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    BINARY IMAGE SENSORS AND UNIT PIXELS THEREOF
    1.
    发明申请
    BINARY IMAGE SENSORS AND UNIT PIXELS THEREOF 有权
    二进制图像传感器及其像素

    公开(公告)号：US20140103193A1

    公开(公告)日：2014-04-17

    申请号：US14052168

    申请日：2013-10-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： GwideokRyan Lee ,  SangChul Sul ,  Myungwon Lee ,  Min-ho Kim ,  Taechan Kim ,  Taeseok Oh ,  KwangHyun Lee ,  Taeyon Lee ,  Younggu Jin

    IPC: H01L27/146

    CPC classification number: H01L27/14609 ,  B82Y20/00 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14679

    Abstract: A binary image sensor includes a plurality of unit pixels on a substrate having a surface on which light is incident. At least one quantum dot is disposed on the surface of a substrate. A column sense amplifier circuit is configured to detect binary information of a selected unit pixel among the plurality of unit pixels from a voltage or a current detected from the selected unit pixel, and a processing unit is configured to process binary information of the respective unit pixels to generate pixel image information. Related devices and methods of operation are also discussed.

    Abstract translation: 二值图像传感器包括在具有光入射的表面的基板上的多个单位像素。 至少一个量子点设置在基板的表面上。 列读出放大器电路被配置为从从所选择的单位像素检测的电压或电流中检测多个单位像素中的所选单位像素的二进制信息，并且处理单元被配置为处理各单位像素的二进制信息 以生成像素图像信息。 还讨论了相关设备和操作方法。

    Image sensor
    2.
    发明授权
    Image sensor 有权

    公开(公告)号：US10361239B2

    公开(公告)日：2019-07-23

    申请号：US15696132

    申请日：2017-09-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwang-Min Lee ,  GwideokRyan Lee ,  Seokjin Kwon ,  Beomsuk Lee ,  Taeyon Lee ,  Dongmo Im

    IPC: H01L27/146 ,  H04N9/04 ,  H04N9/07

    Abstract: An image sensor having active, peripheral and dummy regions is provided as follows. A dummy through electrode is disposed in the substrate. An active through electrode is disposed in the substrate. An insulation structure in which a color filter is embedded is disposed on the substrate. A dummy bottom electrode is disposed on the insulation structure and connected electrically to the dummy through electrode. An active bottom electrode is disposed on the insulation structure and connected electrically to the active through electrode. A photoelectric conversion layer is disposed on the insulation structure. A top electrode is disposed on the photoelectric conversion layer and the dummy bottom electrode. The top electrode is connected electrically to the dummy bottom electrode. The photoelectric conversion layer is interposed between the top electrode and the active bottom electrode which are separated from each other.

    Image sensors
    3.
    发明授权
    Image sensors 有权

    公开(公告)号：US10468460B2

    公开(公告)日：2019-11-05

    申请号：US15787846

    申请日：2017-10-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Masaru Ishii ,  GwideokRyan Lee ,  Taeyon Lee

    IPC: H01L27/146 ,  H01L27/30 ,  H04N5/374 ,  H04N5/378 ,  H04N5/359 ,  H04N5/3745

    Abstract: An image sensor includes a photoelectric conversion element and a charge storage node coupled to the photoelectric conversion element. The charge storage node may store photocharges generated in the photoelectric conversion element. The charge storage node may include a floating diffusion region in a semiconductor substrate, a barrier dopant region on the floating diffusion region in the semiconductor substrate, and a charge drain region on the barrier dopant region in the semiconductor substrate, where the semiconductor substrate is associated with a first conductivity type, the floating diffusion region is associated with a second conductivity type, the barrier dopant region is associated with the first conductivity type, and the charge drain region is associated with the second conductivity type.

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