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公开(公告)号：US10566066B2
公开(公告)日：2020-02-18
申请号：US16421229
申请日：2019-05-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hye-Jeong So , Dong-Hwan Lee , Seong-Hyeog Choi , Eun-Chu Oh , Jun-Jin Kong , Hong-Rak Son , Pil-Sang Yoon
Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.
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公开(公告)号：US10438684B2
公开(公告)日：2019-10-08
申请号：US14696609
申请日：2015-04-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seong-Hyeog Choi , Jun-Jin Kong , Hong-Rak Son , Pil-Sang Yoon , Chang-Kyu Seol , Ki-Jun Lee
Abstract: A method of operating a memory system, having a non-volatile memory device, includes processing a response to a first request toward the memory device by using an original key, in response to the first request, generating and storing first parity data corresponding to the original key, and deleting the original key.
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公开(公告)号：US09761292B2
公开(公告)日：2017-09-12
申请号：US14693300
申请日：2015-04-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chang-Kyu Seol , Seong-Hyeog Choi , Jun-Jin Kong , Hong-Rak Son
CPC classification number: G11C7/24 , G06F11/1016 , G06F11/1044 , G06F11/1068 , G06F11/1072 , G06F12/0246 , G06F12/1425 , G06F21/31 , G06F2212/1052 , G06F2212/7201 , G09C1/00 , G11C29/50004 , G11C2029/0411 , G11C2029/5004 , H04L9/32 , H04L9/3278
Abstract: Provided are a flash memory device, a flash memory system, and methods of operating the same. A method of operating a flash memory system includes selecting memory cells of a flash memory in response to an authentication challenge, programming pieces of input data into the selected memory cells, respectively, reading the selected memory cells and generating and storing control information, dividing the selected memory cells into at least one first region memory cell and at least one second region memory cell based on the control information, and setting read values of the at least one first region memory cell and the at least one second region memory cell as a first value and a second value, respectively, and generating an authentication response in the response to the authentication challenge.
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Patent Agency Ranking
4.发明授权公开(公告)号：US09569371B2
公开(公告)日：2017-02-14
申请号：US14626989
申请日：2015-02-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seong-Hyeog Choi , Jun-Jin Kong , Hong-Rak Son , Pil-Sang Yoon , Chang-Kyu Seol
CPC classification number: G06F12/1408 , G06F2212/1052 , H04L9/3278
Abstract: A memory device, a memory system, and an operating method of the memory system is provided. The operating method includes operations of transmitting an authentication request to a memory device using a memory controller; converting the authentication request to a first address using the memory device; processing authentication data that corresponds to the first address and indicates a physical characteristic of the memory device and transmitting the authentication data as an authentication response to the authentication request to the memory controller using the memory device; and verifying whether the authentication response received from the memory device is an authentication response to the authentication request using the memory controller.
Abstract translation: 提供了存储器件，存储器系统以及存储器系统的操作方法。 操作方法包括使用存储器控制器将认证请求发送到存储器件的操作; 使用所述存储设备将所述认证请求转换为第一地址; 处理与第一地址相对应的认证数据，并指示存储器件的物理特征，并且使用存储器件将认证数据作为认证请求发送给存储器控制器; 以及验证从所述存储器装置接收到的认证响应是否是使用所述存储器控制器对所述认证请求的认证响应。
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5.发明授权Nonvolatile memory system, storage device and method for operating nonvolatile memory device 有权非易失性存储器系统，用于操作非易失性存储器件的存储设备和方法公开(公告)号：US09268531B1
公开(公告)日：2016-02-23
申请号：US14722751
申请日：2015-05-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seong-Hoon Woo , Hak-Sun Kim , Seong-Hyeog Choi , Jun-Jin Kong , Hong-Rak Son , Soon-Jae Won , Jung-Soo Chung
Abstract: A nonvolatile memory device includes a data generating unit for generating a first reference value randomly or pseudo-randomly according to a first program request to program data in a memory cell, a seed selecting unit for selecting at least one of a plurality of seeds using the first reference value, and a randomizer for generating randomized data by using the selected seed. The data generating unit regenerates the first reference value as a second reference value different from the first reference value when a second program request is made, and the seed selecting unit selects another seed using the second reference value.
Abstract translation: 非易失性存储器件包括：数据生成单元，用于根据第一程序请求随机地或随机地生成第一参考值，以对存储单元中的数据进行编程;种子选择单元，用于使用所述种子选择单元选择多个种子中的至少一个; 第一参考值，以及用于通过使用所选种子来生成随机数据的随机化器。 当进行第二程序请求时，数据生成单元将作为与第一参考值不同的第二参考值重新生成第一参考值，并且种子选择单元使用第二参考值选择另一种子。
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公开(公告)号：US10706944B2
公开(公告)日：2020-07-07
申请号：US16747790
申请日：2020-01-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hye-Jeong So , Dong-Hwan Lee , Seong-Hyeog Choi , Eun-Chu Oh , Jun-Jin Kong , Hong-Rak Son , Pil-Sang Yoon
Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.
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公开(公告)号：US10332606B2
公开(公告)日：2019-06-25
申请号：US15920485
申请日：2018-03-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hye-Jeong So , Dong-Hwan Lee , Seong-Hyeog Choi , Eun-Chu Oh , Jun-Jin Kong , Hong-Rak Son , Pil-Sang Yoon
Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.
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8.发明申请公开(公告)号：US20150363335A1
公开(公告)日：2015-12-17
申请号：US14626989
申请日：2015-02-20
Applicant: SAMSUNG ELECTRONICS CO.,LTD.
Inventor： Seong-Hyeog Choi , Jun-Jin Kong , Hong-Rak Son , Pil-Sang Yoon , Chang-Kyu Seol
CPC classification number: G06F12/1408 , G06F2212/1052 , H04L9/3278
Abstract: A memory device, a memory system, and an operating method of the memory system is provided. The operating method includes operations of transmitting an authentication request to a memory device using a memory controller; converting the authentication request to a first address using the memory device; processing authentication data that corresponds to the first address and indicates a physical characteristic of the memory device and transmitting the authentication data as an authentication response to the authentication request to the memory controller using the memory device; and verifying whether the authentication response received from the memory device is an authentication response to the authentication request using the memory controller.
Abstract translation: 提供了存储器件，存储器系统以及存储器系统的操作方法。 操作方法包括使用存储器控制器将认证请求发送到存储器件的操作; 使用所述存储设备将所述认证请求转换为第一地址; 处理与第一地址相对应的认证数据，并指示存储器件的物理特征，并且使用存储器件将认证数据作为认证请求发送给存储器控制器; 以及验证从所述存储器装置接收到的认证响应是否是使用所述存储器控制器对所述认证请求的认证响应。
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