Image sensor and method of manufacturing the same

    公开(公告)号:US11315978B2

    公开(公告)日:2022-04-26

    申请号:US16857839

    申请日:2020-04-24

    IPC分类号: H01L27/146 H04N5/374

    摘要: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

    IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20210057478A1

    公开(公告)日:2021-02-25

    申请号:US16826455

    申请日:2020-03-23

    IPC分类号: H01L27/146

    摘要: An image sensor includes a substrate, first and second insulating structures, a first wiring structure, a through via, and first and second connection patterns. The substrate includes a sensor array region and a pad region. The first insulating structure is disposed on a second surface of the substrate. The first wiring structure is formed in the first insulating structure and includes first conductive layers and first vias. The through via passes through the substrate in the pad region and connects to the first wiring structure. The first connection pattern is connected to the first wiring structure. The second insulating structure is disposed on a fourth surface of the first insulating structure. The second connection pattern is connected to the first connection pattern. The first conductive layers include a first wiring, and a second wiring spaced farther from the substrate than the first wiring. The through via contacts the second wiring.

    Image sensor and method of manufacturing the same

    公开(公告)号:US10651226B2

    公开(公告)日:2020-05-12

    申请号:US15813843

    申请日:2017-11-15

    IPC分类号: H01L27/146 H04N5/374

    摘要: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

    Image sensor and method of fabricating the same

    公开(公告)号:US11417699B2

    公开(公告)日:2022-08-16

    申请号:US16826455

    申请日:2020-03-23

    IPC分类号: H01L27/146

    摘要: An image sensor includes a substrate, first and second insulating structures, a first wiring structure, a through via, and first and second connection patterns. The substrate includes a sensor array region and a pad region. The first insulating structure is disposed on a second surface of the substrate. The first wiring structure is formed in the first insulating structure and includes first conductive layers and first vias. The through via passes through the substrate in the pad region and connects to the first wiring structure. The first connection pattern is connected to the first wiring structure. The second insulating structure is disposed on a fourth surface of the first insulating structure. The second connection pattern is connected to the first connection pattern. The first conductive layers include a first wiring, and a second wiring spaced farther from the substrate than the first wiring. The through via contacts the second wiring.

    Image sensor
    5.
    发明授权

    公开(公告)号:US10361239B2

    公开(公告)日:2019-07-23

    申请号:US15696132

    申请日:2017-09-05

    IPC分类号: H01L27/146 H04N9/04 H04N9/07

    摘要: An image sensor having active, peripheral and dummy regions is provided as follows. A dummy through electrode is disposed in the substrate. An active through electrode is disposed in the substrate. An insulation structure in which a color filter is embedded is disposed on the substrate. A dummy bottom electrode is disposed on the insulation structure and connected electrically to the dummy through electrode. An active bottom electrode is disposed on the insulation structure and connected electrically to the active through electrode. A photoelectric conversion layer is disposed on the insulation structure. A top electrode is disposed on the photoelectric conversion layer and the dummy bottom electrode. The top electrode is connected electrically to the dummy bottom electrode. The photoelectric conversion layer is interposed between the top electrode and the active bottom electrode which are separated from each other.

    Image sensor having an interconnection layer connecting to stacked transparent electrodes and covering a black pixel region

    公开(公告)号:US10797092B2

    公开(公告)日:2020-10-06

    申请号:US16428940

    申请日:2019-05-31

    摘要: An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.

    Image sensor having an interconnection covering a black pixel region surrounding an active pixel region

    公开(公告)号:US10347672B2

    公开(公告)日:2019-07-09

    申请号:US15653537

    申请日:2017-07-19

    摘要: An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.