first signal. Based on the second signal being received in a time period between a first time when a third signal is received from a processor and a second time when a condition is satisfied, the output circuit outputs a fourth signal associated with occurrence of the event in the time period to the processor after the second time.
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公开(公告)号：US11264084B2
公开(公告)日：2022-03-01
申请号：US16871815
申请日：2020-05-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chanho Kim , Daeseok Byeon , Hyunsurk Ryu
IPC: G11C11/4093 , G11C16/08 , G11C16/04 , G11C11/4094 , G11C5/06 , G11C11/408
Abstract: A flash memory device includes: first pads; second pads; third pads; a memory cell array; a row decoder block; a buffer block that stores a command and an address received from an external semiconductor chip through the first pads and provides the address to the row decoder block; a page buffer block that is connected to the memory cell array through bit lines, is connected to the third pads through data lines, and exchanges data signals with the external semiconductor chip through the data lines and the third pads; and a control logic block that receives the command from the buffer block, receives control signals from the external semiconductor chip through the second pads, and controls the row decoder block and the page buffer block based on the received command and the received control signals.
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公开(公告)号：US20210118488A1
公开(公告)日：2021-04-22
申请号：US17006990
申请日：2020-08-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chanho Kim , Daeseok Byeon , Hyunsurk Ryu
IPC: G11C11/4093 , G11C11/408 , G11C11/4094 , G11C5/06 , G06N3/063
Abstract: A flash memory device includes: first pads; second pads; third pads; a memory cell region including first metal pads and a memory cell array; and a peripheral circuit region including a second metal pads and vertically connected to the memory cell region by the first metal pads and the second metal pads directly. The peripheral circuit region includes a row decoder block; a buffer block storing a command and an address received from an external semiconductor chip through the first pads; a page buffer block connected to the memory cell array through bit lines, connected to the third pads through data lines, and exchanging data signals with the external semiconductor chip through the data lines and the third pads; and a control logic block receiving control signals from the external semiconductor chip through the second pads, and controlling the row decoder block and the page buffer block.
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