公开(公告)号：US20150263172A1

公开(公告)日：2015-09-17

申请号：US14206373

申请日：2014-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Min CHO ,  Hyun-Jae Kang ,  Dong-Il Bae

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/10

CPC classification number: H01L29/0847 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device is provided. A substrate includes a fin. The fin extends in a first direction. A gate structure is disposed on a first region of the fin. The gate structure extends in a second direction crossing the first direction. A source/drain is disposed on a second region of the fin. The first source/drain is disposed on at least one sidewall of the gate structure. A top surface of the first region is lower than a top surface of the second region.

Abstract translation: 提供半导体器件。 衬底包括翅片。 翅片沿第一方向延伸。 栅极结构设置在鳍的第一区域上。 栅极结构沿与第一方向交叉的第二方向延伸。 源极/漏极设置在鳍片的第二区域上。 第一源极/漏极设置在栅极结构的至少一个侧壁上。 第一区域的顶表面低于第二区域的顶表面。

公开(公告)号：US20160133522A1

公开(公告)日：2016-05-12

申请号：US14539579

申请日：2014-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Jae KANG ,  Jin-Wook LEE ,  Kang-lll SEO ,  Yong-Min CHO

IPC: H01L21/8234 ,  H01L21/3213

CPC classification number: H01L27/0886 ,  G03F7/70 ,  H01L21/0274 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53271 ,  H01L27/0207

Abstract: Provided are a semiconductor device and a fabricating method thereof. The fabricating method includes forming first to fourth fins, each extending in a first direction, to be spaced apart in a second direction intersecting the first direction, forming first and second gate lines, each extending in the second direction, on the first to fourth fins to be spaced apart in the first direction, forming a first contact on the first gate line between the first and second fins, forming a second contact on the first gate line between the third and fourth fins, forming a third contact on the second gate line between the first and second fins, forming a fourth contact on the second gate line between the third and fourth fins and forming a fifth contact on the first to fourth contacts so as to overlap with the second contact and the third contact and so as not to overlap with the first contact and the fourth contact, wherein the fifth contact is arranged to diagonally traverse a quadrangle defined by the first to fourth contacts.

公开(公告)号：US20160276449A1

公开(公告)日：2016-09-22

申请号：US14662697

申请日：2015-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONG-IL BAE ,  Bomsoo KIM ,  Yong-Min CHO

IPC: H01L29/417 ,  H01L29/06 ,  H01L21/308 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78 ,  H01L29/45

CPC classification number: H01L29/41791 ,  H01L21/308 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

Abstract: An semiconductor device is provided. A fin is disposed on a substrate, extending in a lengthwise direction. A first recess is disposed on a sidewall of the fin so that the fin 7and the first recess is arranged in a straight line along the lengthwise direction. A gate structure crosses the fin in the first direction crossing the lengthwise direction. A spacer is disposed on sidewalk of the gate structure. A source/drain region is disposed in the first recess. The source/drain region is formed under the spacer. A silicide layer is disposed on the source/drain region. The silicide layer and the source/drain region fill the first recess.

Abstract translation: 提供半导体器件。 翅片设置在基板上，沿长度方向延伸。 第一凹部设置在翅片的侧壁上，使得翅片7和第一凹部沿着长度方向布置成直线。 栅极结构在与长度方向交叉的第一方向上跨越翅片。 间隔件设置在门结构的人行道上。 源极/漏极区域设置在第一凹部中。 源极/漏极区形成在间隔物下方。 硅化物层设置在源极/漏极区域上。 硅化物层和源/漏区填充第一凹槽。