公开(公告)号：US20240074303A1

公开(公告)日：2024-02-29

申请号：US18163504

申请日：2023-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonghyuk Kim ,  Taegon Kim ,  Shinae Jun ,  Hyeonho Choi ,  Seungyeon Kwak ,  Jiwhan Kim ,  Sunghun Lee

IPC: H10K85/30 ,  C09K11/02 ,  C09K11/06 ,  C09K11/08 ,  C09K11/88 ,  H10K50/115 ,  H10K50/12 ,  H10K59/10 ,  H10K85/60

CPC classification number: H10K85/346 ,  C09K11/02 ,  C09K11/06 ,  C09K11/0883 ,  C09K11/883 ,  H10K50/115 ,  H10K50/121 ,  H10K59/10 ,  H10K85/6572 ,  H10K85/658 ,  B82Y20/00

Abstract: A display apparatus, including a substrate including at least one blue light-emitting unit, and a color control portion provided on the substrate and configured to control a color of a light generated at the substrate, wherein the color control portion includes a first color control element, wherein the first color control element includes a first quantum dot for green light conversion, and the at least one blue light-emitting unit of the substrate includes an emission layer, wherein the emission layer includes a host, a first dopant, and a second dopant, and wherein the display apparatus further satisfies conditions as defined herein.

公开(公告)号：US11881508B2

公开(公告)日：2024-01-23

申请号：US17843105

申请日：2022-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungin Choi ,  Hyunchul Song ,  Sunjung Kim ,  Taegon Kim ,  Seong Hoon Jeong

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/3115 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H10B10/00 ,  H01L21/308 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/165 ,  H01L29/08

CPC classification number: H01L29/0653 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/3105 ,  H01L21/31155 ,  H01L21/76224 ,  H01L21/823828 ,  H01L21/823878 ,  H01L27/0924 ,  H01L29/0847 ,  H10B10/12 ,  H01L21/02208 ,  H01L21/308 ,  H01L21/823821 ,  H01L29/6656 ,  H01L29/66545

Abstract: A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.

公开(公告)号：US09553119B2

公开(公告)日：2017-01-24

申请号：US14849187

申请日：2015-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon-Young Choi ,  Taegon Kim ,  JunHyun Cho

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14698

Abstract: Methods of forming an image sensor are provided. A method of forming an image sensor includes forming a trench in a substrate to define a unit pixel region of the substrate. The method includes forming an in-situ-doped passivation layer on an exposed surface of the trench. The method includes forming a capping pattern on the in-situ-doped passivation layer, in the trench. The method includes forming a photoelectric conversion region in the unit pixel region. Moreover, the method includes forming a floating diffusion region in the unit pixel region.

Abstract translation: 提供了形成图像传感器的方法。 形成图像传感器的方法包括在衬底中形成沟槽以限定衬底的单位像素区域。 该方法包括在沟槽的暴露表面上形成原位掺杂的钝化层。 该方法包括在沟槽中的原位掺杂钝化层上形成封盖图案。 该方法包括在单位像素区域中形成光电转换区域。 此外，该方法包括在单位像素区域中形成浮动扩散区域。

公开(公告)号：US20160079288A1

公开(公告)日：2016-03-17

申请号：US14849187

申请日：2015-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon-Young Choi ,  Taegon Kim ,  JunHyun Cho

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14698

Abstract: Methods of forming an image sensor are provided. A method of forming an image sensor includes forming a trench in a substrate to define a unit pixel region of the substrate. The method includes forming an in-situ-doped passivation layer on an exposed surface of the trench. The method includes forming a capping pattern on the in-situ-doped passivation layer, in the trench. The method includes forming a photoelectric conversion region in the unit pixel region. Moreover, the method includes forming a floating diffusion region in the unit pixel region.

Abstract translation: 提供了形成图像传感器的方法。 形成图像传感器的方法包括在衬底中形成沟槽以限定衬底的单位像素区域。 该方法包括在沟槽的暴露表面上形成原位掺杂的钝化层。 该方法包括在沟槽中的原位掺杂钝化层上形成封盖图案。 该方法包括在单位像素区域中形成光电转换区域。 此外，该方法包括在单位像素区域中形成浮动扩散区域。

公开(公告)号：US20130171744A1

公开(公告)日：2013-07-04

申请号：US13715099

申请日：2012-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JONG-HOON KANG ,  Taegon Kim ,  Hanmei Choi ,  Eunyoung Jo ,  Gonsu Kang ,  Sungho Kang ,  Sungho Heo

IPC: H01L21/324

CPC classification number: H01L21/324 ,  H01L21/67115 ,  H01L21/67288 ,  H01L21/681 ,  H01L22/10 ,  H01L22/12 ,  H01L22/20

Abstract: A method of thermally treating a wafer includes loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient. A defect is detected in the wafer. The wafer is aligned to position the defect within one of the one or more regions of uniform temperature gradient. A rapid thermal process is performed on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.

Abstract translation: 一种热处理晶片的方法包括将晶片装载到具有一个或多个均匀温度梯度区域和一个或多个不均匀温度梯度区域的处理室中。 在晶片中检测到缺陷。 将晶片对准以将缺陷定位在均匀温度梯度的一个或多个区域之一内。 在处理室中的晶片上执行快速热处理，同时将缺陷定位在均匀温度梯度的一个或多个区域之一内。

公开(公告)号：US11322494B2

公开(公告)日：2022-05-03

申请号：US17015307

申请日：2020-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungin Choi ,  Taehyeon Kim ,  Hongshik Shin ,  Taegon Kim ,  Jaeyoung Park ,  Yuichiro Sasaki

IPC: H01L27/092 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L21/225 ,  H01L29/161 ,  H01L29/165 ,  H01L21/285

Abstract: A method of fabricating a semiconductor device includes pattering an upper portion of a substrate to form a first active pattern, the substrate including a semiconductor element having a first lattice constant, performing a selective epitaxial growth process on an upper portion of the first active pattern to form a first source/drain region, doping the first source/drain region with gallium, performing an annealing process on the first source/drain region doped with gallium, and forming a first contact pattern coupled to the first source/drain region. The first source/drain region includes a semiconductor element having a second lattice constant larger than the first lattice constant.

公开(公告)号：US11069753B2

公开(公告)日：2021-07-20

申请号：US16881444

申请日：2020-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiwhan Kim ,  Seungyeon Kwak ,  Jongsoo Kim ,  Taegon Kim ,  Sunghun Lee ,  Deukseok Chung

IPC: H01L27/32 ,  H01L51/52 ,  G02F1/017 ,  G02F1/1335 ,  G02F1/13357 ,  G02F2/02

Abstract: A display apparatus includes a light-source substrate portion which generates light; and a color control portion to which the generated light from the light-source substrate portion is incident and at which color of the generated light is adjusted to define a color-converted light having a color different from that of the generated light. The color control portion includes: an exit surface through which the color-converted light exits the color control portion; a substrate including a plurality of concave portions defined therein, each of the concave portions extended along a direction from the light-source substrate portion to the exit surface of the color control portion; and a plurality of color conversion members respectively in the plurality of concave portions, the color conversion members each including a color-converting material which converts the color of the generated light to the color of the color-converted light.

公开(公告)号：US10707275B2

公开(公告)日：2020-07-07

申请号：US16134014

申请日：2018-09-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiwhan Kim ,  Seungyeon Kwak ,  Jongsoo Kim ,  Taegon Kim ,  Sunghun Lee ,  Deukseok Chung

IPC: H01L27/32 ,  H01L51/52 ,  G02F2/02 ,  G02F1/13357 ,  G02F1/1335 ,  G02F1/017

Abstract: A display apparatus includes a light-source substrate portion which generates light; and a color control portion to which the generated light from the light-source substrate portion is incident and at which color of the generated light is adjusted to define a color-converted light having a color different from that of the generated light. The color control portion includes: an exit surface through which the color-converted light exits the color control portion; a substrate including a plurality of concave portions defined therein, each of the concave portions extended along a direction from the light-source substrate portion to the exit surface of the color control portion; and a plurality of color conversion members respectively in the plurality of concave portions, the color conversion members each including a color-converting material which converts the color of the generated light to the color of the color-converted light.

公开(公告)号：US10128376B2

公开(公告)日：2018-11-13

申请号：US15613955

申请日：2017-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungin Choi ,  Changhwa Kim ,  Taegon Kim ,  Hyunchul Song

IPC: H01L27/148 ,  H01L29/80 ,  H01L29/76 ,  H01L21/00 ,  H01L21/338 ,  H01L21/337 ,  H01L29/78 ,  H01L29/06

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation layer that defines an active region, an active fin vertically protruding from the active region of the substrate and extending in a horizontal direction, a gate structure traversing the active fin, and a source/drain contact on the active fin on a side of the gate structure. The gate structure may include a gate pattern and a capping pattern on the gate pattern, and the capping pattern may have impurities doped therein. The capping pattern may include a first part and a second part between the first part and the gate pattern. The first and second parts may have impurity concentrations different from each other.

公开(公告)号：US08854614B2

公开(公告)日：2014-10-07

申请号：US13715099

申请日：2012-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Hoon Kang ,  Taegon Kim ,  Hanmei Choi ,  Eunyoung Jo ,  Gonsu Kang ,  Sungho Kang ,  Sungho Heo

IPC: G01N21/00 ,  H01L21/66 ,  H01L21/68 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/324 ,  H01L21/67115 ,  H01L21/67288 ,  H01L21/681 ,  H01L22/10 ,  H01L22/12 ,  H01L22/20

Abstract: A method of thermally treating a wafer includes loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient. A defect is detected in the wafer. The wafer is aligned to position the defect within one of the one or more regions of uniform temperature gradient. A rapid thermal process is performed on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.

Abstract translation: 一种热处理晶片的方法包括将晶片装载到具有一个或多个均匀温度梯度区域和一个或多个不均匀温度梯度区域的处理室中。 在晶片中检测到缺陷。 将晶片对准以将缺陷定位在均匀温度梯度的一个或多个区域之一内。 在处理室中的晶片上执行快速热处理，同时将缺陷定位在均匀温度梯度的一个或多个区域之一内。