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公开(公告)号：US10910419B2
公开(公告)日：2021-02-02
申请号：US16418557
申请日：2019-05-21
发明人： Gwideok Ryan Lee , Taeyon Lee , Sangchun Park
IPC分类号： H01L27/146 , H01L31/032 , H04N5/374 , H01L29/786 , H01L29/417
摘要： An image sensor is provided and includes a semiconductor substrate having a first conductivity type, a photoelectric conversion region in the semiconductor substrate and having a second conductivity type, an oxide semiconductor pattern adjacent to a first surface of the semiconductor substrate, and a transfer gate on the first surface and adjacent to the photoelectric conversion region and the oxide semiconductor pattern.
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公开(公告)号：US10403673B2
公开(公告)日：2019-09-03
申请号：US15641423
申请日：2017-07-05
发明人： Gwi-Deok Ryan Lee , Taeyon Lee
IPC分类号： H01L27/146
摘要： An image sensor includes a transfer gate including a gate buried portion extending into a semiconductor substrate from a surface of the semiconductor substrate, a plurality of photoelectric conversion parts that are disposed in the semiconductor substrate on a side of the gate buried portion and vertically overlap each other, and a plurality of floating diffusion parts that are apart from and vertically overlap each other in the semiconductor substrate on other side of the gate buried portion, wherein at least one of the floating diffusion parts is positioned at a height of at least one of corresponding photoelectric conversion parts.
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公开(公告)号：US20230041006A1
公开(公告)日：2023-02-09
申请号：US17729260
申请日：2022-04-26
发明人： Seung Hyeon Jo , Taeyon Lee , Tae-Woo Lee
摘要： An image sensor pixel includes a substrate having a pixel electrode on a light receiving surface thereof, and a photoelectric conversion layer including a perovskite material, on the pixel electrode. A transparent electrode is provided on the photoelectric conversion layer, and a vertical electrode is provided, which is electrically connected to the pixel electrode and extends at least partially through the substrate. The photoelectric conversion layer includes a perovskite layer, a first blocking layer extending between the pixel electrode and the perovskite layer, and a second blocking layer extending between the transparent electrode and the perovskite layer. The perovskite material may have a material structure of ABX3, A2BX4, A3BX5, A4BX6, ABX4, or An−1BnX3n+1, where: n is a positive integer in a range from 2 to 6; A includes at least one material selected from a group consisting of Na, K, Rb, Cs and Fr; B includes at least one material selected from a divalent transition metal, a rare earth metal, an alkaline earth metal, Ga, In, Al, Sb, Bi, and Po; and X includes at least one material selected from Cl, Br, and I.
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公开(公告)号：US10134792B2
公开(公告)日：2018-11-20
申请号：US15499333
申请日：2017-04-27
发明人： Taeyon Lee , Gwideokryan Lee , Myungwon Lee
IPC分类号： H01L27/146
摘要： Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.
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公开(公告)号：US20180190708A1
公开(公告)日：2018-07-05
申请号：US15641423
申请日：2017-07-05
发明人： Gwi-Deok Ryan LEE , Taeyon Lee
IPC分类号： H01L27/146
CPC分类号： H01L27/14647 , H01L27/14627 , H01L27/14636 , H01L27/14689
摘要： An image sensor includes a transfer gate including a gate buried portion extending into a semiconductor substrate from a surface of the semiconductor substrate, a plurality of photoelectric conversion parts that are disposed in the semiconductor substrate on a side of the gate buried portion and vertically overlap each other, and a plurality of floating diffusion parts that are apart from and vertically overlap each other in the semiconductor substrate on other side of the gate buried portion, wherein at least one of the floating diffusion parts is positioned at a height of at least one of corresponding photoelectric conversion parts.
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公开(公告)号：US20140103193A1
公开(公告)日：2014-04-17
申请号：US14052168
申请日：2013-10-11
发明人： GwideokRyan Lee , SangChul Sul , Myungwon Lee , Min-ho Kim , Taechan Kim , Taeseok Oh , KwangHyun Lee , Taeyon Lee , Younggu Jin
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , B82Y20/00 , H01L27/1461 , H01L27/14612 , H01L27/14679
摘要： A binary image sensor includes a plurality of unit pixels on a substrate having a surface on which light is incident. At least one quantum dot is disposed on the surface of a substrate. A column sense amplifier circuit is configured to detect binary information of a selected unit pixel among the plurality of unit pixels from a voltage or a current detected from the selected unit pixel, and a processing unit is configured to process binary information of the respective unit pixels to generate pixel image information. Related devices and methods of operation are also discussed.
摘要翻译： 二值图像传感器包括在具有光入射的表面的基板上的多个单位像素。 至少一个量子点设置在基板的表面上。 列读出放大器电路被配置为从从所选择的单位像素检测的电压或电流中检测多个单位像素中的所选单位像素的二进制信息，并且处理单元被配置为处理各单位像素的二进制信息 以生成像素图像信息。 还讨论了相关设备和操作方法。
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公开(公告)号：US12074189B2
公开(公告)日：2024-08-27
申请号：US17947702
申请日：2022-09-19
发明人： Sangsu Park , Kwansik Kim , Sangchun Park , Beomsuk Lee , Taeyon Lee
IPC分类号： H01L27/146 , H01L31/032 , H04N25/13 , H04N25/616 , H04N25/617 , H10K30/65
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14625 , H01L27/1463 , H01L27/14638 , H01L27/14665 , H04N25/13 , H04N25/617 , H10K30/65 , H01L27/14621 , H01L27/1464 , H01L31/0323 , H04N25/616
摘要： An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.
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公开(公告)号：US11574948B2
公开(公告)日：2023-02-07
申请号：US16711301
申请日：2019-12-11
发明人： Changhwa Kim , Kwansik Kim , Dongchan Kim , Sang-Su Park , Beomsuk Lee , Taeyon Lee , Hajin Lim
IPC分类号： H01L27/146 , H01L51/44 , H01L29/786
摘要： An image sensor and a method of fabricating the image sensor, the image sensor including a semiconductor substrate having a first floating diffusion region, a molding pattern over the first floating diffusion region and including an opening, a first photoelectric conversion part at a surface of the semiconductor substrate, and a first transfer transistor connecting the first photoelectric conversion part to the first floating diffusion region. The first transfer transistor includes a channel pattern in the opening and a first transfer gate electrode. The channel pattern includes an oxide semiconductor. The channel pattern also includes a sidewall portion that covers a side surface of the opening, and a center portion that extends from the sidewall portion to a region over the first transfer gate electrode.
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9.发明授权公开(公告)号：US11569298B2
公开(公告)日：2023-01-31
申请号：US17034316
申请日：2020-09-28
发明人： Sangchun Park , Kwansik Kim , Hongki Kim , Sangsu Park , Beomsuk Lee , Taeyon Lee , Gwideok Ryan Lee
IPC分类号： H01L27/30 , H01L27/146 , H01L51/44
摘要： An image sensor includes a first substrate having a first surface and a second surface opposite to the first surface. The first substrate includes an active pixel region having a plurality of active pixels. A plurality of lower electrode structures is disposed on the second surface of the first substrate and corresponds to the plurality of active pixels. An upper electrode is disposed on the plurality of lower electrode structures. An organic photoelectric conversion layer is disposed between the plurality of lower electrode structures and the upper electrode. A second substrate is disposed on the first surface of the first substrate. A driving circuit configured to drive the plurality of active pixels is disposed on the second substrate. The plurality of lower electrode structures includes a first barrier layer, a reflective layer disposed on the first barrier layer and a second barrier layer disposed on the reflective layer.
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公开(公告)号：US10361239B2
公开(公告)日：2019-07-23
申请号：US15696132
申请日：2017-09-05
发明人： Kwang-Min Lee , GwideokRyan Lee , Seokjin Kwon , Beomsuk Lee , Taeyon Lee , Dongmo Im
IPC分类号： H01L27/146 , H04N9/04 , H04N9/07
摘要： An image sensor having active, peripheral and dummy regions is provided as follows. A dummy through electrode is disposed in the substrate. An active through electrode is disposed in the substrate. An insulation structure in which a color filter is embedded is disposed on the substrate. A dummy bottom electrode is disposed on the insulation structure and connected electrically to the dummy through electrode. An active bottom electrode is disposed on the insulation structure and connected electrically to the active through electrode. A photoelectric conversion layer is disposed on the insulation structure. A top electrode is disposed on the photoelectric conversion layer and the dummy bottom electrode. The top electrode is connected electrically to the dummy bottom electrode. The photoelectric conversion layer is interposed between the top electrode and the active bottom electrode which are separated from each other.
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