Organic light emitting diode display device including etch stop layer

    公开(公告)号:US11342404B2

    公开(公告)日:2022-05-24

    申请号:US16894953

    申请日:2020-06-08

    Abstract: An organic light emitting diode display including: a substrate; a TFT on the substrate; a planarization layer on the TFT; a pixel electrode on the planarization layer, wherein the pixel electrode includes upper and lower layers including a transparent conductive oxide and an intermediate layer including silver; an etch stop layer on the pixel electrode, wherein an upper surface of the pixel electrode is exposed by the etch stop layer; a partition on the etch stop layer, wherein the upper surface of the pixel electrode is exposed by the partition; an organic emission layer on the upper surface of the pixel electrode where the upper surface of the pixel electrode is exposed by the etch stop layer and the partition; and a common electrode on the organic emission layer and the partition, wherein the etch stop layer covers an edge and a side surface of the pixel electrode.

    Liquid crystal display and method for fabricating the same
    9.
    发明授权
    Liquid crystal display and method for fabricating the same 有权
    液晶显示器及其制造方法

    公开(公告)号:US09541784B2

    公开(公告)日:2017-01-10

    申请号:US14099968

    申请日:2013-12-08

    CPC classification number: G02F1/133345 G02F1/13439

    Abstract: A liquid crystal display includes a substrate; a first electrode on the substrate; a second electrode on the first electrode and separated from the first electrode; a cavity defined between the first electrode and the second electrode; a first protection layer on the second electrode; a cover layer on the first protection layer; and a liquid crystal layer including liquid crystal molecules in the cavity. The second electrode includes metal oxide and zinc oxide.

    Abstract translation: 液晶显示器包括基板; 基板上的第一电极; 第一电极上的第二电极并与第一电极分离; 限定在所述第一电极和所述第二电极之间的空腔; 第二电极上的第一保护层; 第一保护层上的覆盖层; 以及在空腔中包含液晶分子的液晶层。 第二电极包括金属氧化物和氧化锌。

    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    薄膜晶体管及其制造方法

    公开(公告)号:US20150084035A1

    公开(公告)日:2015-03-26

    申请号:US14261935

    申请日:2014-04-25

    Abstract: A thin film transistor includes: a substrate; an oxide semiconductor layer disposed on the substrate; a source electrode and a drain electrode each connected to the oxide semiconductor layer and facing each other with respect to the oxide semiconductor layer; an insulating layer disposed on the oxide semiconductor layer; and a gate electrode disposed on the insulating layer. The insulating layer includes a first layer that includes silicon oxide (SiOx), a second layer that is a hydrogen blocking layer, and a third layer that includes silicon nitride (SiNx). The first, second and third layers are sequentially stacked.

    Abstract translation: 薄膜晶体管包括:基板; 设置在所述基板上的氧化物半导体层; 源电极和漏电极,各自连接到氧化物半导体层并且相对于氧化物半导体层彼此面对; 设置在所述氧化物半导体层上的绝缘层; 以及设置在所述绝缘层上的栅电极。 绝缘层包括包含氧化硅(SiOx)的第一层,作为氢阻挡层的第二层和包括氮化硅(SiNx)的第三层。 顺序堆叠第一层,第二层和第三层。

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