Image sensor and method of manufacturing the same

    公开(公告)号:US10651226B2

    公开(公告)日:2020-05-12

    申请号:US15813843

    申请日:2017-11-15

    IPC分类号: H01L27/146 H04N5/374

    摘要: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

    Image sensor and method of manufacturing the same

    公开(公告)号:US11315978B2

    公开(公告)日:2022-04-26

    申请号:US16857839

    申请日:2020-04-24

    IPC分类号: H01L27/146 H04N5/374

    摘要: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

    Image sensor
    3.
    发明授权

    公开(公告)号:US11183526B2

    公开(公告)日:2021-11-23

    申请号:US16701750

    申请日:2019-12-03

    IPC分类号: H01L21/00 H01L27/146

    摘要: An image sensor including a semiconductor substrate having a first surface and a second surface, and a pixel region having a photoelectric conversion region; a first conductive pattern in a first trench defining the pixel region and extending from the first surface toward the second surface; a second conductive pattern in a second trench shallower than the first trench and defined between a plurality of active patterns on the first surface of the pixel region; a transfer transistor and a plurality of logic transistors on the active patterns; and a conductive line on the second surface and electrically connected to the first conductive pattern.

    Image sensor
    4.
    发明授权

    公开(公告)号:US10361239B2

    公开(公告)日:2019-07-23

    申请号:US15696132

    申请日:2017-09-05

    IPC分类号: H01L27/146 H04N9/04 H04N9/07

    摘要: An image sensor having active, peripheral and dummy regions is provided as follows. A dummy through electrode is disposed in the substrate. An active through electrode is disposed in the substrate. An insulation structure in which a color filter is embedded is disposed on the substrate. A dummy bottom electrode is disposed on the insulation structure and connected electrically to the dummy through electrode. An active bottom electrode is disposed on the insulation structure and connected electrically to the active through electrode. A photoelectric conversion layer is disposed on the insulation structure. A top electrode is disposed on the photoelectric conversion layer and the dummy bottom electrode. The top electrode is connected electrically to the dummy bottom electrode. The photoelectric conversion layer is interposed between the top electrode and the active bottom electrode which are separated from each other.