公开(公告)号：US20180311764A1

公开(公告)日：2018-11-01

申请号：US16029828

申请日：2018-07-09

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Young-Hoo KIM ,  Il-Sang LEE ,  Yong-sun KO ,  Chang-Gil RYU ,  Kun-Tack LEE ,  Hyo-San LEE

IPC分类号： B23K26/146 ,  H01L21/687 ,  H01L21/67 ,  B08B3/10 ,  C11D11/00 ,  B08B7/00

CPC分类号： B23K26/146 ,  B08B3/10 ,  B08B7/0071 ,  C11D11/0047 ,  H01L21/67028 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/68785 ,  H01L21/68792

摘要： A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

公开(公告)号：US20180358242A1

公开(公告)日：2018-12-13

申请号：US15827144

申请日：2017-11-30

申请人： Samsung Electronics Co., Ltd.

发明人： Young-hoo Kim ,  Sang-jine PARK ,  Yong-jhin CHO ,  Yeon-jin GIL ,  Ji-hoon JEONG ,  Byung-kwon CHO ,  Yong-sun KO ,  Kun-tack LEE

IPC分类号： H01L21/67 ,  H01L21/687

CPC分类号： H01L21/67034 ,  H01L21/02101 ,  H01L21/67126 ,  H01L21/68735

摘要： A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

公开(公告)号：US20180254246A1

公开(公告)日：2018-09-06

申请号：US15697881

申请日：2017-09-07

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sang-jine PARK ,  Kee-sang KWON ,  Jae-jik BAEK ,  Yong-sun KO ,  Kwang-wook LEE

IPC分类号： H01L23/532 ,  H01L23/522 ,  H01L29/78 ,  H01L21/768 ,  H01L21/285

CPC分类号： H01L23/53204 ,  H01L21/28518 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76889 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53209 ,  H01L29/41791 ,  H01L29/785

摘要： An integrated circuit device includes an insulating film on a substrate, a lower wiring layer penetrating at least a portion of the insulating film, the lower wiring layer including a first metal, a lower conductive barrier film surrounding a bottom surface and a sidewall of the lower wiring layer, the lower conductive barrier film including a second metal different from the first metal, a first metal silicide capping layer covering a top surface of the lower wiring layer, the first metal silicide capping layer including the first metal, and a second metal silicide capping layer contacting the first metal silicide capping layer and disposed on the lower conductive barrier film, the second metal silicide capping layer including the second metal.

公开(公告)号：US20210217635A1

公开(公告)日：2021-07-15

申请号：US17215928

申请日：2021-03-29

申请人： Samsung Electronics Co., Ltd.

发明人： Young-hoo Kim ,  Sang-jine PARK ,  Yong-jhin CHO ,  Yeon-jin GIL ,  Ji-hoon JEONG ,  Byung-kwon CHO ,  Yong-sun KO ,  Kun-tack LEE

IPC分类号： H01L21/67 ,  H01L21/687

摘要： A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

公开(公告)号：US20160071745A1

公开(公告)日：2016-03-10

申请号：US14706546

申请日：2015-05-07

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Young-Hoo KIM ,  Il-Sang LEE ,  Yong-sun KO ,  Chang-Gil RYU ,  Kun-Tack LEE ,  Hyo-San LEE

IPC分类号： H01L21/67 ,  H01L21/683 ,  B23K26/146 ,  B08B3/08 ,  B08B7/00

CPC分类号： B23K26/146 ,  B08B3/10 ,  B08B7/0071 ,  C11D11/0047 ,  H01L21/67028 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/68785 ,  H01L21/68792

摘要： A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

摘要翻译： 提供点加热器和使用其的用于清洁晶片的装置。 晶片清洗装置包括加热器卡盘，其上安装有晶片，加热器卡盘构造成加热晶片的底面; 化学液体喷嘴，被配置为在所述晶片的顶表面上喷射化学液体以进行蚀刻; 以及点加热器，其被配置为加热晶片的顶表面的点。