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    CHARGE PUMP DEVICE AND IMAGE SENSOR INCLUDING THE SAME
    1.
    发明申请
    CHARGE PUMP DEVICE AND IMAGE SENSOR INCLUDING THE SAME 有权

    公开(公告)号：US20210013801A1

    公开(公告)日：2021-01-14

    申请号：US17032808

    申请日：2020-09-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Minwoong Seo ,  Dongmo Im

    IPC: H02M3/07 ,  H04N5/361

    Abstract: A charge pump device is configured to generate an output voltage from a square wave, where the charge pump device includes a semiconductor layer; first and second outer wells; a first inner well formed in the first outer well; a second inner well formed in the second outer well; a first capacitor, to which the input signal is applied, and connected to the first outer well; and a second capacitor connected to the first capacitor and second outer well, wherein the first voltage is applied to the first outer well, and a voltage that is lower than the first voltage is applied to the second outer well.

    Image sensor and method of manufacturing the same
    2.
    发明授权
    Image sensor and method of manufacturing the same 有权

    公开(公告)号：US10651226B2

    公开(公告)日：2020-05-12

    申请号：US15813843

    申请日：2017-11-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwang-Min Lee ,  Seokjin Kwon ,  Hyeyun Park ,  Beomsuk Lee ,  Dongmo Im

    IPC: H01L27/146 ,  H04N5/374

    Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

    Image sensor including a photodiode
    3.
    发明授权
    Image sensor including a photodiode 有权

    公开(公告)号：US12170298B2

    公开(公告)日：2024-12-17

    申请号：US17562125

    申请日：2021-12-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jameyung Kim ,  Sungin Kim ,  Dongmo Im

    IPC: H01L27/14 ,  H01L27/146

    Abstract: An image sensor includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a buried transfer gate electrode arranged in a transfer gate trench extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the buried transfer gate electrode has an upper surface arranged at a level lower than that of the first surface of the semiconductor substrate with respect to the second surface of the semiconductor substrate; and a transfer gate spacer arranged on an upper sidewall of the transfer gate trench and on the buried transfer gate electrode.

    Charge pump device and image sensor including the same
    5.
    发明授权
    Charge pump device and image sensor including the same 有权

    公开(公告)号：US10826389B1

    公开(公告)日：2020-11-03

    申请号：US16822207

    申请日：2020-03-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Minwoong Seo ,  Dongmo Im

    IPC: H02M3/07 ,  H04N5/361

    Abstract: A charge pump device is configured to generate an output voltage from a square wave, where the charge pump device includes a semiconductor layer; first and second outer wells; a first inner well formed in the first outer well; a second inner well formed in the second outer well; a first capacitor, to which the input signal is applied, and connected to the first outer well; and a second capacitor connected to the first capacitor and second outer well, wherein the first voltage is applied to the first outer well, and a voltage that is lower than the first voltage is applied to the second outer well.

    Image sensor
    6.
    发明授权
    Image sensor 有权

    公开(公告)号：US10361239B2

    公开(公告)日：2019-07-23

    申请号：US15696132

    申请日：2017-09-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwang-Min Lee ,  GwideokRyan Lee ,  Seokjin Kwon ,  Beomsuk Lee ,  Taeyon Lee ,  Dongmo Im

    IPC: H01L27/146 ,  H04N9/04 ,  H04N9/07

    Abstract: An image sensor having active, peripheral and dummy regions is provided as follows. A dummy through electrode is disposed in the substrate. An active through electrode is disposed in the substrate. An insulation structure in which a color filter is embedded is disposed on the substrate. A dummy bottom electrode is disposed on the insulation structure and connected electrically to the dummy through electrode. An active bottom electrode is disposed on the insulation structure and connected electrically to the active through electrode. A photoelectric conversion layer is disposed on the insulation structure. A top electrode is disposed on the photoelectric conversion layer and the dummy bottom electrode. The top electrode is connected electrically to the dummy bottom electrode. The photoelectric conversion layer is interposed between the top electrode and the active bottom electrode which are separated from each other.

    Image sensor
    8.
    发明授权
    Image sensor 有权

    公开(公告)号：US12272705B2

    公开(公告)日：2025-04-08

    申请号：US17239291

    申请日：2021-04-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kook Tae Kim ,  Chang Kyu Lee ,  Dongmo Im ,  Ju-eun Kim ,  Miseon Park ,  Jungim Choe ,  Soojin Hong

    IPC: H01L31/062 ,  H10F39/00

    Abstract: An image sensor is provided and may include a semiconductor substrate having a surface and including trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench; and a doped region in the semiconductor substrate and on the insulating patterns. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.

    Image sensor
    9.
    发明授权
    Image sensor 有权

    公开(公告)号：US11881496B2

    公开(公告)日：2024-01-23

    申请号：US17246064

    申请日：2021-04-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jameyung Kim ,  Tae-Hun Lee ,  Dongmo Im ,  Kwansik Cho

    IPC: H01L31/112 ,  H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14689

    Abstract: An image sensor includes a substrate, and a pixel separation pattern disposed in the substrate and interposed between a plurality of unit pixels. The plurality of unit pixels include a first unit pixel region and a second unit pixel region adjacent to the first unit pixel region in a first direction. The first unit pixel region and the second unit pixel region respectively include a first transfer gate and a second transfer gate. The pixel separation pattern includes a first pixel separation part interposed between the first unit pixel region and the second unit pixel region, and a second pixel separation part spaced apart from the first pixel separation part in the first direction. A top surface of the first pixel separation part is lower than a top surface of the second pixel separation part.

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