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    Image sensor
    2.
    发明授权
    Image sensor 有权

    公开(公告)号：US11264414B2

    公开(公告)日：2022-03-01

    申请号：US16458229

    申请日：2019-07-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Masaru Ishii ,  Tae-hyoung Kim ,  Min-ho Jang ,  In-sung Joe

    IPC: H01L27/146

    Abstract: An image sensor includes a semiconductor substrate having opposite first and second surfaces, a wiring structure on the first surface of the semiconductor substrate, and a refractive structure on the second surface of the semiconductor substrate. The refractive structure includes a first anti-reflective layer on the second surface of the semiconductor substrate, a refractive pattern on the first anti-reflective layer, an insulation layer on the first anti-reflective layer, and a second anti-reflective layer on the refractive pattern and the insulation layer. The refractive pattern includes first refractive parts spaced apart from each other in a first direction parallel to the second surface of the semiconductor substrate, and the insulation layer fills spaces between the first refractive parts.

    Image sensors
    3.
    发明授权
    Image sensors 有权

    公开(公告)号：US10468460B2

    公开(公告)日：2019-11-05

    申请号：US15787846

    申请日：2017-10-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Masaru Ishii ,  GwideokRyan Lee ,  Taeyon Lee

    IPC: H01L27/146 ,  H01L27/30 ,  H04N5/374 ,  H04N5/378 ,  H04N5/359 ,  H04N5/3745

    Abstract: An image sensor includes a photoelectric conversion element and a charge storage node coupled to the photoelectric conversion element. The charge storage node may store photocharges generated in the photoelectric conversion element. The charge storage node may include a floating diffusion region in a semiconductor substrate, a barrier dopant region on the floating diffusion region in the semiconductor substrate, and a charge drain region on the barrier dopant region in the semiconductor substrate, where the semiconductor substrate is associated with a first conductivity type, the floating diffusion region is associated with a second conductivity type, the barrier dopant region is associated with the first conductivity type, and the charge drain region is associated with the second conductivity type.

    Image sensor
    6.
    发明授权
    Image sensor 有权

    公开(公告)号：US11101327B2

    公开(公告)日：2021-08-24

    申请号：US16829265

    申请日：2020-03-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong-Mo Im ,  Gwi-Deok Lee ,  Tae-Yon Lee ,  Masaru Ishii

    IPC: H01L27/30 ,  H01L27/146 ,  H04N5/374

    Abstract: An image sensor includes a color filter on a substrate, first and second organic photodiodes on the color filter, and first and second capacitors connected to the first and second organic photodiodes, respectively. The color filter is spaced apart from a first surface of the substrate. Each of the first and second organic photodiodes face an upper surface of the color filter. The first capacitor includes a first conductive pattern and a first insulating space. The first conductive pattern extends through the substrate, and the first insulating spacer surrounds a sidewall of the first conductive pattern and has a first thickness. The second capacitor includes a second conductive pattern and a second insulating spacer. The second conductive pattern extends through the substrate, and the second insulating spacer surrounds a sidewall of the second conductive pattern and has a second thickness smaller than the first thickness.

    IMAGE SENSORS WITH MULTIPLE FUNCTIONS AND IMAGE SENSOR MODULES INCLUDING THE SAME
    7.
    发明申请
    IMAGE SENSORS WITH MULTIPLE FUNCTIONS AND IMAGE SENSOR MODULES INCLUDING THE SAME 审中-公开

    公开(公告)号：US20190260952A1

    公开(公告)日：2019-08-22

    申请号：US16239662

    申请日：2019-01-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： TAE-YON LEE ,  Gwi-Deok Ryan Lee ,  Masaru Ishii ,  Dong-Mo Im

    IPC: H04N5/369 ,  H01L27/30 ,  H01L27/28 ,  H01L27/146 ,  G06K9/00 ,  G06K9/20

    Abstract: An image sensor includes a first sensor pixel and a second sensor pixel that vertically overlap each other. The first sensor pixel includes a first signal generation circuit, and a first photoelectric converter that is connected to the first signal generation circuit and configured to generate first information from light having a first wavelength. The second sensor pixel includes a second signal generation circuit, and a second photoelectric converter that is connected to the second signal generation circuit and configured to generate second information from light having a second wavelength. A first horizontal surface area of the first photoelectric converter is different from a second horizontal surface area of the second photoelectric converter. An image sensor module includes the image sensor, a light source configured to emit light to a target object, and a dual band pass filter configured to selectively pass light reflected from the target object.

    CMOS image sensor
    8.
    发明授权
    CMOS image sensor 有权
    CMOS图像传感器

    公开(公告)号：US09293489B2

    公开(公告)日：2016-03-22

    申请号：US14315730

    申请日：2014-06-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Myungwon Lee ,  Sangchul Sul ,  Hirosige Goto ,  Sae-Young Kim ,  Kang-Su Lee ,  Gwideokryan Lee ,  Masaru Ishii

    IPC: H01L27/146

    CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

    Abstract: An image sensor includes a semiconductor substrate, a storage node region in the semiconductor substrate, an insulating portion on the semiconductor substrate, a via contact extending through the insulating portion, a photo-electric converter in the semiconductor substrate and spaced apart from the storage node region, an organic photo-electric layer on the insulating portion, and a buffer interposed between and electrically connecting the via contact and the storage node region.

    Abstract translation: 图像传感器包括半导体衬底，半导体衬底中的存储节点区域，半导体衬底上的绝缘部分，延伸穿过绝缘部分的通孔接触，半导体衬底中的光电转换器，并与存储节点间隔开 区域，绝缘部分上的有机光电层，以及插入在电触点和存储节点区域之间并将其电连接的缓冲器。

    Image sensor, method for manufacturing the same, and image processing device having the image sensor
    9.
    发明授权
    Image sensor, method for manufacturing the same, and image processing device having the image sensor 有权
    图像传感器，其制造方法以及具有图像传感器的图像处理装置

    公开(公告)号：US09287327B2

    公开(公告)日：2016-03-15

    申请号：US14310305

    申请日：2014-06-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Myung Won Lee ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deok Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

    IPC: H04N5/225 ,  H01L27/30 ,  H04N9/04

    CPC classification number: H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

    Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

    Abstract translation: 一种图像传感器，包括：第一层，其具有形成在半导体衬底中的多组光电二极管，每个组表示2×2的光电二极管阵列，其中2个第一像素被配置为检测第一波长的光和2秒的像素， 检测第二波长的光，每个第一像素定位成与第二像素相邻; 以及与所述第一层重叠的第二层，所述第二层是有机的，具有被配置为检测第三波长的光的多个有机光电二极管，每个有机光电二极管定位成部分地重叠第一层的2个第一光电二极管和2个第二光电二极管。

    Image Sensors Including Semiconductor Channel Patterns
    10.
    发明申请
    Image Sensors Including Semiconductor Channel Patterns 有权
    图像传感器包括半导体通道模式

    公开(公告)号：US20160037098A1

    公开(公告)日：2016-02-04

    申请号：US14732129

    申请日：2015-06-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Tae-Yon Lee ,  Masaru Ishii

    IPC: H04N5/361 ,  H01L27/30 ,  H04N5/363

    CPC classification number: H01L27/307

    Abstract: The inventive concepts relate to image sensors. The image sensor includes a substrate including a floating diffusion region and a pixel circuit, an interlayer insulating layer on the substrate, a contact node and a first electrode on the interlayer insulating layer, a dielectric layer on a top surface of the first electrode, a channel semiconductor pattern on the dielectric layer and connected to the contact node, and a photoelectric conversion layer on the channel semiconductor pattern. The channel semiconductor pattern includes a semiconductor material having an electron mobility that is higher than an electron mobility of the photoelectric conversion layer.

    Abstract translation: 本发明的概念涉及图像传感器。 图像传感器包括：衬底，包括浮动扩散区域和像素电路;衬底上的层间绝缘层;接触节点;层间绝缘层上的第一电极;第一电极顶表面上的电介质层; 电介质层上并连接到接触节点的沟道半导体图案，以及沟道半导体图案上的光电转换层。 沟道半导体图案包括具有高于光电转换层的电子迁移率的电子迁移率的半导体材料。

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