公开(公告)号：US10998366B2

公开(公告)日：2021-05-04

申请号：US16732561

申请日：2020-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Yoon ,  Doo Won Kwon ,  Kwan Sik Kim ,  Tae Young Song ,  Min Jun Choi

IPC: H01L27/146 ,  H01L27/30 ,  H01L27/28 ,  H01L31/024 ,  H01L51/42 ,  H01L31/102

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

公开(公告)号：US20200075650A1

公开(公告)日：2020-03-05

申请号：US16402423

申请日：2019-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhwa Kim ,  Kwan Sik Kim ,  Sang Su Park ,  Beom Suk Lee ,  Man Geun Cho ,  Min Jun Choi

IPC: H01L27/146 ,  H01L27/142 ,  H04N5/3745

Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first via extending into a first surface of the substrate such that a first upper surface of the first via is exposed adjacent the first surface of the substrate, a second upper surface of the first via extending away from the first surface of the substrate, first to third insulating films sequentially stacked on the first surface of the substrate, and a contact extending through the first to third insulating films and into the second upper surface of the first via. The contact includes a first portion within the first via, a second portion in the first insulating film, a third portion in the second insulating film, and a fourth portion in the third insulating film.

公开(公告)号：US10566370B2

公开(公告)日：2020-02-18

申请号：US16018709

申请日：2018-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Yoon ,  Doo Won Kwon ,  Kwan Sik Kim ,  Tae Young Song ,  Min Jun Choi

IPC: H01L27/146 ,  H01L27/30 ,  H01L27/28 ,  H01L31/024

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

公开(公告)号：US11251229B2

公开(公告)日：2022-02-15

申请号：US16927240

申请日：2020-07-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Chan Kim ,  Kwan Sik Kim ,  Bo Yun Kim ,  Eun Sung Seo ,  Il Young Yoon ,  Seung Hoon Choi

IPC: H01L27/146 ,  H01L27/30 ,  H01L51/44 ,  H01L31/0232 ,  H01L31/0224

Abstract: An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.

公开(公告)号：US10748968B2

公开(公告)日：2020-08-18

申请号：US16285510

申请日：2019-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Chan Kim ,  Kwan Sik Kim ,  Bo Yun Kim ,  Eun Sung Seo ,  Il Young Yoon ,  Seung Hoon Choi

IPC: H01L27/146 ,  H01L27/30 ,  H01L51/44 ,  H01L31/0232 ,  H01L31/0224

Abstract: An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.

公开(公告)号：US11205683B2

公开(公告)日：2021-12-21

申请号：US16787429

申请日：2020-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwan Sik Kim ,  Jin Hyung Kim ,  Chang Hwa Kim ,  Hong Ki Kim ,  Sang-Su Park ,  Beom Suk Lee ,  Jae Sung Hur

IPC: H01L33/00 ,  H01L21/00 ,  H01L27/30 ,  H01L51/44 ,  G02B1/18

Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first insulating layer on the substrate, a contact penetrating through the first insulating layer, a color filter on at least one side of the contact, and a moisture absorption prevention layer in contact with a sidewall of the contact and extending on an upper surface of the color filter.

公开(公告)号：US11011562B2

公开(公告)日：2021-05-18

申请号：US16402423

申请日：2019-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhwa Kim ,  Kwan Sik Kim ,  Sang Su Park ,  Beom Suk Lee ,  Man Geun Cho ,  Min Jun Choi

IPC: H01L27/30 ,  H01L27/146 ,  H04N5/3745 ,  H01L27/142

Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first via extending into a first surface of the substrate such that a first upper surface of the first via is exposed adjacent the first surface of the substrate, a second upper surface of the first via extending away from the first surface of the substrate, first to third insulating films sequentially stacked on the first surface of the substrate, and a contact extending through the first to third insulating films and into the second upper surface of the first via. The contact includes a first portion within the first via, a second portion in the first insulating film, a third portion in the second insulating film, and a fourth portion in the third insulating film.

公开(公告)号：US20190371861A1

公开(公告)日：2019-12-05

申请号：US16285510

申请日：2019-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Chan Kim ,  Kwan Sik Kim ,  Bo Yun Kim ,  Eun Sung Seo ,  II Young Yoon ,  Seung Hoon Choi

IPC: H01L27/30 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/0232 ,  H01L51/44

Abstract: An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.

公开(公告)号：US11818904B2

公开(公告)日：2023-11-14

申请号：US17373103

申请日：2021-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Jun Choi ,  Kwan Sik Kim ,  Chang Hwa Kim ,  Sang Su Park ,  Man Geun Cho

IPC: H10K39/32 ,  H01L49/02 ,  H04N25/75 ,  H01L27/146

CPC classification number: H10K39/32 ,  H01L28/40 ,  H04N25/75 ,  H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

公开(公告)号：US11482564B2

公开(公告)日：2022-10-25

申请号：US16941958

申请日：2020-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Yoon ,  Doo Won Kwon ,  Kwan Sik Kim ,  In Gyu Baek ,  Tae Young Song

IPC: H01L27/32 ,  H01L27/146 ,  H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L31/18 ,  H01L23/00

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.