公开(公告)号：US10896955B2

公开(公告)日：2021-01-19

申请号：US16401347

申请日：2019-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmook Lim ,  Sang Su Kim ,  Woo Seok Park ,  Sung Gi Hur

IPC: H01L27/01 ,  H01L29/06 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/786 ,  H01L21/762 ,  H01L29/66 ,  H01L21/02 ,  H01L27/092 ,  H01L29/78

Abstract: A semiconductor device includes a substrate, an active region disposed on the substrate and extending in a first direction, a device isolation layer adjacent to the active region, a gate structure disposed in the active region, the gate structure extending in a second direction crossing the first direction, and covering a portion of the device isolation layer, a gate separation pattern contacting an end of the gate structure, and an impurity region disposed below the gate separation pattern and on the device isolation layer.

公开(公告)号：US11948964B2

公开(公告)日：2024-04-02

申请号：US16904708

申请日：2020-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmook Lim ,  Sungin Kim ,  Changhwa Kim ,  Yeoseon Choi

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/1463

Abstract: An image sensor is disclosed. The image sensor includes a semiconductor substrate, a plurality of pillars protruding from the semiconductor substrate, and spaced from each other, a spacer layer on the semiconductor substrate and a sidewall of each of the plurality of pillars, a plurality of gate structures on the spacer layer, and a plurality of unit pixels arranged in a matrix form. The first unit pixel includes a first photodiode (PD) formed in the semiconductor substrate, a first pillar, a second pillar and a third pillar of the plurality of pillars, and a first gate structure and a second gate structure of the plurality of gate structures. Each of the first pillar and the second pillar includes a first channel region and a first drain region on the first channel region. The third pillar is not surround by any gate structure of the plurality of gate structures.

公开(公告)号：US11195928B2

公开(公告)日：2021-12-07

申请号：US16822275

申请日：2020-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmook Lim ,  Sangsu Kim ,  Wooseok Park ,  Daekwon Joo

IPC: H01L29/423 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/306

Abstract: A semiconductor device is provided including an active region on a substrate A plurality of channel layers is spaced apart on the active region. Gate structures are provided. The gate structures intersect the active region and the plurality of channel layers. The gate structures surround the plurality of channel layers. Source/drain regions are disposed on the active region on at least one side of the gate structures. The source/drain regions contact with the plurality of channel layers. A lower insulating layer is disposed between side surfaces of the gate structures on the source/drain regions. Contact plugs penetrate through the lower insulating layer. The contact plugs contact the source/drain regions. An isolation structure intersects the active region on the substrate and is disposed between the source/drain regions adjacent to each other. Each of the gate structures includes a gate electrode and a gate capping layer including materials different from each other.

公开(公告)号：US12136643B2

公开(公告)日：2024-11-05

申请号：US17720010

申请日：2022-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kangmook Lim ,  Seungsik Kim ,  Yeoseon Choi

IPC: H01L27/146

Abstract: An image sensor may include a first substrate having first and second surfaces and including unit pixel regions, each of which includes a device isolation pattern and a photoelectric conversion region adjacent to the first surface of the first substrate, a pixel isolation pattern provided in the first substrate to define the unit pixel regions and to penetrate the device isolation pattern, a first impurity region and a floating diffusion region provided in the first substrate and adjacent to the first surface, a second substrate provided on the first substrate to have third and fourth surfaces, a second impurity region provided in the second substrate and adjacent to the third surface, and ground and body contacts coupled to the first and second impurity regions, respectively. The ground contact and the body contact may be electrically separated from each other.

公开(公告)号：US20210036121A1

公开(公告)日：2021-02-04

申请号：US16822275

申请日：2020-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmook Lim ,  Sangsu Kim ,  Wooseok Park ,  Daekwon Joo

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L27/088

Abstract: A semiconductor device is provided including an active region on a substrate A plurality of channel layers is spaced apart on the active region. Gate structures are provided. The gate structures intersect the active region and the plurality of channel layers. The gate structures surround the plurality of channel layers. Source/drain regions are disposed on the active region on at least one side of the gate structures. The source/drain regions contact with the plurality of channel layers. A lower insulating layer is disposed between side surfaces of the gate structures on the source/drain regions. Contact plugs penetrate through the lower insulating layer. The contact plugs contact the source/drain regions. An isolation structure intersects the active region on the substrate and is disposed between the source/drain regions adjacent to each other. Each of the gate structures includes a gate electrode and a gate capping layer including materials different from each other.