公开(公告)号：US11099441B2

公开(公告)日：2021-08-24

申请号：US16460829

申请日：2019-07-02

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo Yang ,  Hong Sick Park ,  Hyun Eok Shin ,  Joon Yong Park ,  Gyung Min Baek ,  Sang Won Shin ,  Ju Hyun Lee

IPC: H01L29/49 ,  G02F1/1362 ,  H01L27/12 ,  G02F1/1335 ,  H01L21/285 ,  G02F1/1368 ,  H01L21/3213

Abstract: A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive layer and a metal oxide layer stacked on the conductive layer, wherein the metal oxide layer comprises molybdenum (Mo), tantalum (Ta), and oxygen (O). The conductive layer includes a first metal layer on the first base, and a second metal layer between the first metal layer and the metal oxide layer. The second metal layer has a higher electrical conductivity than the first metal layer, and a thickness of the second metal layer is greater than a thickness of the first metal layer.

公开(公告)号：US09786694B2

公开(公告)日：2017-10-10

申请号：US15264490

申请日：2016-09-13

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Gwang Min Cha ,  Su Kyoung Yang ,  Chan Woo Yang

IPC: H01L27/12 ,  H01L23/52 ,  H01L23/532 ,  H01L29/24 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L21/4763 ,  H01L21/02 ,  H01L29/45

CPC classification number: H01L27/124 ,  H01L21/0206 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/47635 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A display device and a method of manufacturing the display device are provided. According to an exemplary embodiment, a display device includes: a substrate; a gate electrode disposed on the substrate; a semiconductor pattern disposed on the gate electrode; data wiring disposed on the semiconductor pattern and having a data line, a source electrode, and a drain electrode; a first barrier layer disposed between the data wiring and the semiconductor pattern; and undercuts disposed on at least one side of each segment of the first barrier layer.

公开(公告)号：US10008518B2

公开(公告)日：2018-06-26

申请号：US14926416

申请日：2015-10-29

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo Yang ,  Hyun Eok Shin ,  Su Kyoung Yang ,  Dong Min Lee

IPC: G02F1/136 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/1262 ,  H01L27/1288 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin-film transistor array panel includes a gate line disposed on a first substrate, the gate line including a gate electrode, a semiconductor layer disposed on the first substrate, the semiconductor layer including an oxide semiconductor, a data wire layer disposed on the first substrate, the data wire layer including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, a capping layer disposed on the data wire layer, a tilt layer disposed on the capping layer, and a passivation layer disposed on the tilt layer, in which the tilt layer includes a silsesquioxane-based copolymer.

公开(公告)号：US11133370B2

公开(公告)日：2021-09-28

申请号：US16742449

申请日：2020-01-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kap Soo Yoon ,  Chan Woo Yang ,  June Whan Choi

IPC: H01L27/14 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  H01L51/00

Abstract: An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.

公开(公告)号：US20190324337A1

公开(公告)日：2019-10-24

申请号：US16460829

申请日：2019-07-02

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo Yang ,  Hong Sick Park ,  Hyun Eok Shin ,  Joon Yong Park ,  Gyung Min Baek ,  Sang Won Shin ,  Ju Hyun Lee

IPC: G02F1/1362 ,  H01L21/3213 ,  H01L29/49 ,  G02F1/1368 ,  G02F1/1335 ,  H01L27/12 ,  H01L21/285

Abstract: A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive metal layer and a metal oxide layer stacked on one another, wherein the metal oxide layer comprises MoxTayOz, wherein a content of tantalum is equal to or less than 2.0 at % (atomic percent) based on a total number of metal atoms.

公开(公告)号：US10134855B2

公开(公告)日：2018-11-20

申请号：US14691092

申请日：2015-04-20

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo Yang ,  Hyune Ok Shin ,  Chang Oh Jeong ,  Su Kyoung Yang ,  Dong Min Lee

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/45 ,  C22C29/12

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.

公开(公告)号：US09774008B2

公开(公告)日：2017-09-26

申请号：US14698265

申请日：2015-04-28

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Min Lee ,  Hyun Eok Shin ,  Chan Woo Yang ,  Su Kyoung Yang

IPC: H01L29/08 ,  H01L51/52

CPC classification number: H01L51/5271 ,  H01L51/5265 ,  H01L2251/301 ,  H01L2251/558

Abstract: An organic light-emitting diode (OLED) display device includes a substrate; a transistor device disposed on the substrate; a first electrode electrically connected to the transistor device; an organic light-emitting layer disposed on the first electrode; and a second electrode disposed on the organic light-emitting layer. The OLED display device further includes a transflective layer contacting a lower surface of the first electrode and having a relatively higher refractive index than the first electrode.

公开(公告)号：US09082795B2

公开(公告)日：2015-07-14

申请号：US14477587

申请日：2014-09-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Doo Hyoung Lee ,  Chan Woo Yang ,  Seung-Ho Jung ,  Doo Na Kim ,  Bo Sung Kim ,  Eun Hye Park ,  June Whan Choi

IPC: H01L29/786 ,  H01L21/336 ,  H01L29/66 ,  H01B1/06 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01B1/06 ,  H01L21/02565 ,  H01L21/02628 ,  H01L29/7869

Abstract: A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio ( R , R ⁡ [ mol ⁢ ⁢ % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio ( R , R ⁡ [ mol ⁢ ⁢ % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管基板包括：半导体层，包括设置在绝缘基板上的金属，与半导体层重叠的栅极电极以及与半导体层重叠的源电极和漏电极，其中金属 在半导体层中包含铟（In），锌（Zn）和锡（Sn），摩尔比（R，R⁡[mol⁢％] = [In] [In + Zn + Sn]×100） 对于半导体层中的金属，铟（In）的含量小于约20％，更具体地说，摩尔比（R，R⁡[mol·⁢％] = [In] [In + Zn + Sn]×100 ）的半导体层中的金属的In（In）为约5％至约13％。

公开(公告)号：US11825712B2

公开(公告)日：2023-11-21

申请号：US17446036

申请日：2021-08-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kap Soo Yoon ,  Chan Woo Yang ,  June Whan Choi

IPC: H01L21/00 ,  H10K59/131 ,  H10K50/818 ,  H10K50/844 ,  H10K59/38 ,  H10K59/123 ,  H10K59/126 ,  H10K71/00 ,  H10K59/12 ,  H10K102/00 ,  H10K102/10

CPC classification number: H10K59/131 ,  H10K50/818 ,  H10K50/844 ,  H10K59/123 ,  H10K59/126 ,  H10K59/38 ,  H10K71/00 ,  H10K59/1201 ,  H10K71/621 ,  H10K2102/00 ,  H10K2102/103 ,  H10K2102/351

Abstract: An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.

公开(公告)号：US11682705B2

公开(公告)日：2023-06-20

申请号：US17088779

申请日：2020-11-04

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo Yang ,  Hyune Ok Shin ,  Chang Oh Jeong ,  Su Kyoung Yang ,  Dong Min Lee

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/45 ,  C22C29/12

CPC classification number: H01L29/41733 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/45 ,  H01L29/7869 ,  C22C29/12

Abstract: A thin film transistor including a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.