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    IMAGE SENSORS HAVING GRATING STRUCTURES THEREIN THAT PROVIDE ENHANCED DIFFRACTION OF INCIDENT LIGHT
    1.
    发明申请
    IMAGE SENSORS HAVING GRATING STRUCTURES THEREIN THAT PROVIDE ENHANCED DIFFRACTION OF INCIDENT LIGHT 审中-公开

    公开(公告)号：US20200075656A1

    公开(公告)日：2020-03-05

    申请号：US16286897

    申请日：2019-02-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Wook Lee ,  Euiyoung Song ,  Kwanghee Lee ,  Uihui Kwon ,  Jae Ho Kim ,  Jungchak Ahn

    IPC: H01L27/146 ,  G02B5/18

    Abstract: An image sensor may include a semiconductor substrate having a light receiving surface thereon and a plurality of spaced-apart semiconductor photoelectric conversion regions at adjacent locations therein. A grating structure is provided on the light receiving surface. This grating structure extends opposite each of the plurality of spaced-apart photoelectric conversion regions. An optically-transparent layer is provided on the grating structure. This grating structure includes a plurality of spaced-apart grating patterns, which can have the same height and the same width. In addition, the grating patterns may be spaced apart from each other by a uniform distance. The grating structure is configured to selectively produce ±1 or higher order diffraction lights to the photoelectric conversion regions, in response to light incident thereon.

    IMAGE SENSORS INCLUDNG WELL REGIONS OF DIFFERENT CONCENTRATIONS AND METHODS OF FABRICATING THE SAME
    5.
    发明申请
    IMAGE SENSORS INCLUDNG WELL REGIONS OF DIFFERENT CONCENTRATIONS AND METHODS OF FABRICATING THE SAME 审中-公开
    图像传感器包括不同浓度的良好区域及其制造方法

    公开(公告)号：US20150333100A1

    公开(公告)日：2015-11-19

    申请号：US14807992

    申请日：2015-07-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jungchak Ahn ,  Yitae Kim

    IPC: H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1463

    Abstract: An image sensor includes a high concentration well region in contact with a device isolation layer extending along a periphery of a photoelectric converting part, which can improve dark current properties of the image sensor. The image sensor also includes a low concentration well region in contact with a sidewall of the device isolation layer overlapped with a transfer gate, which can improve image lag properties of the image sensor. Related fabrication methods are also discussed.

    Abstract translation: 图像传感器包括与沿着光电转换部分的周边延伸的器件隔离层接触的高浓度阱区域，其可以改善图像传感器的暗电流特性。 图像传感器还包括与传输栅极重叠的器件隔离层的侧壁接触的低浓度阱区域，其可以改善图像传感器的图像滞后特性。 还讨论了相关的制造方法。

    Image sensor
    6.
    发明授权
    Image sensor 有权
    图像传感器

    公开(公告)号：US08946794B2

    公开(公告)日：2015-02-03

    申请号：US13767039

    申请日：2013-02-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jungchak Ahn

    IPC: H01L31/062 ,  H01L31/02 ,  H01L27/146

    CPC classification number: H01L31/02 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14689

    Abstract: An image sensor includes a first device isolation layer separating a plurality of pixels from one another, and a second device isolation layer disposed along inner side surfaces of parts of the first device isolation layer that extend around the pixels. The second device isolation layer delimits an active region of the semiconductor substrate. Each pixel includes a photoelectric converter, a floating diffusion region, a ground region, and a gate of a transfer transistor. The gate extends into the active region of the semiconductor substrate. The ground region is electrically connected to a ground voltage terminal.

    Abstract translation: 图像传感器包括将多个像素彼此分开的第一器件隔离层和沿着围绕像素延伸的第一器件隔离层的部分的内侧表面设置的第二器件隔离层。 第二器件隔离层界定半导体衬底的有源区。 每个像素包括光电转换器，浮动扩散区域，接地区域和转移晶体管的栅极。 栅极延伸到半导体衬底的有源区。 接地区域电连接到接地电压端子。

    Image sensor device
    7.
    发明授权
    Image sensor device 有权

    公开(公告)号：US12176362B2

    公开(公告)日：2024-12-24

    申请号：US17856022

    申请日：2022-07-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min-Woong Seo ,  Jungchak Ahn ,  Jae-Kyu Lee

    IPC: H01L27/146 ,  H04N25/59 ,  H04N25/60 ,  H04N25/772 ,  H10B12/00

    Abstract: An image sensor device includes a digital pixel that includes a photo detector, a comparator, and a memory circuit, a pixel driver that controls the digital pixel, and a digital logic circuit that performs a digital signal processing operation on a digital signal output from the digital pixel. The photo detector and a first portion of the comparator are formed in a first semiconductor die, a second portion of the comparator, the memory circuit, and the pixel driver are formed in a second semiconductor die under the first semiconductor die, and the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.

    Image sensor chip
    9.
    发明授权
    Image sensor chip 有权

    公开(公告)号：US11776982B2

    公开(公告)日：2023-10-03

    申请号：US17134699

    申请日：2020-12-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Minho Jang ,  Doowon Kwon ,  Dongchan Kim ,  Bokwon Kim ,  Kyungrae Byun ,  Jungchak Ahn ,  Hyunyoung Yeo

    IPC: H01L27/146 ,  H01L25/065

    CPC classification number: H01L27/14636 ,  H01L25/0657 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L2225/06541

    Abstract: An image sensor chip includes a lower chip, an upper chip stacked on the lower chip and including a photoelectric element, a via hole penetrating through the upper chip and penetrating through at least a portion of the lower chip, and a conductive connection layer electrically connecting the lower chip and the upper chip to each other in the via hole. The upper chip includes an upper substrate, an upper isolation layer and an upper element on the upper substrate, a connection contact plug, and a multilayer interconnection line electrically connected to the connection contact plug. A distance between an upper surface of the connection contact plug and an upper surface of the upper isolation layer is greater than a distance between an upper surface of an upper gate electrode of the upper element and an upper surface of the upper isolation layer.

    Image sensors
    10.
    发明授权
    Image sensors 有权

    公开(公告)号：US11302733B2

    公开(公告)日：2022-04-12

    申请号：US16132075

    申请日：2018-09-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Min Jang ,  Jungchak Ahn ,  Junsung Park ,  Younggu Jin

    IPC: H01L31/0232 ,  H01L27/146

    Abstract: An image sensor includes a device isolation layer disposed in a substrate and defining pixel regions, and a grid pattern on a surface of the substrate. The grid pattern overlaps the device isolation layer between adjacent pixel regions in a direction perpendicular to the surface. The grid pattern has a width less than a width of the device isolation layer.

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