公开(公告)号：US20160026396A1

公开(公告)日：2016-01-28

申请号：US14504228

申请日：2014-10-01

申请人： SK hynix Inc.

发明人： Hae Chan PARK

IPC分类号： G06F3/06 ,  H04B7/24

CPC分类号： G06F3/0613 ,  G06F3/0655 ,  G06F3/0673 ,  H04B7/24

摘要： A semiconductor memory apparatus includes a memory circuit unit, a radio frequency (RF) signal unit which wirelessly transmits and receives signals, and a control circuit unit which accesses the memory circuit unit in response to a signal received through the RF signal unit and provides data of the memory circuit unit to the RF signal unit. At least one of the RF signal unit and the control circuit unit has a one-chip structure with the memory circuit unit.

摘要翻译： 半导体存储装置包括存储电路单元，无线发送和接收信号的射频（RF）信号单元，以及响应于通过RF信号单元接收到的信号而访问存储电路单元并提供数据的控制电路单元 的存储器电路单元连接到RF信号单元。 RF信号单元和控制电路单元中的至少一个具有与存储器电路单元的单芯片结构。

公开(公告)号：US20150228336A1

公开(公告)日：2015-08-13

申请号：US14316365

申请日：2014-06-26

申请人： SK Hynix Inc.

发明人： Ka Young KIM ,  Hae Chan PARK

IPC分类号： G11C13/00

CPC分类号： G11C13/0033 ,  G11C11/1675 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0035 ,  G11C13/0069

摘要： A resistive memory apparatus includes a memory region including a plurality of resistive memory cells, and a controller suitable for storing a threshold number of write operations according to a data storage material of the resistive memory cells, counting numbers of write operations for the respective resistive memory cells as a write operation is performed for the memory region, and performing interrupt control when a memory cell that reaches the threshold number of write operations is detected.

摘要翻译： 电阻式存储装置包括包括多个电阻存储器单元的存储区域，以及适用于根据电阻性存储单元的数据存储材料存储阈值数量的写入操作的控制器，用于各个电阻存储器的写入操作的计数次数 执行用于存储区域的写入操作的单元，并且当检测到达到阈值写入操作次数的存储单元时执行中断控制。

公开(公告)号：US20150009752A1

公开(公告)日：2015-01-08

申请号：US14494355

申请日：2014-09-23

申请人： SK hynix Inc.

发明人： Hae Chan PARK ,  Se Ho LEE

IPC分类号： G11C13/00

CPC分类号： G11C13/0004 ,  G11C11/21 ,  G11C11/5678 ,  G11C13/0028 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0042 ,  G11C2013/0078 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/74 ,  H01L45/04

摘要： A phase change memory device having a multi-level and a method of driving the same are presented. The disclosed phase change memory device includes variable resistors and shifting units. The variable resistors are interchanged into set and reset states in response to an applied current. The shifting units, which are connected to the variable resistors, shift resistance distribution in the set and reset state of the variable resistors by a predetermined level.

公开(公告)号：US20140054537A1

公开(公告)日：2014-02-27

申请号：US13791468

申请日：2013-03-08

申请人： SK HYNIX INC.

发明人： Seung Yun LEE ,  Hae Chan PARK ,  Myoung Sub KIM ,  Sung Bin HONG ,  Se Ho LEE ,  Jung Won SEO

IPC分类号： H01L45/00

CPC分类号： H01L45/1253 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1293 ,  H01L45/16 ,  H01L45/1683

摘要： A resistive memory device capable of preventing disturbance is provided. The resistive memory device includes a lower electrode formed on a semiconductor substrate, a variable resistor disposed on the lower electrode, an upper electrode disposed on the variable resistor, and an interlayer insulating layer configured to insulate the variable resistor. The interlayer insulating layer may include an air-gap area in at least a portion thereof.

摘要翻译： 提供能够防止干扰的电阻式存储装置。 电阻式存储器件包括形成在半导体衬底上的下电极，设置在下电极上的可变电阻器，设置在可变电阻器上的上电极以及被配置为使可变电阻器绝缘的层间绝缘层。 层间绝缘层的至少一部分中可以包括气隙区域。

公开(公告)号：US20180053779A1

公开(公告)日：2018-02-22

申请号：US15487761

申请日：2017-04-14

申请人： SK hynix Inc.

发明人： Hae Chan PARK ,  Jang Won KIM ,  Gong Hyun SA

IPC分类号： H01L27/11582 ,  H01L21/02 ,  H01L21/768 ,  H01L21/762 ,  H01L21/3213 ,  H01L29/49 ,  H01L21/28

CPC分类号： H01L27/11582 ,  H01L21/02636 ,  H01L21/762

摘要： A manufacturing method of a semiconductor device may be provided. The method may include forming stacks including interlayer insulating layers and separated by a slit, the interlayer insulating layers surrounding a channel layer and stacked to be spaced apart from one another with an interlayer space interposed therebetween. The method may include forming a conductive pattern filling the interlayer space. The method may include forming an isolation layer on a surface of the conductive pattern by oxidizing a portion of the conductive pattern by performing an oxidizing process.

公开(公告)号：US20160190439A1

公开(公告)日：2016-06-30

申请号：US14688717

申请日：2015-04-16

申请人： SK hynix Inc.

发明人： Sang Chul OH ,  Hae Chan PARK ,  Se Ho LEE

IPC分类号： H01L45/00

CPC分类号： H01L45/12 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675

摘要： A semiconductor integrated circuit device and a method of fabricating the same are disclosed. The semiconductor integrated circuit device includes a resistive layer and an encapsulation film formed to surround an outer wall of the resistive layer The encapsulation film contains an oxygen absorbing ingredient.

摘要翻译： 公开了一种半导体集成电路器件及其制造方法。 半导体集成电路器件包括电阻层和形成为围绕电阻层的外壁的封装膜。封装膜含有氧吸收成分。

公开(公告)号：US20160072059A1

公开(公告)日：2016-03-10

申请号：US14941208

申请日：2015-11-13

申请人： SK hynix Inc.

发明人： Jin Hyock KIM ,  Su Jin CHAE ,  Young Seok KWON ,  Hae Chan PARK

IPC分类号： H01L45/00 ,  G11C13/00

CPC分类号： H01L45/06 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/0092 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1683

摘要： A phase-change memory device including a phase-change region divided into multi layers and an operation method thereof are provided. The device includes a first phase-change layer to which a current is provided from a heating electrode, and a second phase-change layer formed with continuity to the first phase-change layer and having a different width from the first phase-change layer, and to which a current is provided from the heating electrode. The first and second phase-change layers include materials selected from a first group consisting of GeTe, GST415, GST315, GST225, GST124, GST147, and GST172 or a second group consisting of InSbSe, SnGeSe, GST, SnSbSe, and SiSbSe. The second phase-change layer includes a material different from the first phase-change layer, which is selected from the same group as the first phase-change layer and has smaller resistivity than the first phase-change layer.

摘要翻译： 提供一种包括分为多层的相变区域的相变存储器件及其操作方法。 该装置包括从加热电极提供电流的第一相变层和与第一相变层连续形成并且具有与第一相变层不同的宽度的第二相变层， 并且从加热电极提供电流。 第一和第二相变层包括从由GeTe，GST415，GST315，GST225，GST124，GST147和GST172组成的第一组中选择的材料或由InSbSe，SnGeSe，GST，SnSbSe和SiSbSe组成的第二组的材料。 第二相变层包括与第一相变层不同的材料，其选自与第一相变层相同的组，并且具有比第一相变层更小的电阻率。

公开(公告)号：US20150098264A1

公开(公告)日：2015-04-09

申请号：US14142363

申请日：2013-12-27

申请人： SK hynix Inc.

发明人： Hae Chan PARK

IPC分类号： G11C13/00

CPC分类号： G11C5/145 ,  G11C13/0002 ,  G11C13/0033 ,  G11C13/0038 ,  G11C13/0069

摘要： A resistive memory apparatus includes a memory unit including a resistive memory cell array, a voltage generation unit suitable for receiving a radio frequency (RF) signal, and converting the RF signal into a direct current (DC) voltage, and a control unit suitable for controlling a refresh operation to be performed on the resistive memory cell array, wherein the boosted DC voltage is used as an operation voltage for the refresh operation.

摘要翻译： 电阻式存储装置包括存储单元，该存储单元包括电阻式存储单元阵列，适于接收射频（RF）信号并将RF信号转换为直流（DC）电压的电压产生单元，以及适于 控制对电阻式存储单元阵列执行的刷新操作，其中升压的DC电压用作刷新操作的操作电压。

公开(公告)号：US20140209847A1

公开(公告)日：2014-07-31

申请号：US14242490

申请日：2014-04-01

申请人： SK hynix Inc.

发明人： Hae Chan PARK

IPC分类号： H01L27/24

CPC分类号： H01L27/2409 ,  H01L29/861 ,  H01L45/06

摘要： A phase-change memory device with an improved current characteristic is provided. The phase-change memory device includes a metal word line, a semiconductor layer of a first conductivity type being in contact with the metal word line, and an auxiliary diode layer being in contact with metal word line and the semiconductor layer.

摘要翻译： 提供了具有改善的电流特性的相变存储器件。 相变存储器件包括金属字线，与金属字线接触的第一导电类型的半导体层和与金属字线和半导体层接触的辅助二极管层。

公开(公告)号：US20160086663A1

公开(公告)日：2016-03-24

申请号：US14956823

申请日：2015-12-02

申请人： SK hynix Inc.

发明人： Seung Yun LEE ,  Hae Chan PARK ,  Myoung Sub KIM ,  Se Ho LEE

IPC分类号： G11C13/00

CPC分类号： G11C13/004 ,  G11C7/04 ,  G11C13/0004 ,  G11C13/0033 ,  G11C13/0038 ,  G11C2013/008

摘要： A semiconductor memory apparatus and a temperature control method thereof are provided. The semiconductor memory apparatus includes a temperature adjustment unit suitable for adjusting a temperature of a memory cell, and a temperature control unit suitable for sensing a temperature of the temperature adjustment unit, comparing a sensed temperature with a reference temperature range, and controlling the temperature adjustment unit to adjust the temperature thereof within the reference temperature range based on a comparison result.

摘要翻译： 提供半导体存储装置及其温度控制方法。 半导体存储装置包括适于调节存储单元的温度的温度调节单元，以及温度调节单元，其适于感测温度调节单元的温度，将感测温度与参考温度范围进行比较，并且控制温度调节 基于比较结果在基准温度范围内调节其温度。