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    Memory system and method of operating memory system using reconstructed data
    1.
    发明授权
    Memory system and method of operating memory system using reconstructed data 有权
    使用重构数据操作存储器系统的存储器系统和方法

    公开(公告)号：US09098391B2

    公开(公告)日：2015-08-04

    申请号：US14052834

    申请日：2013-10-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyun-Seuk Yoo ,  Jun-Jin Kong ,  Chang-Kyu Seol ,  Hong-Rak Son ,  Young-Geon Yoo

    IPC: G06F12/00 ,  G06F11/10 ,  G11C16/34 ,  G11C11/56 ,  G11C16/16 ,  G11C29/00 ,  G11C16/12 ,  G11C16/10

    CPC classification number: G06F12/00 ,  G06F11/10 ,  G06F11/1048 ,  G11C11/5628 ,  G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/3427 ,  G11C16/3454 ,  G11C29/00 ,  G11C2211/5648

    Abstract: Provided is a method of operating a memory system. The method includes programming first bit data into multiple memory cells; identifying target memory cells that are in a first state and have threshold voltages equal to or greater than a first voltage from the memory cells programmed with the first bit data; receiving second bit data which is to be programmed into the memory cells; calculating multiple third bit data by performing a first process on the second bit data; and selecting third bit data of the calculated multiple third bit data that changes a largest number of target memory cells from the first state to a second state when the memory cells are programmed with each of the multiple third bit data, respectively. The selected third bit data is programmed into the memory cells.

    Abstract translation: 提供了一种操作存储器系统的方法。 该方法包括将第一位数据编程到多个存储器单元中; 识别处于第一状态并且具有等于或大于来自由第一位数据编程的存储器单元的第一电压的阈值电压的目标存储器单元; 接收要编程到存储器单元中的第二位数据; 通过对所述第二位数据执行第一处理来计算多个第三位数据; 以及当所述存储器单元分别被所述多个第三位数据中的每一个编程时，选择将所述最大数目的目标存储单元从所述第一状态改变到第二状态的所计算的多个第三位数据的第三位数据。 所选择的第三位数据被编程到存储器单元中。

    Memory Device, Memory System, and Operating Method of Memory System
    2.
    发明申请
    Memory Device, Memory System, and Operating Method of Memory System 有权
    存储器件，存储器系统和存储器系统的操作方法

    公开(公告)号：US20150363335A1

    公开(公告)日：2015-12-17

    申请号：US14626989

    申请日：2015-02-20

    Applicant: SAMSUNG ELECTRONICS CO.,LTD.

    Inventor： Seong-Hyeog Choi ,  Jun-Jin Kong ,  Hong-Rak Son ,  Pil-Sang Yoon ,  Chang-Kyu Seol

    IPC: G06F12/14 ,  H04L9/32 ,  H04L9/08

    CPC classification number: G06F12/1408 ,  G06F2212/1052 ,  H04L9/3278

    Abstract: A memory device, a memory system, and an operating method of the memory system is provided. The operating method includes operations of transmitting an authentication request to a memory device using a memory controller; converting the authentication request to a first address using the memory device; processing authentication data that corresponds to the first address and indicates a physical characteristic of the memory device and transmitting the authentication data as an authentication response to the authentication request to the memory controller using the memory device; and verifying whether the authentication response received from the memory device is an authentication response to the authentication request using the memory controller.

    Abstract translation: 提供了存储器件，存储器系统以及存储器系统的操作方法。 操作方法包括使用存储器控制器将认证请求发送到存储器件的操作; 使用所述存储设备将所述认证请求转换为第一地址; 处理与第一地址相对应的认证数据，并指示存储器件的物理特征，并且使用存储器件将认证数据作为认证请求发送给存储器控制器; 以及验证从所述存储器装置接收到的认证响应是否是使用所述存储器控制器对所述认证请求的认证响应。

    Method of determining deterioration state of memory device and memory system using the same
    3.
    发明授权
    Method of determining deterioration state of memory device and memory system using the same 有权
    确定存储器件和使用其的存储器系统的劣化状态的方法

    公开(公告)号：US09164881B2

    公开(公告)日：2015-10-20

    申请号：US14052801

    申请日：2013-10-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chang-Kyu Seol ,  Jun-Jin Kong ,  Hong-Rak Son

    IPC: G06F3/00 ,  G06F13/00 ,  G06F12/00 ,  G06F11/00 ,  G11C29/00 ,  G11C29/50 ,  G06F11/10 ,  G11C16/34 ,  G11C11/56 ,  G06F11/34 ,  G11C16/26 ,  G11C29/04

    CPC classification number: G06F12/00 ,  G06F11/00 ,  G06F11/1048 ,  G06F11/3466 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C16/3418 ,  G11C16/3422 ,  G11C16/3427 ,  G11C16/349 ,  G11C29/00 ,  G11C29/50004 ,  G11C2029/0409

    Abstract: A method is provided for determining a deterioration condition of a memory device. The method includes calculating first information corresponding to a number of bits having a first logic value from data obtained by performing a first read operation on target storage region of the memory device using a first reference voltage as a read voltage, and calculating second information corresponding to a number of bits having a second logic value from data obtained by performing a second read operation on the target storage region using a second reference voltage as the read voltage. A deterioration condition of the target storage region is determined based on the first and second information. The first reference voltage is less than a first read voltage by which an erase state of the memory device is distinguished from an adjacent program state, and the second reference voltage is higher than the first read voltage.

    Abstract translation: 提供了一种用于确定存储器件的劣化状况的方法。 该方法包括：使用第一参考电压作为读取电压，通过对存储器件的目标存储区域执行第一读取操作获得的数据，计算与具有第一逻辑值的位数相对应的第一信息，并且计算对应于 具有来自通过使用第二参考电压作为读取电压对目标存储区域执行第二读取操作获得的数据的第二逻辑值的位数。 基于第一信息和第二信息确定目标存储区域的劣化条件。 第一参考电压小于第一读取电压，通过该第一读取电压将存储器件的擦除状态与相邻的程序状态区分开，并且第二参考电压高于第一读取电压。

    Apparatus that receives non-binary polar code and decoding method thereof
    7.
    发明授权
    Apparatus that receives non-binary polar code and decoding method thereof 有权

    公开(公告)号：US10742355B2

    公开(公告)日：2020-08-11

    申请号：US16566246

    申请日：2019-09-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae-Yong Son ,  Chang-Kyu Seol ,  Hong-Rak Son ,  Pil-Sang Yoon

    IPC: H04L1/00

    Abstract: An apparatus that receives a non-binary polar code through a channel includes a low-complexity decoder and a memory. The low-complexity decoder is configured to selectively calculate first common terms for input symbols in the non-binary polar code other than a first input symbol corresponding to a first target output symbol. The selective calculation uses a lower triangular kernel and log likelihood ratios of the input symbols generated based on a channel characteristic of the channel. The low-complexity decoder is also configured to calculate log likelihood ratios of the first target output symbol using the first common terms and to determine a value of the first target output symbol based on the log likelihood ratios of the first target output symbol. The memory is accessible by the low-complexity decoder and is configured to store the first common terms.

    Memory device, memory system, and operating method of memory system
    8.
    发明授权
    Memory device, memory system, and operating method of memory system 有权
    存储器件，存储器系统以及存储器系统的操作方法

    公开(公告)号：US09569371B2

    公开(公告)日：2017-02-14

    申请号：US14626989

    申请日：2015-02-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seong-Hyeog Choi ,  Jun-Jin Kong ,  Hong-Rak Son ,  Pil-Sang Yoon ,  Chang-Kyu Seol

    IPC: H04L29/06 ,  G06F12/14 ,  H04L9/32 ,  G06F11/30

    CPC classification number: G06F12/1408 ,  G06F2212/1052 ,  H04L9/3278

    Abstract: A memory device, a memory system, and an operating method of the memory system is provided. The operating method includes operations of transmitting an authentication request to a memory device using a memory controller; converting the authentication request to a first address using the memory device; processing authentication data that corresponds to the first address and indicates a physical characteristic of the memory device and transmitting the authentication data as an authentication response to the authentication request to the memory controller using the memory device; and verifying whether the authentication response received from the memory device is an authentication response to the authentication request using the memory controller.

    Abstract translation: 提供了存储器件，存储器系统以及存储器系统的操作方法。 操作方法包括使用存储器控制器将认证请求发送到存储器件的操作; 使用所述存储设备将所述认证请求转换为第一地址; 处理与第一地址相对应的认证数据，并指示存储器件的物理特征，并且使用存储器件将认证数据作为认证请求发送给存储器控制器; 以及验证从所述存储器装置接收到的认证响应是否是使用所述存储器控制器对所述认证请求的认证响应。

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