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公开(公告)号：US08854614B2
公开(公告)日：2014-10-07
申请号：US13715099
申请日：2012-12-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jong-Hoon Kang , Taegon Kim , Hanmei Choi , Eunyoung Jo , Gonsu Kang , Sungho Kang , Sungho Heo
IPC: G01N21/00 , H01L21/66 , H01L21/68 , H01L21/324 , H01L21/67
CPC classification number: H01L21/324 , H01L21/67115 , H01L21/67288 , H01L21/681 , H01L22/10 , H01L22/12 , H01L22/20
Abstract: A method of thermally treating a wafer includes loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient. A defect is detected in the wafer. The wafer is aligned to position the defect within one of the one or more regions of uniform temperature gradient. A rapid thermal process is performed on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.
Abstract translation: 一种热处理晶片的方法包括将晶片装载到具有一个或多个均匀温度梯度区域和一个或多个不均匀温度梯度区域的处理室中。 在晶片中检测到缺陷。 将晶片对准以将缺陷定位在均匀温度梯度的一个或多个区域之一内。 在处理室中的晶片上执行快速热处理，同时将缺陷定位在均匀温度梯度的一个或多个区域之一内。
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公开(公告)号：US20130171744A1
公开(公告)日：2013-07-04
申请号：US13715099
申请日：2012-12-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： JONG-HOON KANG , Taegon Kim , Hanmei Choi , Eunyoung Jo , Gonsu Kang , Sungho Kang , Sungho Heo
IPC: H01L21/324
CPC classification number: H01L21/324 , H01L21/67115 , H01L21/67288 , H01L21/681 , H01L22/10 , H01L22/12 , H01L22/20
Abstract: A method of thermally treating a wafer includes loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient. A defect is detected in the wafer. The wafer is aligned to position the defect within one of the one or more regions of uniform temperature gradient. A rapid thermal process is performed on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.
Abstract translation: 一种热处理晶片的方法包括将晶片装载到具有一个或多个均匀温度梯度区域和一个或多个不均匀温度梯度区域的处理室中。 在晶片中检测到缺陷。 将晶片对准以将缺陷定位在均匀温度梯度的一个或多个区域之一内。 在处理室中的晶片上执行快速热处理，同时将缺陷定位在均匀温度梯度的一个或多个区域之一内。
