公开(公告)号：US11837612B2

公开(公告)日：2023-12-05

申请号：US17239093

申请日：2021-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Jun Choi ,  In Gyu Baek ,  Bom I Sim ,  Jin Yong Choi

IPC: H01L27/146 ,  H01L49/02

CPC classification number: H01L27/14603 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14683 ,  H01L28/91

Abstract: An image sensor includes: a substrate including a first surface and a second surface on which light is incident, the second surface being opposite to the first surface; a photoelectric converter provided in the substrate; a first metal layer provided on the first surface of the substrate; a second metal layer provided on the first metal layer; and a capacitor layer provided between the first metal layer and the second metal layer, wherein the capacitor layer includes: a first lower electrode electrically connected to the first metal layer, a first upper electrode electrically connected to the second metal layer, a second upper electrode spaced apart from the first upper electrode and electrically connected to the second metal layer, a first capacitor provided between the first lower electrode and the first upper electrode, and a second capacitor provided between the first lower electrode and the second upper electrode.

公开(公告)号：US11417699B2

公开(公告)日：2022-08-16

申请号：US16826455

申请日：2020-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Min Lee ,  Doo Won Kwon ,  Seok Jin Kwon ,  Kyoung Won Na ,  In Gyu Baek

IPC: H01L27/146

Abstract: An image sensor includes a substrate, first and second insulating structures, a first wiring structure, a through via, and first and second connection patterns. The substrate includes a sensor array region and a pad region. The first insulating structure is disposed on a second surface of the substrate. The first wiring structure is formed in the first insulating structure and includes first conductive layers and first vias. The through via passes through the substrate in the pad region and connects to the first wiring structure. The first connection pattern is connected to the first wiring structure. The second insulating structure is disposed on a fourth surface of the first insulating structure. The second connection pattern is connected to the first connection pattern. The first conductive layers include a first wiring, and a second wiring spaced farther from the substrate than the first wiring. The through via contacts the second wiring.

公开(公告)号：US20210043673A1

公开(公告)日：2021-02-11

申请号：US16837299

申请日：2020-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doo Won Kwon ,  In Gyu Baek

IPC: H01L27/146 ,  H01L23/00

Abstract: An image sensor includes a first substrate structure, which includes a first substrate having a photoelectric converter and a first wiring structure therein. The first wiring structure includes upper connection wiring, which is electrically connected to the photoelectric converter, a first upper bonding pad and a second upper bonding pad. A second substrate structure is provided, which includes a second substrate and a second wiring structure bonded to the first wiring structure. The second wiring structure includes: lower connection wiring, which is electrically connected to the upper connection wiring, a first lower bonding pad, which is directly connected to the first upper bonding pad, and a second lower bonding pad, which is directly connected to the second upper bonding pad. A width of the first upper bonding pad is unequal to a width of the second upper bonding pad, and a thickness of the first upper bonding pad is unequal to a thickness of the second upper bonding pad.

公开(公告)号：US10522581B2

公开(公告)日：2019-12-31

申请号：US15470152

申请日：2017-03-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gwi-Deok Ryan Lee ,  Myung Won Lee ,  Tae Yon Lee ,  In Gyu Baek

IPC: H01L27/146 ,  H01L27/30 ,  H04N5/378 ,  H04N9/04

Abstract: An image sensor includes a semiconductor substrate providing a plurality of pixel regions, a semiconductor photoelectric device disposed in each of the plurality of pixel regions, an organic photoelectric device disposed above the semiconductor photoelectric device, and a pixel circuit disposed below the semiconductor photoelectric device. The pixel circuit includes a plurality of driving transistors configured to generate a pixel voltage signal from an electric charge generated in the semiconductor photoelectric device and the organic photoelectric device. A driving gate electrode of at least one of the plurality of driving transistors has a region embedded in the semiconductor substrate.

公开(公告)号：US11626438B2

公开(公告)日：2023-04-11

申请号：US17384865

申请日：2021-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Sung Moon ,  In Gyu Baek ,  Seung Han Yoo ,  Hae Min Lim ,  Min Jung Chung ,  Jin Yong Choi

IPC: H01L27/146 ,  H01L27/142 ,  H04N5/341

Abstract: Image sensors are provided. The image sensor may include a substrate including a first surface and a second surface opposite the first surface, a photoelectric conversion layer in the substrate, and a lower capacitor connection pattern on the first surface of the substrate. The second surface of the substrate may be configured to receive incident light. The lower capacitor connection pattern may include a capacitor region and a landing region protruding from the capacitor region. The image sensors may also include a capacitor structure including a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the capacitor region, a first wire on the capacitor structure and connected to the second conductive pattern, and a second wire connected to the landing region. The first conductive pattern may be connected to the lower capacitor connection pattern. A surface of the first wire facing the substrate and a surface of the second wire facing the substrate may be coplanar.

公开(公告)号：US11107850B2

公开(公告)日：2021-08-31

申请号：US16413190

申请日：2019-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Sung Moon ,  In Gyu Baek ,  Seung Han Yoo ,  Hae Min Lim ,  Min Jung Chung ,  Jin Yong Choi

IPC: H01L27/146 ,  H01L27/142 ,  H04N5/341

Abstract: Image sensors are provided. The image sensor may include a substrate including a first surface and a second surface opposite the first surface, a photoelectric conversion layer in the substrate, and a lower capacitor connection pattern on the first surface of the substrate. The second surface of the substrate may be configured to receive incident light. The lower capacitor connection pattern may include a capacitor region and a landing region protruding from the capacitor region. The image sensors may also include a capacitor structure including a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the capacitor region, a first wire on the capacitor structure and connected to the second conductive pattern, and a second wire connected to the landing region. The first conductive pattern may be connected to the lower capacitor connection pattern. A surface of the first wire facing the substrate and a surface of the second wire facing the substrate may be coplanar.

公开(公告)号：US20230395639A1

公开(公告)日：2023-12-07

申请号：US18450730

申请日：2023-08-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doo Won Kwon ,  In Gyu Baek

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14636 ,  H01L24/05 ,  H01L27/14605

Abstract: An image sensor includes a first substrate structure, which includes a first substrate having a photoelectric converter and a first wiring structure therein. The first wiring structure includes upper connection wiring, which is electrically connected to the photoelectric converter, a first upper bonding pad and a second upper bonding pad. A second substrate structure is provided, which includes a second substrate and a second wiring structure bonded to the first wiring structure. The second wiring structure includes: lower connection wiring, which is electrically connected to the upper connection wiring, a first lower bonding pad, which is directly connected to the first upper bonding pad, and a second lower bonding pad, which is directly connected to the second upper bonding pad. A width of the first upper bonding pad is unequal to a width of the second upper bonding pad, and a thickness of the first upper bonding pad is unequal to a thickness of the second upper bonding pad.

公开(公告)号：US11482564B2

公开(公告)日：2022-10-25

申请号：US16941958

申请日：2020-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Yoon ,  Doo Won Kwon ,  Kwan Sik Kim ,  In Gyu Baek ,  Tae Young Song

IPC: H01L27/32 ,  H01L27/146 ,  H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L31/18 ,  H01L23/00

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.

公开(公告)号：US11088193B2

公开(公告)日：2021-08-10

申请号：US16661346

申请日：2019-10-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gwi-Deok Ryan Lee ,  Myung Won Lee ,  Tae Yon Lee ,  In Gyu Baek

IPC: H01L27/146 ,  H01L27/30 ,  H04N5/378 ,  H04N9/04

Abstract: An image sensor includes a semiconductor substrate providing a plurality of pixel regions, a semiconductor photoelectric device disposed in each of the plurality of pixel regions, an organic photoelectric device disposed above the semiconductor photoelectric device, and a pixel circuit disposed below the semiconductor photoelectric device. The pixel circuit includes a plurality of driving transistors configured to generate a pixel voltage signal from an electric charge generated in the semiconductor photoelectric device and the organic photoelectric device. A driving gate electrode of at least one of the plurality of driving transistors has a region embedded in the semiconductor substrate.

公开(公告)号：US20210057478A1

公开(公告)日：2021-02-25

申请号：US16826455

申请日：2020-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Min Lee ,  Doo Won Kwon ,  Seok Jin Kwon ,  Kyoung Won Na ,  In Gyu Baek

IPC: H01L27/146

Abstract: An image sensor includes a substrate, first and second insulating structures, a first wiring structure, a through via, and first and second connection patterns. The substrate includes a sensor array region and a pad region. The first insulating structure is disposed on a second surface of the substrate. The first wiring structure is formed in the first insulating structure and includes first conductive layers and first vias. The through via passes through the substrate in the pad region and connects to the first wiring structure. The first connection pattern is connected to the first wiring structure. The second insulating structure is disposed on a fourth surface of the first insulating structure. The second connection pattern is connected to the first connection pattern. The first conductive layers include a first wiring, and a second wiring spaced farther from the substrate than the first wiring. The through via contacts the second wiring.