公开(公告)号：US11699763B2

公开(公告)日：2023-07-11

申请号：US17701930

申请日：2022-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-hun Lee ,  Dong-won Kim

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  G11C11/419 ,  H01L27/146 ,  H01L21/02 ,  H01L29/10 ,  H01L29/66 ,  H10B10/00 ,  H01L29/78 ,  H10B43/20

CPC classification number: H01L29/78696 ,  G11C11/419 ,  H01L21/02603 ,  H01L21/02606 ,  H01L27/14616 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/1025 ,  H01L29/42392 ,  H01L29/66795 ,  H10B10/12 ,  H01L29/1037 ,  H01L29/66787 ,  H01L29/785 ,  H10B43/20

Abstract: A semiconductor device includes a first PMOS transistor, a first NMOS transistor, and a second NMOS transistor connected to an output node of the first PMOS and NMOS transistors. The first PMOS transistor includes first nanowires, first source and drain regions on opposite sides of each first nanowire, and a first gate completely surrounding each first nanowire. The first NMOS transistor includes second nanowires, second source and drain regions on opposite sides of each second nanowire, and a second gate extending from the first gate and completely surrounding each second nanowire. The second NMOS transistor includes third nanowires, third source and drain regions on opposite sides of each third nanowire, and a third gate, separated from the first and second gates, and completely surrounding each third nanowire. A number of third nanowires is greater than that of first nanowires. The first and second gates share respective first and second nanowires.

公开(公告)号：US10374099B2

公开(公告)日：2019-08-06

申请号：US15911148

申请日：2018-03-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-hun Lee ,  Dong-won Kim

IPC: H01L29/786 ,  H01L27/11 ,  H01L29/06 ,  H01L29/423 ,  G11C11/419 ,  H01L27/146 ,  H01L29/66 ,  H01L29/78 ,  H01L27/11578 ,  H01L29/10

Abstract: A static random access memory (SRAM) device includes a circuit element that includes a first inverter having a first load transistor and a first drive transistor and a second inverter having a second load transistor and a second drive transistor. Input and output nodes of the first inverter and the second inverter are cross-connected to each other. A first transfer transistor is connected to the output node of the first inverter, and a second transfer transistor is connected to the output nodes of the second inverter. Each of the first and second load transistors, the first and second drive transistors, and the first and second transfer transistors includes a transistor having multi-bridge channels. At least one of the first and second load transistors, the first and second drive transistors, and the first and second transfer transistors includes a transistor having a different number of multi-bridge channels from the other transistors.

公开(公告)号：US09826948B2

公开(公告)日：2017-11-28

申请号：US14751766

申请日：2015-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-hun Lee ,  Jeong-sik Kim

IPC: G01T1/17 ,  A61B6/00 ,  G01T1/161

CPC classification number: A61B6/4405 ,  A61B6/42 ,  A61B6/4411 ,  A61B6/4494 ,  A61B6/548 ,  A61B6/566 ,  G01T1/161 ,  G01T1/17

Abstract: Provided is an X-ray detector including: a data transceiver configured to wirelessly receive identification (ID) information relating to a central controller from the central controller when the X-ray detector is in a sharing mode in which the X-ray detector exchanges certain data with the central controller; and a processor configured to perform a configuration based on the received ID information.

公开(公告)号：US09627327B2

公开(公告)日：2017-04-18

申请号：US14815937

申请日：2015-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Baik-woo Lee ,  Dong-hun Lee ,  Jae-gwon Jang ,  Chul-yong Jang

IPC: H01L21/00 ,  H01L23/552 ,  H01L21/56 ,  H01L21/78 ,  H01L23/00 ,  B29C70/78 ,  B29K63/00 ,  B29L9/00 ,  B29L31/34 ,  H01L25/065 ,  H01L25/18

CPC classification number: H01L23/552 ,  B29C70/78 ,  B29K2063/00 ,  B29L2009/005 ,  B29L2031/3481 ,  H01L21/561 ,  H01L21/565 ,  H01L21/78 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/18 ,  H01L2224/16227 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/85

Abstract: Provided is a method of manufacturing a semiconductor package. The method includes mounting a semiconductor device on a substrate; disposing a mold on the substrate, wherein the mold is formed to cover the semiconductor device such that at least one inner side surface of the mold has a slope; providing a molding material into the mold to encapsulate the semiconductor device; removing the mold from the substrate; and forming an electromagnetic shielding (EMS) layer to cover a top surface and side surfaces of the molding material.

公开(公告)号：US10741676B2

公开(公告)日：2020-08-11

申请号：US16453486

申请日：2019-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-hun Lee ,  Dong-won Kim

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/11 ,  H01L29/06 ,  H01L29/423 ,  G11C11/419 ,  H01L27/146 ,  H01L21/02 ,  H01L29/10 ,  H01L29/78 ,  H01L27/11578

Abstract: A semiconductor device includes a first PMOS transistor, a first NMOS transistor, and a second NMOS transistor connected to an output node of the first PMOS and NMOS transistors. The first PMOS transistor includes first nanowires, first source and drain regions on opposite sides of each first nanowire, and a first gate completely surrounding each first nanowire. The first NMOS transistor includes second nanowires, second source and drain regions on opposite sides of each second nanowire, and a second gate extending from the first gate and completely surrounding each second nanowire. The second NMOS transistor includes third nanowires, third source and drain regions on opposite sides of each third nanowire, and a third gate, separated from the first and second gates, and completely surrounding each third nanowire. A number of third nanowires is greater than that of first nanowires. The first and second gates share respective first and second nanowires.

公开(公告)号：US20150009544A1

公开(公告)日：2015-01-08

申请号：US14496607

申请日：2014-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kaname NAGATANI ,  Dong-hun Lee

IPC: H04N1/028 ,  H04N1/024

CPC classification number: H04N1/0286 ,  G02B17/08 ,  H04N1/02409 ,  H04N1/0249 ,  H04N1/02815 ,  H04N1/02835 ,  H04N1/1017 ,  H04N1/193 ,  H04N2201/0081 ,  H04N2201/02462 ,  H04N2201/02474 ,  H04N2201/02481

Abstract: A multi-functional device comprising an image forming apparatus to form a printing image and a scanner module to scan an image in a main scanning direction. The scanner module includes an illuminator to illuminate a light to a document mount, a sensor unit to read an image information of an object placed on the document mount, and an imaging lens which is disposed between the document mount and the sensor unit and focuses the light reflected from the object onto the sensor unit. The illuminator includes a light source to emit light, a light guiding unit which is lengthened in a sub-scanning direction, faces the document mount and changes a traveling path of the light emitted from the light source to illuminate the document mount, and a guide holder which comprises an installation part where the light guiding unit is installed, and a mounting part where the light source holder is mounted to provide the light source at least one side of the light guiding unit.

Abstract translation: 一种多功能设备，包括形成打印图像的图像形成装置和用于在主扫描方向上扫描图像的扫描器模块。 扫描器模块包括照明器，用于将光照射到原稿安装座;传感器单元，用于读取放置在原稿安装座上的物体的图像信息;以及成像镜头，其配置在原稿安装件和传感器单元之间， 从物体反射到传感器单元上​​的光。 照明器包括发光的光源，沿副扫描方向延长的导光单元面对原稿安装座，并改变从光源发射的光的行进路径以照亮原稿安装座，以及引导件 保持器，其包括安装有导光单元的安装部，以及安装部，其中安装有光源保持器，以在光导单元的至少一侧提供光源。

公开(公告)号：US11302826B2

公开(公告)日：2022-04-12

申请号：US16940682

申请日：2020-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-hun Lee ,  Dong-won Kim

IPC: H01L29/786 ,  H01L27/11 ,  H01L29/06 ,  H01L29/423 ,  G11C11/419 ,  H01L27/146 ,  H01L21/02 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L27/11578

Abstract: A semiconductor device includes a first PMOS transistor, a first NMOS transistor, and a second NMOS transistor connected to an output node of the first PMOS and NMOS transistors. The first PMOS transistor includes first nanowires, first source and drain regions on opposite sides of each first nanowire, and a first gate completely surrounding each first nanowire. The first NMOS transistor includes second nanowires, second source and drain regions on opposite sides of each second nanowire, and a second gate extending from the first gate and completely surrounding each second nanowire. The second NMOS transistor includes third nanowires, third source and drain regions on opposite sides of each third nanowire, and a third gate, separated from the first and second gates, and completely surrounding each third nanowire. A number of third nanowires is greater than that of first nanowires. The first and second gates share respective first and second nanowires.

公开(公告)号：US09935204B2

公开(公告)日：2018-04-03

申请号：US15246526

申请日：2016-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-hun Lee ,  Dong-won Kim

IPC: H01L29/786 ,  H01L27/11 ,  H01L29/06 ,  H01L29/423 ,  G11C11/419 ,  H01L29/66 ,  H01L29/78 ,  H01L27/11578 ,  H01L29/10

CPC classification number: H01L29/78696 ,  G11C11/419 ,  H01L27/1104 ,  H01L27/11578 ,  H01L29/0673 ,  H01L29/1037 ,  H01L29/42392 ,  H01L29/66787 ,  H01L29/785

Abstract: A static random access memory (SRAM) device includes a circuit element that includes a first inverter having a first load transistor and a first drive transistor and a second inverter having a second load transistor and a second drive transistor. Input and output nodes of the first inverter and the second inverter are cross-connected to each other. A first transfer transistor is connected to the output node of the first inverter, and a second transfer transistor is connected to the output nodes of the second inverter. Each of the first and second load transistors, the first and second drive transistors, and the first and second transfer transistors includes a transistor having multi-bridge channels. At least one of the first and second load transistors, the first and second drive transistors, and the first and second transfer transistors includes a transistor having a different number of multi-bridge channels from the other transistors.

公开(公告)号：US09851862B2

公开(公告)日：2017-12-26

申请号：US14862353

申请日：2015-09-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-hyuk Kwon ,  Woo-seok Hwang ,  Jang-won Seo ,  Dong-hun Lee ,  Sang-jin Han ,  Yong-hwan Kwon

IPC: G06F3/0481 ,  G06F3/16 ,  G06F3/0484 ,  G06F3/0488

CPC classification number: G06F3/04812 ,  G06F3/04817 ,  G06F3/04842 ,  G06F3/04886 ,  G06F3/167 ,  G06F2203/0381 ,  G06F2203/04801

Abstract: A display apparatus and a displaying method thereof are provided. The displaying method of the display apparatus includes displaying a cursor, changing a manipulation mode of the display apparatus based on an input, and changing the cursor to a highlight or a mode guide icon corresponding to the changed manipulation mode.

公开(公告)号：US09154657B2

公开(公告)日：2015-10-06

申请号：US13739195

申请日：2013-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-il Lee ,  Dong-hun Lee ,  Myung-hee Jang

IPC: H04N1/04 ,  H04N1/00 ,  H04N1/12 ,  H04N1/203

CPC classification number: H04N1/0066 ,  H04N1/00588 ,  H04N1/00591 ,  H04N1/00602 ,  H04N1/00615 ,  H04N1/00718 ,  H04N1/00774 ,  H04N1/00785 ,  H04N1/1235 ,  H04N1/2032 ,  H04N2201/02402

Abstract: A duplex scanning apparatus includes a scan case including a platen glass, a first scanning module disposed inside the scan case, a scanning module moving unit that is disposed inside the scan case perpendicular to the first scanning module and guides a movement of the first scanning module, and an automatic document feeding apparatus disposed on a top side of the scan case to cover the platen glass including a feeding frame in which a document moving route is formed, a scanning module opening formed on an upper side of the document moving route in the feeding frame, a second scanning module disposed in the scanning module opening, and a scanning module adjusting unit formed to rotate the second scanning module by a predetermined angle based on a point of the feeding frame with respect to the scanning module opening.

Abstract translation: 一种双面扫描装置，包括：扫描壳体，包括压板玻璃;第一扫描模块，设置在扫描壳体内部;扫描模块移动单元，设置在与第一扫描模块垂直的扫描壳体的内部，并引导第一扫描模块 以及设置在扫描盒的顶侧的自动文件馈送装置，以覆盖包括形成文件移动路线的馈送框架的稿台玻璃，形成在文档移动路径的上侧的扫描模块开口 设置在扫描模块开口中的第二扫描模块，以及扫描模块调整单元，其形成为基于馈送框架相对于扫描模块开口的点将第二扫描模块旋转预定角度。