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公开(公告)号：US11101327B2
公开(公告)日：2021-08-24
申请号：US16829265
申请日：2020-03-25
发明人： Dong-Mo Im , Gwi-Deok Lee , Tae-Yon Lee , Masaru Ishii
IPC分类号： H01L27/30 , H01L27/146 , H04N5/374
摘要： An image sensor includes a color filter on a substrate, first and second organic photodiodes on the color filter, and first and second capacitors connected to the first and second organic photodiodes, respectively. The color filter is spaced apart from a first surface of the substrate. Each of the first and second organic photodiodes face an upper surface of the color filter. The first capacitor includes a first conductive pattern and a first insulating space. The first conductive pattern extends through the substrate, and the first insulating spacer surrounds a sidewall of the first conductive pattern and has a first thickness. The second capacitor includes a second conductive pattern and a second insulating spacer. The second conductive pattern extends through the substrate, and the second insulating spacer surrounds a sidewall of the second conductive pattern and has a second thickness smaller than the first thickness.
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公开(公告)号：US10557925B2
公开(公告)日：2020-02-11
申请号：US15340972
申请日：2016-11-01
摘要： The Time-of-Flight (TOF) technique is combined with analog amplitude modulation within each pixel in an image sensor. The pixel may be a two-tap pixel or a one-tap pixel. Two photoelectron receiver circuits in the pixel receive respective analog modulating signals. The distribution of the received photoelectron charge between these two circuits is controlled by the difference (or ratio) of the two analog modulating voltages. The differential signals generated in this manner within the pixel are modulated in time domain for TOF measurement. Thus, the TOF information is added to the received light signal by the analog domain-based single-ended to differential converter inside the pixel itself. The TOF-based measurement of range and its resolution are controllable by changing the duration of modulation. An autonomous navigation system with these features may provide improved vision for drivers under difficult driving conditions like low light, fog, bad weather, or strong ambient light.
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3.发明授权Methods of operating depth pixel included in three-dimensional image sensor and methods of operating three-dimensional image sensor 有权操作三维图像传感器中深度像素的操作方法和操作三维图像传感器的方法公开(公告)号：US09258502B2
公开(公告)日：2016-02-09
申请号：US14105258
申请日：2013-12-13
发明人： Tae-Yon Lee
IPC分类号： H04N5/3745 , H04N5/369 , G01S17/89 , G01S7/486
CPC分类号： H04N5/37452 , G01S7/4863 , G01S7/4865 , G01S17/89 , H04N5/3696
摘要： In a method of operating a depth pixel included in a three-dimensional (3D) image sensor, a plurality of sampling values are obtained by sampling a reception light reflected by an object based on a transfer control signal having a first initial activation level. The depth pixel includes a photo detection region, a transfer gate and a floating diffusion region. The transfer control signal is applied to the transfer gate. A first final activation level of the transfer control signal is determined based on the plurality of sampling values and at least one reference value. A distance between the depth pixel and the object is calculated based on the reception light and the transfer control signal having the first final activation level.
摘要翻译： 在操作三维（3D）图像传感器中包括的深度像素的方法中，通过基于具有第一初始激活电平的传输控制信号对由对象反射的接收光进行采样来获得多个采样值。 深度像素包括光检测区域，传输门极和浮动扩散区域。 转移控制信号被施加到传送门。 基于多个采样值和至少一个参考值来确定传送控制信号的第一最终激活电平。 基于接收光和具有第一最终激活电平的传输控制信号来计算深度像素和对象之间的距离。
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公开(公告)号：US20160037098A1
公开(公告)日：2016-02-04
申请号：US14732129
申请日：2015-06-05
发明人： Tae-Yon Lee , Masaru Ishii
CPC分类号： H01L27/307
摘要： The inventive concepts relate to image sensors. The image sensor includes a substrate including a floating diffusion region and a pixel circuit, an interlayer insulating layer on the substrate, a contact node and a first electrode on the interlayer insulating layer, a dielectric layer on a top surface of the first electrode, a channel semiconductor pattern on the dielectric layer and connected to the contact node, and a photoelectric conversion layer on the channel semiconductor pattern. The channel semiconductor pattern includes a semiconductor material having an electron mobility that is higher than an electron mobility of the photoelectric conversion layer.
摘要翻译： 本发明的概念涉及图像传感器。 图像传感器包括：衬底，包括浮动扩散区域和像素电路;衬底上的层间绝缘层;接触节点;层间绝缘层上的第一电极;第一电极顶表面上的电介质层; 电介质层上并连接到接触节点的沟道半导体图案，以及沟道半导体图案上的光电转换层。 沟道半导体图案包括具有高于光电转换层的电子迁移率的电子迁移率的半导体材料。
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5.发明授权Depth pixel of three-dimensional image sensor and three-dimensional image sensor including the same 有权三维图像传感器的深度像素和包括其的三维图像传感器公开(公告)号：US09232163B2
公开(公告)日：2016-01-05
申请号：US14140824
申请日：2013-12-26
IPC分类号： H04N5/341 , H04N5/3745 , G01S17/89 , G01S7/491
CPC分类号： H04N5/3745 , G01S7/4914 , G01S17/89
摘要： A depth pixel includes a photo detection unit, an ambient light removal current source, a driving transistor and a select transistor. The photo detection unit is configured to generate a light current based on a received light reflected from a subject, the received light including an ambient light component. The ambient light removal current source configured to generate a compensation current indicating the ambient light component in response to a power supply and at least one compensation control signal. The driving transistor is configured to amplify an effective voltage corresponding to the light current and the compensation current. The select transistor configured to output the amplified effective voltage in response to a selection signal, the amplified effective voltage indicating a depth of the subject.
摘要翻译： 深度像素包括光检测单元，环境光去除电流源，驱动晶体管和选择晶体管。 光检测单元被配置为基于从被摄体反射的接收光产生光电流，所接收的光包括环境光分量。 环境光去除电流源被配置为响应于电源产生指示环境光分量的补偿电流和至少一个补偿控制信号。 驱动晶体管被配置为放大对应于光电流和补偿电流的有效电压。 所述选择晶体管被配置为响应于选择信号输出放大的有效电压，所述放大的有效电压指示所述对象的深度。
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公开(公告)号：US10797092B2
公开(公告)日：2020-10-06
申请号：US16428940
申请日：2019-05-31
发明人： Gwi-Deok Ryan Lee , Kwang-Min Lee , Beom-Suk Lee , Tae-Yon Lee
IPC分类号： H01L27/146 , H01L27/28 , H01L27/30
摘要： An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.
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公开(公告)号：US10347672B2
公开(公告)日：2019-07-09
申请号：US15653537
申请日：2017-07-19
发明人： Gwi-Deok Ryan Lee , Kwang-Min Lee , Beom-Suk Lee , Tae-Yon Lee
IPC分类号： H01L27/28 , H01L27/146 , H01L27/30
摘要： An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.
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8.发明授权Binary CMOS image sensors, methods of operating same, and image processing systems including same 有权二进制CMOS图像传感器，操作方法以及包括其的图像处理系统公开(公告)号：US09177987B2
公开(公告)日：2015-11-03
申请号：US14051179
申请日：2013-10-10
发明人： Tae-Yon Lee , Ju Hwan Jung , Seok Yong Hong , Tae-Chan Kim , Dong Ki Min , Yoon Dong Park , Sang-Chul Sul , Tae-Seok Oh , Je Il Ryu , Kwang-Hyun Lee , Young-Gu Jin
IPC分类号： H01L27/00 , H01L27/146 , H04N5/376
CPC分类号： H01L27/14643 , H01L27/14612 , H01L27/1464 , H04N5/3765
摘要： A binary complementary metal-oxide-semiconductor (CMOS) image sensor includes a pixel array and a readout circuit. The pixel array includes at least one pixel having a plurality of sub-pixels. The readout circuit is configured to quantize a pixel signal output from the pixel using a reference signal. The pixel signal corresponds to sub-pixel signals output from sub-pixels, from among the plurality of sub-pixels, activated in response to incident light.
摘要翻译： 二元互补金属氧化物半导体（CMOS）图像传感器包括像素阵列和读出电路。 像素阵列包括具有多个子像素的至少一个像素。 读出电路被配置为使用参考信号量化从像素输出的像素信号。 像素信号对应于从子像素输出的子像素信号，从响应于入射光激活的多个子像素之中。
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公开(公告)号：US11284028B2
公开(公告)日：2022-03-22
申请号：US16950122
申请日：2020-11-17
发明人： Tae-Yon Lee , Gwi-Deok Ryan Lee , Masaru Ishii , Dong-Mo Im
摘要： An image sensor includes a first sensor pixel and a second sensor pixel that vertically overlap each other. The first sensor pixel includes a first signal generation circuit, and a first photoelectric converter that is connected to the first signal generation circuit and configured to generate first information from light having a first wavelength. The second sensor pixel includes a second signal generation circuit, and a second photoelectric converter that is connected to the second signal generation circuit and configured to generate second information from light having a second wavelength. A first horizontal surface area of the first photoelectric converter is different from a second horizontal surface area of the second photoelectric converter. An image sensor module includes the image sensor, a light source configured to emit light to a target object, and a dual band pass filter configured to selectively pass light reflected from the target object.
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公开(公告)号：US09761636B2
公开(公告)日：2017-09-12
申请号：US14732129
申请日：2015-06-05
发明人： Tae-Yon Lee , Masaru Ishii
CPC分类号： H01L27/307
摘要： The inventive concepts relate to image sensors. The image sensor includes a substrate including a floating diffusion region and a pixel circuit, an interlayer insulating layer on the substrate, a contact node and a first electrode on the interlayer insulating layer, a dielectric layer on a top surface of the first electrode, a channel semiconductor pattern on the dielectric layer and connected to the contact node, and a photoelectric conversion layer on the channel semiconductor pattern. The channel semiconductor pattern includes a semiconductor material having an electron mobility that is higher than an electron mobility of the photoelectric conversion layer.
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