Invention Application
- Patent Title: Semiconductor Device and Method of Forming Hybrid TIM Layers
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Application No.: US17349135Application Date: 2021-06-16
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Publication No.: US20220406675A1Publication Date: 2022-12-22
- Inventor: TaeKeun Lee , Youngcheol Kim , Youngmin Kim , Yongmin Kim
- Applicant: STATS ChipPAC Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L23/498 ; H01L23/373 ; H01L21/48 ; H01L23/00

Abstract:
A semiconductor device has an electrical component and a first TIM with a first compliant property is disposed over a surface of the electrical component. A second TIM having a second compliant property greater than the first compliant property is disposed over the surface of the electrical component within the first TIM. A third TIM can be disposed over the surface of the electrical component along the first TIM. A heat sink is disposed over the first TIM and second TIM. The second TIM has a shape of a star pattern, grid of dots, parallel lines, serpentine, or concentric geometric shapes. The first TIM provides adhesion for joint reliability and the second TIM provides stress relief. Alternatively, a heat spreader is disposed over the first TIM and second TIM and a heat sink is disposed over a third TIM and fourth TIM on the heat spreader.
Public/Granted literature
- US11735489B2 Semiconductor device and method of forming hybrid TIM layers Public/Granted day:2023-08-22
Information query
IPC分类: