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    HIGHLY INTEGRATED IMAGE SENSORS USING INTER-SUBSTRATE WIRING STRUCTURES
    1.
    发明公开
    HIGHLY INTEGRATED IMAGE SENSORS USING INTER-SUBSTRATE WIRING STRUCTURES 审中-公开

    公开(公告)号：US20240014243A1

    公开(公告)日：2024-01-11

    申请号：US18295966

    申请日：2023-04-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Minho Jang ,  Doowon Kwon ,  Kyungtae Lim ,  Donghyun Kim

    IPC: H01L27/146

    CPC classification number: H01L27/14634 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1469

    Abstract: An image sensor includes a first substrate having a first transistor integrated therein, and a first plurality of wiring structures on the first substrate. The first plurality of wiring structures include a first wiring structure electrically connected to the first transistor. A second substrate extends on the first plurality of wiring structures, and has a second transistor integrated therein, which is electrically connected to a second wiring structure within the first plurality of wiring structures. A second plurality of wiring structures extend on the second substrate. A third substrate is provided on the second plurality of wiring structures. A microlens extends on a light receiving surface of the third substrate. A light sensing element extends within the third substrate. A transfer gate (TG) extends into a portion of the third substrate, extends adjacent the light sensing element, and is electrically connected to a first wiring structure within the second plurality of wiring structures. A floating diffusion (FD) region extends within the third substrate and adjacent the TG. The FD region is electrically connected to a second wiring structure within the second plurality of wiring structures.

    Image sensor chip
    2.
    发明授权
    Image sensor chip 有权

    公开(公告)号：US11776982B2

    公开(公告)日：2023-10-03

    申请号：US17134699

    申请日：2020-12-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Minho Jang ,  Doowon Kwon ,  Dongchan Kim ,  Bokwon Kim ,  Kyungrae Byun ,  Jungchak Ahn ,  Hyunyoung Yeo

    IPC: H01L27/146 ,  H01L25/065

    CPC classification number: H01L27/14636 ,  H01L25/0657 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L2225/06541

    Abstract: An image sensor chip includes a lower chip, an upper chip stacked on the lower chip and including a photoelectric element, a via hole penetrating through the upper chip and penetrating through at least a portion of the lower chip, and a conductive connection layer electrically connecting the lower chip and the upper chip to each other in the via hole. The upper chip includes an upper substrate, an upper isolation layer and an upper element on the upper substrate, a connection contact plug, and a multilayer interconnection line electrically connected to the connection contact plug. A distance between an upper surface of the connection contact plug and an upper surface of the upper isolation layer is greater than a distance between an upper surface of an upper gate electrode of the upper element and an upper surface of the upper isolation layer.

    IMAGE SENSOR
    3.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20230081238A1

    公开(公告)日：2023-03-16

    申请号：US17901335

    申请日：2022-09-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Minho Jang ,  Seungkuk Kang

    IPC: H01L27/146 ,  H01L23/00

    Abstract: An image sensor includes a stack structure including an active pixel region in which a plurality of pixels are defined, and a pad region arranged on at least one side of the active pixel region. The stack structure includes a first substrate including a photoelectric conversion region and a floating diffusion region in each pixel, a first semiconductor substrate, a first front structure on the first semiconductor substrate, and a pad opening penetrating the first semiconductor substrate in the pad region, a second substrate attached to the first substrate and including a pixel gate electrically connected to the floating diffusion region in each pixel, a third substrate attached to the second substrate and including a logic transistor for driving the plurality of pixels, and a pad having a top surface that is exposed through the pad opening.

    Image sensors including phase detection pixel
    4.
    发明授权
    Image sensors including phase detection pixel 有权

    公开(公告)号：US11412165B2

    公开(公告)日：2022-08-09

    申请号：US16986759

    申请日：2020-08-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hongki Kim ,  Minkyung Kim ,  Minkwan Kim ,  Minho Jang ,  Insung Joe

    IPC: H04N5/369 ,  H04N9/04 ,  H01L27/146

    Abstract: An image sensor is presented which includes a pixel array including a plurality of image sensing pixels in a substrate, a phase detection shared pixel in the substrate, the phase detection shared pixel including two phase detection subpixels arranged next to each other, a color filter fence disposed on the plurality of image sensing pixels, and the phase detection shared pixel, the color filter fence defining a plurality of color filter spaces, a plurality of color filter layers respectively disposed in the plurality of color filter spaces on the plurality of image sensing pixels, and the phase detection shared pixel, a first micro-lens disposed on each of the plurality of image sensing pixels to have a first height, and a second micro-lens disposed to vertically overlap the two phase detection subpixels of the phase detection shared pixel and to have a second height greater than the first height.

    IMAGE SENSORS INCLUDING PHASE DETECTION PIXEL
    6.
    发明申请
    IMAGE SENSORS INCLUDING PHASE DETECTION PIXEL 有权

    公开(公告)号：US20220353446A1

    公开(公告)日：2022-11-03

    申请号：US17812795

    申请日：2022-07-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hongki Kim ,  Minkyung Kim ,  Minkwan Kim ,  Minho Jang ,  Insung Joe

    IPC: H04N5/369 ,  H04N9/04 ,  H01L27/146

    Abstract: An image sensor is presented which includes a pixel array including a plurality of image sensing pixels in a substrate, a phase detection shared pixel in the substrate, the phase detection shared pixel including two phase detection subpixels arranged next to each other, a color filter fence disposed on the plurality of image sensing pixels, and the phase detection shared pixel, the color filter fence defining a plurality of color filter spaces, a plurality of color filter layers respectively disposed in the plurality of color filter spaces on the plurality of image sensing pixels, and the phase detection shared pixel, a first micro-lens disposed on each of the plurality of image sensing pixels to have a first height, and a second micro-lens disposed to vertically overlap the two phase detection subpixels of the phase detection shared pixel and to have a second height greater than the first height.

    Image sensor wherein the transfer gate contacts a first refractive layer that is coplanar with a second refractive layer
    7.
    发明授权
    Image sensor wherein the transfer gate contacts a first refractive layer that is coplanar with a second refractive layer 有权

    公开(公告)号：US12272709B2

    公开(公告)日：2025-04-08

    申请号：US17655576

    申请日：2022-03-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Minho Jang ,  Jeongsoon Kang ,  Donghyun Kim ,  Seungkuk Kang ,  Insung Joe

    IPC: H01L27/146

    Abstract: An image sensor includes a first structure, a second structure, and a third structure that are sequentially stacked in a vertical direction. The first structure includes a first substrate and at least one first transistor disposed on the first substrate. The second structure includes a second substrate and at least one second transistor disposed on the second substrate. The third structure includes a third substrate that includes an upper surface on which light is incident and a lower surface that is opposite to the upper surface, a photoelectric conversion region disposed in the third substrate, a transfer gate disposed on the lower surface of the third substrate, and a reflective structure disposed on the lower surface of the third substrate and on a lower surface and side surface of the transfer gate.

    Image sensor
    9.
    发明授权
    Image sensor 有权

    公开(公告)号：US12080744B2

    公开(公告)日：2024-09-03

    申请号：US17377792

    申请日：2021-07-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong-Chul Lee ,  Beomsuk Lee ,  Minho Jang ,  Kwansik Cho

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/1464

    Abstract: An image sensor includes a first chip including a pixel region, a pad region, and an optical black region interposed between the pixel region and the pad region, and a second chip being in contact with a first surface of the first chip and including circuits for driving the first chip. The first chip includes a first substrate, a device isolation portion disposed in the first substrate and defining unit pixels, an interlayer insulating layer interposed between the first substrate and the second chip, a connection wiring structure disposed in the interlayer insulating layer, and a connection contact plug disposed in the interlayer insulating layer and connecting the connection wiring structure to the device isolation portion in the optical black region. The image sensor further includes a conductive pad disposed in the first chip or the second chip.

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