公开(公告)号：US10134855B2

公开(公告)日：2018-11-20

申请号：US14691092

申请日：2015-04-20

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo Yang ,  Hyune Ok Shin ,  Chang Oh Jeong ,  Su Kyoung Yang ,  Dong Min Lee

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/45 ,  C22C29/12

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.

公开(公告)号：US11682705B2

公开(公告)日：2023-06-20

申请号：US17088779

申请日：2020-11-04

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo Yang ,  Hyune Ok Shin ,  Chang Oh Jeong ,  Su Kyoung Yang ,  Dong Min Lee

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/45 ,  C22C29/12

CPC classification number: H01L29/41733 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/45 ,  H01L29/7869 ,  C22C29/12

Abstract: A thin film transistor including a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.

公开(公告)号：US10861949B2

公开(公告)日：2020-12-08

申请号：US16192802

申请日：2018-11-16

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo Yang ,  Hyune Ok Shin ,  Chang Oh Jeong ,  Su Kyoung Yang ,  Dong Min Lee

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/45 ,  C22C29/12

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.