公开(公告)号：US11233087B2

公开(公告)日：2022-01-25

申请号：US16787408

申请日：2020-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  JungHun Kim ,  Sang-Su Park ,  Beomsuk Lee ,  Gang Zhang ,  Jaesung Hur

IPC: H01L27/146 ,  H04N5/335 ,  H01L27/148 ,  G02B5/20 ,  H01L25/16

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

公开(公告)号：US20220310676A1

公开(公告)日：2022-09-29

申请号：US17739682

申请日：2022-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Miseon Park ,  Jaesung Hur

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first pixel isolation structure disposed in a first trench which vertically extends from the first surface of the semiconductor substrate and defines a plurality of pixel regions, and a second pixel isolation structure disposed in a second trench vertically extending from the second surface of the semiconductor substrate. The second pixel isolation structure overlaps the first pixel isolation structure. The first pixel isolation structure includes a liner semiconductor pattern defining a gap region in the first trench, the liner semiconductor pattern including sidewall portions and a bottom portion connecting the sidewall portions, a liner insulating pattern disposed between the liner semiconductor pattern and the semiconductor substrate, and a capping insulating pattern disposed in the gap region of the liner semiconductor pattern.

公开(公告)号：US11843020B2

公开(公告)日：2023-12-12

申请号：US17577615

申请日：2022-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  JungHun Kim ,  Sang-Su Park ,  Beomsuk Lee ,  Gang Zhang ,  Jaesung Hur

IPC: H01L27/146 ,  H01L27/148 ,  G02B5/20 ,  H01L25/16 ,  H04N25/00

CPC classification number: H01L27/14647 ,  G02B5/20 ,  H01L25/167 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14638 ,  H01L27/14645 ,  H01L27/14665 ,  H01L27/14689 ,  H01L27/14812 ,  H04N25/00 ,  H01L27/14612

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

公开(公告)号：US11024659B2

公开(公告)日：2021-06-01

申请号：US16555151

申请日：2019-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaesung Hur ,  Youngtak Kim ,  Hajin Lim

IPC: H01L27/146

Abstract: An image sensor and a method of fabricating an image sensor are provided, the image sensor including a plurality of color filters spaced apart from each other on a semiconductor substrate; a protective layer covering sidewalls of the color filters and top surfaces of the color filters; and a low-refractive pattern filling a space between the color filters.

公开(公告)号：US12237353B2

公开(公告)日：2025-02-25

申请号：US17667962

申请日：2022-02-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Miseon Park ,  Jaesung Hur

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first pixel isolation structure disposed in a first trench which vertically extends from the first surface of the semiconductor substrate and defines a plurality of pixel regions, and a second pixel isolation structure disposed in a second trench vertically extending from the second surface of the semiconductor substrate. The second pixel isolation structure overlaps the first pixel isolation structure. The first pixel isolation structure includes a liner semiconductor pattern defining a gap region in the first trench, the liner semiconductor pattern including sidewall portions and a bottom portion connecting the sidewall portions, a liner insulating pattern disposed between the liner semiconductor pattern and the semiconductor substrate, and a capping insulating pattern disposed in the gap region of the liner semiconductor pattern.

公开(公告)号：US11837618B1

公开(公告)日：2023-12-05

申请号：US16999926

申请日：2020-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaesung Hur ,  Taeksoo Jeon ,  Jongmin Baek ,  Sanghoon Ahn ,  Jangho Lee ,  Kyu-Hee Han

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14685 ,  H01L27/1463 ,  H01L27/14645

Abstract: An image sensor includes a semiconductor substrate having a plurality of pixel regions arranged in a first direction and a second direction that are parallel to an upper surface of the semiconductor substrate. The first direction is perpendicular to the second direction. A grid structure extends in the first direction and the second direction on the semiconductor substrate to define openings corresponding to a plurality of sub-pixel regions of the plurality of the pixel regions, respectively. Color filters are disposed in the openings of the grid structure, respectively. A protective layer covers sidewalls of the grid structure and bottom surfaces of the color filters. The protective layer includes silicon oxide including carbon (C) or nitrogen (N).

公开(公告)号：US10586824B2

公开(公告)日：2020-03-10

申请号：US16003339

申请日：2018-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  JungHun Kim ,  Sang-Su Park ,  Beomsuk Lee ,  Gang Zhang ,  Jaesung Hur

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/335 ,  H01L25/16 ,  G02B5/20

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.