公开(公告)号：US11843020B2

公开(公告)日：2023-12-12

申请号：US17577615

申请日：2022-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  JungHun Kim ,  Sang-Su Park ,  Beomsuk Lee ,  Gang Zhang ,  Jaesung Hur

IPC: H01L27/146 ,  H01L27/148 ,  G02B5/20 ,  H01L25/16 ,  H04N25/00

CPC classification number: H01L27/14647 ,  G02B5/20 ,  H01L25/167 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14638 ,  H01L27/14645 ,  H01L27/14665 ,  H01L27/14689 ,  H01L27/14812 ,  H04N25/00 ,  H01L27/14612

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

公开(公告)号：US11450704B2

公开(公告)日：2022-09-20

申请号：US16878303

申请日：2020-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangsu Park ,  Kwansik Kim ,  Sangchun Park ,  Beomsuk Lee ,  Taeyon Lee

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/357 ,  H01L51/42 ,  H01L31/032

Abstract: An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.

公开(公告)号：US11315978B2

公开(公告)日：2022-04-26

申请号：US16857839

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Min Lee ,  Seokjin Kwon ,  Hyeyun Park ,  Beomsuk Lee ,  Dongmo Im

IPC: H01L27/146 ,  H04N5/374

Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

公开(公告)号：US11233087B2

公开(公告)日：2022-01-25

申请号：US16787408

申请日：2020-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  JungHun Kim ,  Sang-Su Park ,  Beomsuk Lee ,  Gang Zhang ,  Jaesung Hur

IPC: H01L27/146 ,  H04N5/335 ,  H01L27/148 ,  G02B5/20 ,  H01L25/16

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

公开(公告)号：US12199119B2

公开(公告)日：2025-01-14

申请号：US17668524

申请日：2022-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongchul Lee ,  Jinyoung Kim ,  Beomsuk Lee ,  Kwansik Cho ,  Hochul Ji

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface. The first surface includes an element isolation trench. An element isolation layer is arranged inside the element isolation trench. The element isolation layer defines an active region. A gate electrode is arranged on the first surface of the semiconductor substrate. An interlayer insulating layer is arranged on the first surface of the semiconductor substrate and covers the gate electrode. A ground contact is configured to penetrate the element isolation layer and the interlayer insulating layer and contacts the semiconductor substrate. A color filter is arranged on the second surface of the semiconductor substrate.

公开(公告)号：US12080744B2

公开(公告)日：2024-09-03

申请号：US17377792

申请日：2021-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Chul Lee ,  Beomsuk Lee ,  Minho Jang ,  Kwansik Cho

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor includes a first chip including a pixel region, a pad region, and an optical black region interposed between the pixel region and the pad region, and a second chip being in contact with a first surface of the first chip and including circuits for driving the first chip. The first chip includes a first substrate, a device isolation portion disposed in the first substrate and defining unit pixels, an interlayer insulating layer interposed between the first substrate and the second chip, a connection wiring structure disposed in the interlayer insulating layer, and a connection contact plug disposed in the interlayer insulating layer and connecting the connection wiring structure to the device isolation portion in the optical black region. The image sensor further includes a conductive pad disposed in the first chip or the second chip.

公开(公告)号：US10651226B2

公开(公告)日：2020-05-12

申请号：US15813843

申请日：2017-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Min Lee ,  Seokjin Kwon ,  Hyeyun Park ,  Beomsuk Lee ,  Dongmo Im

IPC: H01L27/146 ,  H04N5/374

Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

公开(公告)号：US20240136379A1

公开(公告)日：2024-04-25

申请号：US18204974

申请日：2023-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minkwan Kim ,  Inyong Park ,  Jinsun Pyo ,  Beomsuk Lee ,  Sungeun Lee ,  In Sung Joe

IPC: H01L27/146 ,  G02B3/00

CPC classification number: H01L27/14627 ,  G02B3/0043 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14685 ,  G02B1/14

Abstract: Image sensors and fabrication methods thereof. For example, the image sensor may include a first substrate having a first surface and a second surface that are opposite to each other, a plurality of pixels provided in the first substrate and arranged in pixel groups, each pixel group including four pixels arranged in two columns and two rows, a pixel separation structure in the first substrate and including a pixel group separation part that separates each pixel group from adjacent pixel groups and a pixel separation part that separates the pixels in each pixel group from each other, and a plurality of microlenses on the first surface and respectively overlapping the plurality of pixel groups. Each of the microlenses includes a central part that has a first curvature and an edge part that has a second curvature. The first curvature is less than the second curvature.

公开(公告)号：US20230197746A1

公开(公告)日：2023-06-22

申请号：US18066656

申请日：2022-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minkwan KIM ,  Hyunchul Kim ,  Junhong Kim ,  Kwangmin Lee ,  Beomsuk Lee ,  Insung Joe ,  Jinsun Pyo

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

Abstract: An image sensor includes a substrate having first and second surfaces opposing each other; photodiodes in the substrate; circuit and wiring structures below the first surface of the substrate; an insulating structure on the second surface of the substrate; a plurality of color filters on the insulating structure; and a grid structure on the insulating structure, wherein at least a portion of the grid structure is between adjacent color filters of, wherein the plurality of color filters include first and second color filters configured to selectively transmit light of different wavelength spectra associated with different colors, wherein the insulating structure includes a first and second regions having respective, different first and second thicknesses, and a boundary region between the first region and the second region that vertically overlaps the first color filter and is horizontally offset from a vertical central axis of the grid structure.

公开(公告)号：US10586824B2

公开(公告)日：2020-03-10

申请号：US16003339

申请日：2018-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  JungHun Kim ,  Sang-Su Park ,  Beomsuk Lee ,  Gang Zhang ,  Jaesung Hur

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/335 ,  H01L25/16 ,  G02B5/20

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.