公开(公告)号：US20140283886A1

公开(公告)日：2014-09-25

申请号：US14298304

申请日：2014-06-06

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yong-Jhin CHO ,  Kun-Tack LEE ,  Hyo-San LEE ,  Young-Hoo KIM ,  Jung-Won LEE ,  Sang-Won BAE ,  Jung-Min HO

IPC分类号： H01L21/67

CPC分类号： H01L21/67023 ,  B08B7/0021 ,  H01L21/0206 ,  H01L21/02104 ,  H01L21/31111 ,  H01L22/00 ,  H01L22/26 ,  H01L27/10852 ,  H01L28/90

摘要： In a supercritical fluid method a supercritical fluid is supplied into a process chamber. The supercritical fluid is discharged from the process chamber as a supercritical fluid process proceeds. A concentration of a target material included in the supercritical fluid discharged from the process chamber is detected during the supercritical fluid process. An end point of the supercritical fluid process may be determined based on a detected concentration of the target material.

摘要翻译： 在超临界流体法中，将超临界流体供应到处理室中。 当超临界流体处理进行时，超临界流体从处理室排出。 在超临界流体处理中检测从处理室排出的超临界流体中包含的目标材料的浓度。 超临界流体处理的终点可以基于检测到的目标材料的浓度来确定。

公开(公告)号：US20160071745A1

公开(公告)日：2016-03-10

申请号：US14706546

申请日：2015-05-07

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Young-Hoo KIM ,  Il-Sang LEE ,  Yong-sun KO ,  Chang-Gil RYU ,  Kun-Tack LEE ,  Hyo-San LEE

IPC分类号： H01L21/67 ,  H01L21/683 ,  B23K26/146 ,  B08B3/08 ,  B08B7/00

CPC分类号： B23K26/146 ,  B08B3/10 ,  B08B7/0071 ,  C11D11/0047 ,  H01L21/67028 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/68785 ,  H01L21/68792

摘要： A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

摘要翻译： 提供点加热器和使用其的用于清洁晶片的装置。 晶片清洗装置包括加热器卡盘，其上安装有晶片，加热器卡盘构造成加热晶片的底面; 化学液体喷嘴，被配置为在所述晶片的顶表面上喷射化学液体以进行蚀刻; 以及点加热器，其被配置为加热晶片的顶表面的点。

公开(公告)号：US20200286727A1

公开(公告)日：2020-09-10

申请号：US16881113

申请日：2020-05-22

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ji-Hoon JEONG ,  Jung-Min OH ,  Kun-Tack LEE ,  Hyo-San LEE

IPC分类号： H01L21/02 ,  H01L21/67

摘要： A method of processing substrates, comprising: loading a substrate into a process chamber; supplying a supercritical fluid, that is a process fluid under the supercritical state, into the process chamber, chemicals separated from the substrate and the supercritical fluid being mixed into a supercritical mixture in the process chamber; and gradually decreasing a chemical concentration of the supercritical mixture by alternately repeating a pressure drop mode and a supplemental mode such that the supercritical mixture partially flows out from the process chamber at the pressure drop mode when an inner pressure of the process chamber reaches a first pressure and the supercritical fluid turbulently flows into the process chamber at the supplemental mode when the inner pressure of the process chamber reaches a second pressure that is smaller than the first pressure and over a supercritical pressure of the process fluid.

公开(公告)号：US20190019669A1

公开(公告)日：2019-01-17

申请号：US16133789

申请日：2018-09-18

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ji-Hoon JEONG ,  Jung-Min OH ,  Kun-Tack LEE ,  Hyo-San LEE

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02041 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67017

摘要： Disclosed are an apparatus for treating a substrate and a method of treating substrates. The apparatus includes an inlet valve through which a supercritical fluid flows into the process chamber until an inner pressure of the process chamber reaches a first pressure and a turbulent flow generator turbulently supplementing the supercritical fluid into the process chamber until the inner pressure of the process chamber is recovered to the first pressure. A pressure drop module partially removes a supercritical mixture from the process chamber until the inner pressure of the process chamber is dropped to the second pressure. A pressure drop mode and a supplemental mode may be alternately repeated by the flow controller.

公开(公告)号：US20180311764A1

公开(公告)日：2018-11-01

申请号：US16029828

申请日：2018-07-09

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Young-Hoo KIM ,  Il-Sang LEE ,  Yong-sun KO ,  Chang-Gil RYU ,  Kun-Tack LEE ,  Hyo-San LEE

IPC分类号： B23K26/146 ,  H01L21/687 ,  H01L21/67 ,  B08B3/10 ,  C11D11/00 ,  B08B7/00

CPC分类号： B23K26/146 ,  B08B3/10 ,  B08B7/0071 ,  C11D11/0047 ,  H01L21/67028 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/68785 ,  H01L21/68792

摘要： A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.