公开(公告)号：US20240371719A1

公开(公告)日：2024-11-07

申请号：US18311473

申请日：2023-05-03

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： JongChan Park ,  YoungMin Kim ,  TaeKeun Lee

IPC: H01L23/367 ,  H01L23/00 ,  H01L23/42

Abstract: A semiconductor device has an electrical component and a heat sink disposed over the electrical component. The heat sink has a cover with a wall extending from the cover forming a pocket around a perimeter of the electrical component. The heat sink also has a horizontal step, and a riser extending from the horizontal step to the cover. The wall extends from the cover to form the pocket. A TIM is disposed between the cover and a surface of the electrical component. The TIM can be liquid metal. The heat sink is pressed onto the TIM under force and heat to distribute the TIM between the cover and surface of the electrical component. The TIM remains contained within the pocket by the wall. The wall or cover can have a vent hole. The TIM may extend over a side surface of the electrical component.

公开(公告)号：US20240170422A1

公开(公告)日：2024-05-23

申请号：US18429418

申请日：2024-01-31

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Wagno Alves Braganca, JR. ,  KyungOe Kim ,  TaeKeun Lee

IPC: H01L23/00 ,  B23K1/005 ,  H05K3/34

CPC classification number: H01L24/06 ,  B23K1/0056 ,  H01L24/03 ,  H05K3/34 ,  H01L2224/0363 ,  H05K2203/107

Abstract: A method of making a semiconductor device involves the steps of disposing a first semiconductor die over a substrate and disposing a beam homogenizer over the first semiconductor die. A beam from the beam homogenizer impacts the first semiconductor die. The method further includes the steps of determining a positional offset of the beam relative to the first semiconductor die in a number of pixels, using a first calibration equation to convert the number of pixels into a distance in millimeters, and moving the beam homogenizer the distance in millimeters to align the beam and first semiconductor die.

公开(公告)号：US11735489B2

公开(公告)日：2023-08-22

申请号：US17349135

申请日：2021-06-16

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： TaeKeun Lee ,  Youngcheol Kim ,  Youngmin Kim ,  Yongmin Kim

IPC: H01L23/48 ,  H01L23/367 ,  H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L23/373 ,  H01L21/78

CPC classification number: H01L23/367 ,  H01L21/4857 ,  H01L21/4882 ,  H01L23/3735 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/49838 ,  H01L24/16 ,  H01L21/78 ,  H01L2224/16235 ,  H01L2924/35121

Abstract: A semiconductor device has an electrical component and a first TIM with a first compliant property is disposed over a surface of the electrical component. A second TIM having a second compliant property greater than the first compliant property is disposed over the surface of the electrical component within the first TIM. A third TIM can be disposed over the surface of the electrical component along the first TIM. A heat sink is disposed over the first TIM and second TIM. The second TIM has a shape of a star pattern, grid of dots, parallel lines, serpentine, or concentric geometric shapes. The first TIM provides adhesion for joint reliability and the second TIM provides stress relief. Alternatively, a heat spreader is disposed over the first TIM and second TIM and a heat sink is disposed over a third TIM and fourth TIM on the heat spreader.

公开(公告)号：US20240063196A1

公开(公告)日：2024-02-22

申请号：US17820156

申请日：2022-08-16

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： TaeKeun Lee ,  Hyunil Bae

IPC: H01L25/16 ,  H01L23/552 ,  H01L23/367 ,  H01L23/13 ,  H01L21/48 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L25/165 ,  H01L23/552 ,  H01L23/3675 ,  H01L23/13 ,  H01L21/4853 ,  H01L23/49811 ,  H01L23/49838 ,  H01L24/16 ,  H01L24/13 ,  H01L24/32 ,  H01L24/73 ,  H01L2924/3025 ,  H01L2924/1616 ,  H01L2924/16251 ,  H01L2924/16235 ,  H01L2224/13655 ,  H01L2224/13582 ,  H01L2224/1601 ,  H01L2224/16227 ,  H01L2224/16265 ,  H01L2224/32225 ,  H01L2224/32265 ,  H01L2224/73204 ,  H01L24/48 ,  H01L2224/48227 ,  H01L25/0657

Abstract: A semiconductor device has a semiconductor die, substrate, and plurality of first conductive pillars formed over the semiconductor die or substrate. Alternatively, the first conductive pillars formed over the semiconductor die and substrate. An electrical component is disposed over the semiconductor die. The electrical component can be a double-sided IPD. The semiconductor die and electrical component are disposed over the substrate. A shielding frame is disposed over the semiconductor die. A plurality of second conductive pillars is formed over a first surface of the electrical component. A plurality of third conductive pillars is formed over a second surface of the electrical component opposite the first surface of the electrical component. A bump cap can be formed over a distal end of the conductive pillars. The substrate has a cavity and the electrical component is disposed within the cavity. An underfill material is deposited between the semiconductor die and substrate.

公开(公告)号：US11830785B2

公开(公告)日：2023-11-28

申请号：US17450146

申请日：2021-10-06

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： TaeKeun Lee ,  Youngmin Kim ,  Yongmin Kim

IPC: H01L23/367 ,  H01L25/065 ,  H01L25/10 ,  H01L25/00

CPC classification number: H01L23/3675 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/50

Abstract: A semiconductor device has a substrate and a first semiconductor die disposed over the substrate. A subpackage is also disposed over the substrate. A stiffener is disposed over the substrate around the first semiconductor die and subpackage. A heat spreader is disposed over the stiffener. The heat spreader is thermally coupled to the first semiconductor die. The heat spreader has an opening over the subpackage.

公开(公告)号：US20220406675A1

公开(公告)日：2022-12-22

申请号：US17349135

申请日：2021-06-16

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： TaeKeun Lee ,  Youngcheol Kim ,  Youngmin Kim ,  Yongmin Kim

IPC: H01L23/367 ,  H01L23/498 ,  H01L23/373 ,  H01L21/48 ,  H01L23/00

Abstract: A semiconductor device has an electrical component and a first TIM with a first compliant property is disposed over a surface of the electrical component. A second TIM having a second compliant property greater than the first compliant property is disposed over the surface of the electrical component within the first TIM. A third TIM can be disposed over the surface of the electrical component along the first TIM. A heat sink is disposed over the first TIM and second TIM. The second TIM has a shape of a star pattern, grid of dots, parallel lines, serpentine, or concentric geometric shapes. The first TIM provides adhesion for joint reliability and the second TIM provides stress relief. Alternatively, a heat spreader is disposed over the first TIM and second TIM and a heat sink is disposed over a third TIM and fourth TIM on the heat spreader.

公开(公告)号：US20210296268A1

公开(公告)日：2021-09-23

申请号：US17068233

申请日：2020-10-12

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Wagno Alves Braganca, JR. ,  KyungOe Kim ,  TaeKeun Lee

IPC: H01L23/00 ,  H05K3/34 ,  B23K1/005

Abstract: A method of making a semiconductor device involves the steps of disposing a first semiconductor die over a substrate and disposing a beam homogenizer over the first semiconductor die. A beam from the beam homogenizer impacts the first semiconductor die. The method further includes the steps of determining a positional offset of the beam relative to the first semiconductor die in a number of pixels, using a first calibration equation to convert the number of pixels into a distance in millimeters, and moving the beam homogenizer the distance in millimeters to align the beam and first semiconductor die.

公开(公告)号：US12125764B2

公开(公告)日：2024-10-22

申请号：US18344182

申请日：2023-06-29

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： TaeKeun Lee ,  Youngcheol Kim ,  Youngmin Kim ,  Yongmin Kim

IPC: H01L23/48 ,  H01L21/48 ,  H01L23/00 ,  H01L23/367 ,  H01L23/373 ,  H01L23/498 ,  H01L21/78

CPC classification number: H01L23/367 ,  H01L21/4857 ,  H01L21/4882 ,  H01L23/3735 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/49838 ,  H01L24/16 ,  H01L21/78 ,  H01L2224/16235 ,  H01L2924/35121

Abstract: A semiconductor device has an electrical component and a first TIM with a first compliant property is disposed over a surface of the electrical component. A second TIM having a second compliant property greater than the first compliant property is disposed over the surface of the electrical component within the first TIM. A third TIM can be disposed over the surface of the electrical component along the first TIM. A heat sink is disposed over the first TIM and second TIM. The second TIM has a shape of a star pattern, grid of dots, parallel lines, serpentine, or concentric geometric shapes. The first TIM provides adhesion for joint reliability and the second TIM provides stress relief. Alternatively, a heat spreader is disposed over the first TIM and second TIM and a heat sink is disposed over a third TIM and fourth TIM on the heat spreader.

公开(公告)号：US11929334B2

公开(公告)日：2024-03-12

申请号：US17068233

申请日：2020-10-12

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Wagno Alves Braganca, Jr. ,  KyungOe Kim ,  TaeKeun Lee

IPC: B23K26/03 ,  B23K1/005 ,  B23K26/06 ,  H01L23/00 ,  H05K3/34

CPC classification number: H01L24/06 ,  B23K1/0056 ,  H01L24/03 ,  H05K3/34 ,  H01L2224/0363 ,  H05K2203/107

Abstract: A method of making a semiconductor device involves the steps of disposing a first semiconductor die over a substrate and disposing a beam homogenizer over the first semiconductor die. A beam from the beam homogenizer impacts the first semiconductor die. The method further includes the steps of determining a positional offset of the beam relative to the first semiconductor die in a number of pixels, using a first calibration equation to convert the number of pixels into a distance in millimeters, and moving the beam homogenizer the distance in millimeters to align the beam and first semiconductor die.

公开(公告)号：US20230352359A1

公开(公告)日：2023-11-02

申请号：US18344182

申请日：2023-06-29

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： TaeKeun Lee ,  Youngcheol Kim ,  Youngmin Kim ,  Yongmin Kim

IPC: H01L21/48 ,  H01L23/373 ,  H01L23/498 ,  H01L23/00 ,  H01L23/367

CPC classification number: H01L23/367 ,  H01L21/4857 ,  H01L21/4882 ,  H01L23/3735 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/49838 ,  H01L24/16 ,  H01L21/78 ,  H01L2224/16235 ,  H01L2924/35121

Abstract: A semiconductor device has an electrical component and a first TIM with a first compliant property is disposed over a surface of the electrical component. A second TIM having a second compliant property greater than the first compliant property is disposed over the surface of the electrical component within the first TIM. A third TIM can be disposed over the surface of the electrical component along the first TIM. A heat sink is disposed over the first TIM and second TIM. The second TIM has a shape of a star pattern, grid of dots, parallel lines, serpentine, or concentric geometric shapes. The first TIM provides adhesion for joint reliability and the second TIM provides stress relief. Alternatively, a heat spreader is disposed over the first TIM and second TIM and a heat sink is disposed over a third TIM and fourth TIM on the heat spreader.