公开(公告)号：US11626438B2

公开(公告)日：2023-04-11

申请号：US17384865

申请日：2021-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Sung Moon ,  In Gyu Baek ,  Seung Han Yoo ,  Hae Min Lim ,  Min Jung Chung ,  Jin Yong Choi

IPC: H01L27/146 ,  H01L27/142 ,  H04N5/341

Abstract: Image sensors are provided. The image sensor may include a substrate including a first surface and a second surface opposite the first surface, a photoelectric conversion layer in the substrate, and a lower capacitor connection pattern on the first surface of the substrate. The second surface of the substrate may be configured to receive incident light. The lower capacitor connection pattern may include a capacitor region and a landing region protruding from the capacitor region. The image sensors may also include a capacitor structure including a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the capacitor region, a first wire on the capacitor structure and connected to the second conductive pattern, and a second wire connected to the landing region. The first conductive pattern may be connected to the lower capacitor connection pattern. A surface of the first wire facing the substrate and a surface of the second wire facing the substrate may be coplanar.

公开(公告)号：US11107850B2

公开(公告)日：2021-08-31

申请号：US16413190

申请日：2019-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Sung Moon ,  In Gyu Baek ,  Seung Han Yoo ,  Hae Min Lim ,  Min Jung Chung ,  Jin Yong Choi

IPC: H01L27/146 ,  H01L27/142 ,  H04N5/341

Abstract: Image sensors are provided. The image sensor may include a substrate including a first surface and a second surface opposite the first surface, a photoelectric conversion layer in the substrate, and a lower capacitor connection pattern on the first surface of the substrate. The second surface of the substrate may be configured to receive incident light. The lower capacitor connection pattern may include a capacitor region and a landing region protruding from the capacitor region. The image sensors may also include a capacitor structure including a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the capacitor region, a first wire on the capacitor structure and connected to the second conductive pattern, and a second wire connected to the landing region. The first conductive pattern may be connected to the lower capacitor connection pattern. A surface of the first wire facing the substrate and a surface of the second wire facing the substrate may be coplanar.

公开(公告)号：US11837612B2

公开(公告)日：2023-12-05

申请号：US17239093

申请日：2021-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Jun Choi ,  In Gyu Baek ,  Bom I Sim ,  Jin Yong Choi

IPC: H01L27/146 ,  H01L49/02

CPC classification number: H01L27/14603 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14683 ,  H01L28/91

Abstract: An image sensor includes: a substrate including a first surface and a second surface on which light is incident, the second surface being opposite to the first surface; a photoelectric converter provided in the substrate; a first metal layer provided on the first surface of the substrate; a second metal layer provided on the first metal layer; and a capacitor layer provided between the first metal layer and the second metal layer, wherein the capacitor layer includes: a first lower electrode electrically connected to the first metal layer, a first upper electrode electrically connected to the second metal layer, a second upper electrode spaced apart from the first upper electrode and electrically connected to the second metal layer, a first capacitor provided between the first lower electrode and the first upper electrode, and a second capacitor provided between the first lower electrode and the second upper electrode.