Image sensor and method of manufacturing the same

    公开(公告)号:US11315978B2

    公开(公告)日:2022-04-26

    申请号:US16857839

    申请日:2020-04-24

    Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

    Image sensor and method of manufacturing the same

    公开(公告)号:US10651226B2

    公开(公告)日:2020-05-12

    申请号:US15813843

    申请日:2017-11-15

    Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

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