公开(公告)号：US11935908B2

公开(公告)日：2024-03-19

申请号：US17327885

申请日：2021-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mihye Jang ,  Seungjoo Nah ,  Minho Jang ,  Heegeun Jeong

IPC: H01L27/146 ,  H01L21/768 ,  H01L23/00 ,  H10K39/32

CPC classification number: H01L27/14636 ,  H01L21/76898 ,  H01L24/83 ,  H01L27/14634 ,  H01L27/1469 ,  H10K39/32 ,  H01L24/06 ,  H01L24/32 ,  H01L2224/06155 ,  H01L2224/32145 ,  H01L2224/83931 ,  H01L2224/83951

Abstract: An image sensor includes a first structure including a first substrate, and a first internal wiring structure on the first substrate. The first substrate includes an active pixel region and a through electrode region around the active pixel region. The first internal wiring structure includes a plurality of first internal wiring patterns. The image sensor further includes a second structure including a second substrate and a second internal wiring structure on the second substrate. The second substrate is arranged on the first substrate. The image sensor additionally includes a through electrode layer arranged in the through electrode region to at least partially fill a through electrode trench, which penetrates the first substrate, and to connect the first internal wiring structure to the second internal wiring structure.