公开(公告)号：US10163913B2

公开(公告)日：2018-12-25

申请号：US15344834

申请日：2016-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo-Yeon Jeong ,  Dong-Gu Yi ,  Tae-Jong Lee ,  Jae-Po Lim

IPC: H01L27/088 ,  H01L27/11 ,  H01L29/40 ,  H01L29/08 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L21/8234

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device comprises a first fin type active pattern formed on a substrate and extending in a first direction and including first to third parts. At least one dimension of the third part measuring less than the corresponding dimension of the first part. A gate electrode extending in a second direction different from the first direction is at least partially formed on the first part of the fin type active pattern. A first source/drain is formed on the third part of the fin type active pattern.

公开(公告)号：US10770467B2

公开(公告)日：2020-09-08

申请号：US16196197

申请日：2018-11-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo-Yeon Jeong ,  Dong-Gu Yi ,  Tae-Jong Lee ,  Jae-Po Lim

IPC: H01L27/11 ,  H01L27/088 ,  H01L29/40 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/8234

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device comprises a first fin type active pattern formed on a substrate and extending in a first direction and including first to third parts. At least one dimension of the third part measuring less than the corresponding dimension of the first part. A gate electrode extending in a second direction different from the first direction is at least partially formed on the first part of the fin type active pattern. A first source/drain is formed on the third part of the fin type active pattern.

公开(公告)号：US20190088662A1

公开(公告)日：2019-03-21

申请号：US16196197

申请日：2018-11-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo-Yeon Jeong ,  Dong-Gu Yi ,  Tae-Jong Lee ,  Jae-Po Lim

IPC: H01L27/11 ,  H01L29/66 ,  H01L29/40 ,  H01L27/088 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234

CPC classification number: H01L27/1104 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/408 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device comprises a first fin type active pattern formed on a substrate and extending in a first direction and including first to third parts. At least one dimension of the third part measuring less than the corresponding dimension of the first part. A gate electrode extending in a second direction different from the first direction is at least partially formed on the first part of the fin type active pattern. A first source/drain is formed on the third part of the fin type active pattern.

公开(公告)号：US20170053921A1

公开(公告)日：2017-02-23

申请号：US15344834

申请日：2016-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo-Yeon Jeong ,  Dong-Gu Yi ,  Tae-Jong Lee ,  Jae-Po Lim

IPC: H01L27/11 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/08 ,  H01L27/092

CPC classification number: H01L27/1104 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/408 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device comprises a first fin type active pattern formed on a substrate and extending in a first direction and including first to third parts. At least one dimension of the third part measuring less than the corresponding dimension of the first part. A gate electrode extending in a second direction different from the first direction is at least partially formed on the first part of the fin type active pattern. A first source/drain is formed on the third part of the fin type active pattern.

Abstract translation: 提供一种半导体器件及其制造方法。 半导体器件包括形成在衬底上并沿第一方向延伸并包括第一至第三部分的第一鳍式有源图案。 第三部分的至少一个尺寸小于第一部分的对应尺寸。 至少部分地在翅片式有源图案的第一部分上形成沿与第一方向不同的第二方向延伸的栅电极。 第一源极/漏极形成在鳍式有源图案的第三部分上。