Semiconductor Device and Method of Forming Hybrid TIM Layers

    公开(公告)号:US20220406675A1

    公开(公告)日:2022-12-22

    申请号:US17349135

    申请日:2021-06-16

    Abstract: A semiconductor device has an electrical component and a first TIM with a first compliant property is disposed over a surface of the electrical component. A second TIM having a second compliant property greater than the first compliant property is disposed over the surface of the electrical component within the first TIM. A third TIM can be disposed over the surface of the electrical component along the first TIM. A heat sink is disposed over the first TIM and second TIM. The second TIM has a shape of a star pattern, grid of dots, parallel lines, serpentine, or concentric geometric shapes. The first TIM provides adhesion for joint reliability and the second TIM provides stress relief. Alternatively, a heat spreader is disposed over the first TIM and second TIM and a heat sink is disposed over a third TIM and fourth TIM on the heat spreader.

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