公开(公告)号：US10586824B2

公开(公告)日：2020-03-10

申请号：US16003339

申请日：2018-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  JungHun Kim ,  Sang-Su Park ,  Beomsuk Lee ,  Gang Zhang ,  Jaesung Hur

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/335 ,  H01L25/16 ,  G02B5/20

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

公开(公告)号：US20200075650A1

公开(公告)日：2020-03-05

申请号：US16402423

申请日：2019-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhwa Kim ,  Kwan Sik Kim ,  Sang Su Park ,  Beom Suk Lee ,  Man Geun Cho ,  Min Jun Choi

IPC: H01L27/146 ,  H01L27/142 ,  H04N5/3745

Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first via extending into a first surface of the substrate such that a first upper surface of the first via is exposed adjacent the first surface of the substrate, a second upper surface of the first via extending away from the first surface of the substrate, first to third insulating films sequentially stacked on the first surface of the substrate, and a contact extending through the first to third insulating films and into the second upper surface of the first via. The contact includes a first portion within the first via, a second portion in the first insulating film, a third portion in the second insulating film, and a fourth portion in the third insulating film.

公开(公告)号：US11948964B2

公开(公告)日：2024-04-02

申请号：US16904708

申请日：2020-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmook Lim ,  Sungin Kim ,  Changhwa Kim ,  Yeoseon Choi

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/1463

Abstract: An image sensor is disclosed. The image sensor includes a semiconductor substrate, a plurality of pillars protruding from the semiconductor substrate, and spaced from each other, a spacer layer on the semiconductor substrate and a sidewall of each of the plurality of pillars, a plurality of gate structures on the spacer layer, and a plurality of unit pixels arranged in a matrix form. The first unit pixel includes a first photodiode (PD) formed in the semiconductor substrate, a first pillar, a second pillar and a third pillar of the plurality of pillars, and a first gate structure and a second gate structure of the plurality of gate structures. Each of the first pillar and the second pillar includes a first channel region and a first drain region on the first channel region. The third pillar is not surround by any gate structure of the plurality of gate structures.

公开(公告)号：US11804438B2

公开(公告)日：2023-10-31

申请号：US17654486

申请日：2022-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Kong Siew ,  Wei Hsiung Tseng ,  Changhwa Kim

IPC: H01L29/41 ,  H01L23/535 ,  H01L23/485 ,  H01L21/768 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/165 ,  H01L21/285

CPC classification number: H01L23/535 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76843 ,  H01L21/76895 ,  H01L23/485 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785 ,  H01L21/28518 ,  H01L21/76805 ,  H01L21/76831 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate having an active region, a gate structure disposed on the active region, a source/drain region disposed in the active region at a side of the gate structure, a first interlayer insulating layer and a second interlayer insulating layer sequentially disposed on the gate structure and the source/drain region, a first contact plug connected to the source/drain region through the first interlayer insulating layer, a second contact plug connected to the gate structure through the first interlayer insulating layer and the second interlayer insulating layer, a first metal line disposed on the second interlayer insulating layer, and having a metal via disposed in the second interlayer insulating layer and connected to the first contact plug, and a second metal line disposed on the second interlayer insulating layer, and directly connected to the second contact plug.

公开(公告)号：US11011562B2

公开(公告)日：2021-05-18

申请号：US16402423

申请日：2019-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhwa Kim ,  Kwan Sik Kim ,  Sang Su Park ,  Beom Suk Lee ,  Man Geun Cho ,  Min Jun Choi

IPC: H01L27/30 ,  H01L27/146 ,  H04N5/3745 ,  H01L27/142

Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first via extending into a first surface of the substrate such that a first upper surface of the first via is exposed adjacent the first surface of the substrate, a second upper surface of the first via extending away from the first surface of the substrate, first to third insulating films sequentially stacked on the first surface of the substrate, and a contact extending through the first to third insulating films and into the second upper surface of the first via. The contact includes a first portion within the first via, a second portion in the first insulating film, a third portion in the second insulating film, and a fourth portion in the third insulating film.

公开(公告)号：US11004889B2

公开(公告)日：2021-05-11

申请号：US16658855

申请日：2019-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Su Park ,  Kwansik Kim ,  Yoonkyoung Kim ,  Changhwa Kim ,  Mangeun Cho ,  Hyungi Hong

IPC: H01L27/146 ,  H01L21/762 ,  H01L21/223 ,  H01L21/225

Abstract: A method of fabricating an image sensor is provided. The method includes comprises forming a deep trench in a semiconductor substrate, performing a first plasma doping process to form a first impurity region a portion of in the semiconductor substrate adjacent to inner sidewalls and a bottom surface of the deep trench, the first impurity region being doped with first impurities of a first conductivity type, and performing an annealing process to diffuse the first impurities from the first impurity region into the semiconductor substrate to form a photoelectric conversion part.

公开(公告)号：US10043800B2

公开(公告)日：2018-08-07

申请号：US15442859

申请日：2017-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  Kyungin Choi ,  Hwichan Jun ,  Inchan Hwang

IPC: H01L21/8234 ,  H01L27/088 ,  H01L27/02 ,  H01L23/528 ,  H01L29/51 ,  H01L29/66

Abstract: An integrated circuit device includes a substrate including a device active region, a fin-type active region protruding from the substrate on the device active region, a gate line crossing the fin-type active region and overlapping a surface and opposite sidewalls of the fin-type active region, an insulating spacer disposed on sidewalls of the gate line, a source region and a drain region disposed on the fin-type active region at opposite sides of the gate line, a first conductive plug connected the source or drain regions, and a capping layer disposed on the gate line and extending parallel to the gate line. The capping layer includes a first part overlapping the gate line, and a second part overlapping the insulating spacer. The first and second parts have different compositions with respect to each other. The second part contacts the first part and the first conductive plug.

公开(公告)号：US12132001B2

公开(公告)日：2024-10-29

申请号：US18476571

申请日：2023-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Kong Siew ,  Wei Hsiung Tseng ,  Changhwa Kim

IPC: H01L29/06 ,  H01L21/768 ,  H01L23/485 ,  H01L23/535 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L21/285 ,  H01L29/165

CPC classification number: H01L23/535 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76843 ,  H01L21/76895 ,  H01L23/485 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785 ,  H01L21/28518 ,  H01L21/76805 ,  H01L21/76831 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate having an active region, a gate structure disposed on the active region, a source/drain region disposed in the active region at a side of the gate structure, a first interlayer insulating layer and a second interlayer insulating layer sequentially disposed on the gate structure and the source/drain region, a first contact plug connected to the source/drain region through the first interlayer insulating layer, a second contact plug connected to the gate structure through the first interlayer insulating layer and the second interlayer insulating layer, a first metal line disposed on the second interlayer insulating layer, and having a metal via disposed in the second interlayer insulating layer and connected to the first contact plug, and a second metal line disposed on the second interlayer insulating layer, and directly connected to the second contact plug.

公开(公告)号：US11843020B2

公开(公告)日：2023-12-12

申请号：US17577615

申请日：2022-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  JungHun Kim ,  Sang-Su Park ,  Beomsuk Lee ,  Gang Zhang ,  Jaesung Hur

IPC: H01L27/146 ,  H01L27/148 ,  G02B5/20 ,  H01L25/16 ,  H04N25/00

CPC classification number: H01L27/14647 ,  G02B5/20 ,  H01L25/167 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14638 ,  H01L27/14645 ,  H01L27/14665 ,  H01L27/14689 ,  H01L27/14812 ,  H04N25/00 ,  H01L27/14612

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

公开(公告)号：US11843017B2

公开(公告)日：2023-12-12

申请号：US17172250

申请日：2021-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyoun-Jee Ha ,  Changhwa Kim

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14831

Abstract: An image sensor includes a substrate having a first surface and a second surface that are opposite to each other. The substrate including a plurality of unit pixel regions having photoelectric conversion regions and floating diffusion regions disposed adjacent to the first surface. A pixel isolation pattern is disposed in the substrate and is configured to define the plurality of unit pixel regions. An interconnection layer is disposed on the first surface of the substrate. The interconnection layer includes a conductive structure having a connection portion that extends parallel to the first surface of the substrate and is spaced apart from the first surface of the substrate. Contacts extend vertically from the connection portion towards the first surface of the substrate. Each of the contacts are spaced apart from each other with the pixel isolation pattern interposed therebetween. The contacts are coupled to the floating diffusion regions, respectively.