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    Image sensors, image detecting systems including the image sensors, and methods of operating the image sensors
    1.
    发明授权
    Image sensors, image detecting systems including the image sensors, and methods of operating the image sensors 有权

    公开(公告)号：US11082652B2

    公开(公告)日：2021-08-03

    申请号：US16225642

    申请日：2018-12-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Younggu Jin ,  Youngchan Kim ,  Min-Sun Keel

    IPC: H04N5/3745 ,  H04N5/369 ,  H04N5/374 ,  H04N5/378 ,  H04N5/359 ,  G01S7/4863

    Abstract: Image sensors and methods of operating the image sensors are provided. The image sensors may include a pixel configured to generate an image signal in response to light incident on the pixel. The pixel may include a charge collection circuit configured to collect charges, which are produced by the light incident on the pixel, during a sensing period and a floating diffusion region. The image sensor may further include a storage unit configured to store the charges and, during a transfer period after the sensing period, configured to transfer at least a portion of the charges to the floating diffusion region. An amount of charges that is transferred from the storage unit to the floating diffusion region may be controlled by a voltage level of a storage control signal that is applied to a storage control terminal of the storage unit.

    BINARY IMAGE SENSORS AND UNIT PIXELS THEREOF
    2.
    发明申请
    BINARY IMAGE SENSORS AND UNIT PIXELS THEREOF 有权
    二进制图像传感器及其像素

    公开(公告)号：US20140103193A1

    公开(公告)日：2014-04-17

    申请号：US14052168

    申请日：2013-10-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： GwideokRyan Lee ,  SangChul Sul ,  Myungwon Lee ,  Min-ho Kim ,  Taechan Kim ,  Taeseok Oh ,  KwangHyun Lee ,  Taeyon Lee ,  Younggu Jin

    IPC: H01L27/146

    CPC classification number: H01L27/14609 ,  B82Y20/00 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14679

    Abstract: A binary image sensor includes a plurality of unit pixels on a substrate having a surface on which light is incident. At least one quantum dot is disposed on the surface of a substrate. A column sense amplifier circuit is configured to detect binary information of a selected unit pixel among the plurality of unit pixels from a voltage or a current detected from the selected unit pixel, and a processing unit is configured to process binary information of the respective unit pixels to generate pixel image information. Related devices and methods of operation are also discussed.

    Abstract translation: 二值图像传感器包括在具有光入射的表面的基板上的多个单位像素。 至少一个量子点设置在基板的表面上。 列读出放大器电路被配置为从从所选择的单位像素检测的电压或电流中检测多个单位像素中的所选单位像素的二进制信息，并且处理单元被配置为处理各单位像素的二进制信息 以生成像素图像信息。 还讨论了相关设备和操作方法。

    DEPTH PIXEL HAVING MULTI-TAP STRUCTURE AND TIME-OF-FLIGHT SENSOR INCLUDING THE SAME
    3.
    发明申请
    DEPTH PIXEL HAVING MULTI-TAP STRUCTURE AND TIME-OF-FLIGHT SENSOR INCLUDING THE SAME 有权

    公开(公告)号：US20220021831A1

    公开(公告)日：2022-01-20

    申请号：US17173290

    申请日：2021-02-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Younggu Jin ,  Youngchan Kim ,  Youngsun Oh

    IPC: H04N5/369 ,  H04N5/341 ,  G01S17/894 ,  G01S7/4863 ,  G01S7/4865

    Abstract: A depth pixel of a time-of-flight (ToF) sensor includes a common photogate disposed in a center region of the depth pixel, a plurality of floating diffusion regions disposed in a peripheral region surrounding the center region, a plurality of demodulation transfer gates disposed in the peripheral region, and a plurality of overflow gates disposed in the peripheral region. The demodulation transfer gates transfer a photo charge collected by the common photogate to the plurality of floating diffusion regions. The demodulation transfer gates are symmetric with respect to each of a horizontal line and a vertical line that pass through a center of the depth pixel and are substantially perpendicular to each other. The overflow gates drain the photo charge collected by the common photogate, and are symmetric with respect to each of the horizontal line and the vertical line.

    Image sensor including particular readout circuit arrangement
    4.
    发明授权
    Image sensor including particular readout circuit arrangement 有权

    公开(公告)号：US11088185B2

    公开(公告)日：2021-08-10

    申请号：US16592840

    申请日：2019-10-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Younggu Jin ,  Youngchan Kim ,  Yonghun Kwon ,  Moosup Lim ,  Taesub Jung

    IPC: H04N5/374 ,  H01L27/146 ,  H04N5/378 ,  H04N5/3745 ,  H04N5/225 ,  G06T7/50

    Abstract: An image sensor includes a polarizer array and a depth pixel array. The polarizer array may include first to fourth unit pixels, which are arranged in a first direction and a second direction crossing each other, and may include polarization gratings respectively provided in the first to fourth unit pixels. The polarization gratings of the first to fourth unit pixels may have polarization directions different from each other. The depth pixel array may include depth pixels corresponding to the first to fourth unit pixels, respectively. Each of the depth pixels may include a photoelectric conversion device and first and second readout circuits, which are connected in common to the photoelectric conversion device.

    Depth pixel having multiple photodiodes and time-of-flight sensor including the same
    5.
    发明授权
    Depth pixel having multiple photodiodes and time-of-flight sensor including the same 有权

    公开(公告)号：US12249614B2

    公开(公告)日：2025-03-11

    申请号：US17375148

    申请日：2021-07-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Younggu Jin

    IPC: H01L27/146 ,  H01L27/148 ,  H04N25/705

    Abstract: A depth pixel includes a first photodiode, a second photodiode and a common microlens. First and second taps are disposed at both sides of the first photodiode in a first horizontal direction to sample a photo charge stored in the first photodiode. The second photodiode is disposed at a side of the first photodiode in a second horizontal direction perpendicular to the first horizontal direction. Third and fourth taps are disposed at both sides of the second photodiode in the first horizontal direction to sample a photo charge stored in the second photodiode. The common microlens is disposed above or below the semiconductor substrate. The common microlens covers both of the first photodiode and the second photodiode to focus an incident light to the first photodiode and the second photodiode.

    Depth pixel having multi-tap structure and time-of-flight sensor including the same
    7.
    发明授权
    Depth pixel having multi-tap structure and time-of-flight sensor including the same 有权

    公开(公告)号：US11627266B2

    公开(公告)日：2023-04-11

    申请号：US17173290

    申请日：2021-02-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Younggu Jin ,  Youngchan Kim ,  Youngsun Oh

    IPC: H04N5/369 ,  H04N5/341 ,  G01S7/4865 ,  G01S7/4863 ,  G01S17/894

    Abstract: A depth pixel of a time-of-flight (ToF) sensor includes a common photogate disposed in a center region of the depth pixel, a plurality of floating diffusion regions disposed in a peripheral region surrounding the center region, a plurality of demodulation transfer gates disposed in the peripheral region, and a plurality of overflow gates disposed in the peripheral region. The demodulation transfer gates transfer a photo charge collected by the common photogate to the plurality of floating diffusion regions. The demodulation transfer gates are symmetric with respect to each of a horizontal line and a vertical line that pass through a center of the depth pixel and are substantially perpendicular to each other. The overflow gates drain the photo charge collected by the common photogate, and are symmetric with respect to each of the horizontal line and the vertical line.

    Image sensor having a gate electrode on a semiconductor pattern side wall
    10.
    发明授权
    Image sensor having a gate electrode on a semiconductor pattern side wall 有权

    公开(公告)号：US12166049B2

    公开(公告)日：2024-12-10

    申请号：US17655582

    申请日：2022-03-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Younggu Jin ,  Eunsub Shim ,  Jungchak Ahn

    IPC: H01L27/146 ,  H04N25/704

    Abstract: An image sensor is provided. The image sensor includes a semiconductor substrate including a first surface and a second surface opposite to each other. A semiconductor pattern is disposed on the first surface of the semiconductor substrate and it extends in a first direction perpendicular to the first surface. A buried transmission gate electrode is disposed in a transmission gate trench extending from the first surface of the semiconductor substrate to an interior of the semiconductor substrate. A first gate electrode at least partially surrounds a side wall of the semiconductor pattern and has a ring-shaped horizontal cross-section. A color filter is disposed on the second surface of the semiconductor substrate.

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