公开(公告)号：US20170069608A1

公开(公告)日：2017-03-09

申请号：US15308287

申请日：2015-04-21

Applicant: Robert Bosch GmbH

Inventor： Walter Daves ,  Knut Alexander Kasper ,  Martin Rittner ,  Silvia Duernsteiner ,  Michael Guenther

IPC: H01L25/16 ,  H01L23/00 ,  H03K17/567 ,  H01L23/498

CPC classification number: H01L25/16 ,  H01L23/49833 ,  H01L23/49838 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/29139 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/8384 ,  H01L2924/0002 ,  H03K17/567 ,  H01L2924/00

Abstract: A commutation cell having at least one electrical capacitor, at least one controllable semiconductor switch and at least one semiconductor which is connected in series with the controllable semiconductor switch. The commutation cell has three circuit substrates situated in parallel with one another. The controllable semiconductor switch is connected in series with the semiconductor via a circuit substrate situated partially between the controllable semiconductor switch and the semiconductor, and the two remaining circuit substrates being connected to one another in an electrically conductive manner via a subassembly made up of the controllable semiconductor switch, the semiconductor and the circuit substrate situated partially between the controllable semiconductor switch and the semiconductor, the electrical capacitor being switched between the two remaining circuit substrates, separately from the subassembly.

Abstract translation: 一种具有至少一个电容器，至少一个可控半导体开关和至少一个与可控半导体开关串联连接的半导体的换向单元。 换向单元具有彼此平行设置的三个电路基板。 可控半导体开关经由部分位于可控半导体开关和半导体之间的电路基板与半导体串联连接，并且剩余的两个电路基板通过由可控制的半导体组件构成的子组件以导电方式彼此连接 半导体开关，半导体和电路基板部分地位于可控半导体开关和半导体之间，电容器在两个剩余的电路基板之间与子组件分开切换。

公开(公告)号：US20140234649A1

公开(公告)日：2014-08-21

申请号：US14348408

申请日：2012-09-21

Applicant: Robert Bosch GmbH

Inventor： Thomas Kalich ,  Frank Wetzl ,  Bernd Hohenberger ,  Rainer Holz ,  Christiane Frueh ,  Andreas Fix ,  Michael Guyenot ,  Andrea Feiock ,  Martin Rittner ,  Michael Guenther

IPC: B23K35/02 ,  B32B15/06 ,  B23K1/00 ,  B32B15/16

CPC classification number: B23K35/0238 ,  B23K1/0008 ,  B23K1/0016 ,  B32B15/06 ,  B32B15/16 ,  B32B2264/105 ,  C23C26/00 ,  C23C28/021 ,  C23C28/023 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/27334 ,  H01L2224/27505 ,  H01L2224/278 ,  H01L2224/27848 ,  H01L2224/29082 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29209 ,  H01L2224/29211 ,  H01L2224/29213 ,  H01L2224/29218 ,  H01L2224/29239 ,  H01L2224/29247 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29395 ,  H01L2224/32503 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/832 ,  H01L2224/83203 ,  H01L2224/83815 ,  H01L2224/8382 ,  H01L2224/8384 ,  H01L2924/01327 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/351 ,  H05K3/3478 ,  H05K2203/0405 ,  H05K2203/1131 ,  Y10T428/12049 ,  Y10T428/12063 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01049 ,  H01L2924/01013 ,  H01L2924/01031 ,  H01L2924/0132 ,  H01L2924/00

Abstract: The invention relates to a layered composite (10), in particular for connecting electronic components as joining partners, comprising at least one substrate film (11) and a layer assembly (12) applied to the substrate film. The layer assembly comprises at least one sinterable layer (13), which is applied to the substrate film (11) and which contains at least one metal powder, and a solder layer (14) applied to the sinterable layer (13). The invention further relates to a method for forming a layered composite, to a circuit assembly containing a layered composite (10) according to the invention, and to the use of a layered composite (10) in a joining method for electronic components.

Abstract translation: 本发明涉及一种分层复合材料（10），特别是用于连接作为接合伙伴的电子部件，包括至少一个基底膜（11）和施加到基底膜上的层组件（12）。 层组件包括施加到基底膜（11）并且包含至少一种金属粉末的至少一个可烧结层（13）和施加到可烧结层（13）的焊料层（14）。 本发明还涉及一种用于形成层状复合材料的方法，包括根据本发明的层状复合材料（10）的电路组件，以及在电子部件的接合方法中使用层状复合材料（10）。

公开(公告)号：US20190215969A1

公开(公告)日：2019-07-11

申请号：US16242692

申请日：2019-01-08

Applicant: Robert Bosch GmbH

Inventor： Heiner Jacobs ,  Martin Rittner ,  Ulrich Kessler

IPC: H05K3/30 ,  H05K1/18 ,  H01G4/228 ,  H01R12/58

Abstract: A contacting arrangement between an electrical component and a circuit carrier, the component being connected to a connection element formed as a part separate from the component, and the connection element being electroconductively contacted directly with the circuit carrier via at least one press-fit connection.

公开(公告)号：US09871025B2

公开(公告)日：2018-01-16

申请号：US15308287

申请日：2015-04-21

Applicant: Robert Bosch GmbH

Inventor： Walter Daves ,  Knut Alexander Kasper ,  Martin Rittner ,  Silvia Duernsteiner ,  Michael Guenther

IPC: H01L25/16 ,  H01L23/498 ,  H01L23/00 ,  H03K17/567

CPC classification number: H01L25/16 ,  H01L23/49833 ,  H01L23/49838 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/29139 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/8384 ,  H01L2924/0002 ,  H03K17/567 ,  H01L2924/00

Abstract: A commutation cell having at least one electrical capacitor, at least one controllable semiconductor switch and at least one semiconductor which is connected in series with the controllable semiconductor switch. The commutation cell has three circuit substrates situated in parallel with one another. The controllable semiconductor switch is connected in series with the semiconductor via a circuit substrate situated partially between the controllable semiconductor switch and the semiconductor, and the two remaining circuit substrates being connected to one another in an electrically conductive manner via a subassembly made up of the controllable semiconductor switch, the semiconductor and the circuit substrate situated partially between the controllable semiconductor switch and the semiconductor, the electrical capacitor being switched between the two remaining circuit substrates, separately from the subassembly.

公开(公告)号：US10991643B2

公开(公告)日：2021-04-27

申请号：US16470970

申请日：2017-12-11

Applicant: Robert Bosch GmbH

Inventor： Georg Hejtmann ,  Martin Rittner ,  Nicolas Maier ,  Uwe Glanz

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/29 ,  H01L23/34 ,  H01L23/00

Abstract: The invention relates to a power module. The power module has at least one power semiconductor and at least one further electronic component. The power module has a housing which is formed by a shaped body and is formed by an encapsulation compound. According to the invention, the housing is formed in at least two levels. At least one power semiconductor component is arranged in a first level and the at least one further electronic component is arranged in the second level. At least one electrically conductive layer, which forms an electrically conductive connecting structure, is formed on a surface of an inner boundary of the power module which extends between the levels. The connecting structure is applied directly to the surface. The at least one further electronic component is electrically conductively connected, in particular soldered or sintered, to the wiring structure. The power semiconductor component in the first level is electrically connected to the further component in the second level by means of the connecting structure.

公开(公告)号：US10667409B2

公开(公告)日：2020-05-26

申请号：US16242692

申请日：2019-01-08

Applicant: Robert Bosch GmbH

Inventor： Heiner Jacobs ,  Martin Rittner ,  Ulrich Kessler

IPC: H05K3/30 ,  H01G4/228 ,  H01R12/58 ,  H05K1/18

Abstract: A contacting arrangement between an electrical component and a circuit carrier, the component being connected to a connection element formed as a part separate from the component, and the connection element being electroconductively contacted directly with the circuit carrier via at least one press-fit connection.

公开(公告)号：US09630379B2

公开(公告)日：2017-04-25

申请号：US14348747

申请日：2012-09-21

Applicant: Robert Bosch GmbH

Inventor： Thomas Kalich ,  Christiane Frueh ,  Franz Wetzl ,  Bernd Hohenberger ,  Rainer Holz ,  Andreas Fix ,  Michael Guyenot ,  Andrea Feiock ,  Michael Guenther ,  Martin Rittner

IPC: B22F7/00 ,  B32B15/01 ,  B23K1/00 ,  B23K35/30 ,  B23K35/02 ,  H01L23/00 ,  B23K1/19 ,  B23K101/42

CPC classification number: B32B15/01 ,  B23K1/0006 ,  B23K1/0016 ,  B23K1/19 ,  B23K35/0238 ,  B23K35/30 ,  B23K2101/42 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2908 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29209 ,  H01L2224/29211 ,  H01L2224/29213 ,  H01L2224/29218 ,  H01L2224/29239 ,  H01L2224/29247 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8382 ,  H01L2924/01327 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15787 ,  Y10T428/12063 ,  Y10T428/12222 ,  H01L2924/00

Abstract: Laminated composite (10) comprising at least one electronic substrate (11) and an arrangement of layers (20, 30) made up of at least a first layer (20) of a first metal and/or a first metal alloy and of a second layer (30) of a second metal and/or a second metal alloy adjacent to this first layer (20), wherein the melting temperatures of the first and second layers are different, and wherein, after a thermal treatment of the arrangement of layers (20, 30), a region with at least one intermetallic phase (40) is formed between the first layer and the second layer, wherein the first layer (20) or the second layer (30) is formed by a reaction solder which consists of a mixture of a basic solder with an AgX, CuX or NiX alloy, wherein the component X of the AgX, CuX or NiX alloy is selected from the group consisting of B, Mg, Al, Si, Ca, Se, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Ag, In, Sn, Sb, Ba, Hf, Ta, W, Au, Bi, La, Ce, Pr, Nd, Gd, Dy, Sm, Er, Tb, Eu, Ho, Tm, Yb and Lu and wherein the melting temperature of the AgX, CuX or NiX alloy is greater than the melting temperature of the basic solder. The invention also relates to a method for forming a laminated composite (10) and to a circuit arrangement containing a laminated composite (10) according to the invention.

公开(公告)号：US20140248505A1

公开(公告)日：2014-09-04

申请号：US14348747

申请日：2012-09-21

Applicant: Robert Bosch GmbH

Inventor： Thomas Kalich ,  Christiane Frueh ,  Franz Wetzl ,  Bernd Hohenberger ,  Rainer Holz ,  Andreas Fix ,  Michael Guyenot ,  Andrea Feiock ,  Michael Guenther ,  Martin Rittner

IPC: B32B15/01 ,  B23K1/00

CPC classification number: B32B15/01 ,  B23K1/0006 ,  B23K1/0016 ,  B23K1/19 ,  B23K35/0238 ,  B23K35/30 ,  B23K2101/42 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2908 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29209 ,  H01L2224/29211 ,  H01L2224/29213 ,  H01L2224/29218 ,  H01L2224/29239 ,  H01L2224/29247 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8382 ,  H01L2924/01327 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15787 ,  Y10T428/12063 ,  Y10T428/12222 ,  H01L2924/00

Abstract: Laminated composite (10) comprising at least one electronic substrate (11) and an arrangement of layers (20, 30) made up of at least a first layer (20) of a first metal and/or a first metal alloy and of a second layer (30) of a second metal and/or a second metal alloy adjacent to this first layer (20), wherein the melting temperatures of the first and second layers are different, and wherein, after a thermal treatment of the arrangement of layers (20, 30), a region with at least one intermetallic phase (40) is formed between the first layer and the second layer, wherein the first layer (20) or the second layer (30) is formed by a reaction solder which consists of a mixture of a basic solder with an AgX, CuX or NiX alloy, wherein the component X of the AgX, CuX or NiX alloy is selected from the group consisting of B, Mg, Al, Si, Ca, Se, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Ag, In, Sn, Sb, Ba, Hf, Ta, W, Au, Bi, La, Ce, Pr, Nd, Gd, Dy, Sm, Er, Tb, Eu, Ho, Tm, Yb and Lu and wherein the melting temperature of the AgX, CuX or NiX alloy is greater than the melting temperature of the basic solder. The invention also relates to a method for forming a laminated composite (10) and to a circuit arrangement containing a laminated composite (10) according to the invention.

Abstract translation: 包括至少一个电子基板（11）和由至少第一金属和/或第一金属合金的第一层（20）和第二金属合金构成的层（20,30）的布置的层压复合材料（10） 与第一层（20）相邻的第二金属和/或第二金属合金的层（30），其中第一和第二层的熔化温度不同，并且其中在层的布置（ 20,30），在第一层和第二层之间形成具有至少一个金属间相（40）的区域，其中第一层（20）或第二层（30）由反应焊料形成，反应焊料由 碱性焊料与AgX，CuX或NiX合金的混合物，其中AgX，CuX或NiX合金的组分X选自B，Mg，Al，Si，Ca，Se，Ti，V， Cr，Mn，Fe，Co，Ni，Cu，Zn，Ga，Ge，Y，Zr，Nb，Mo，Ag，In，Sn，Sb，Ba，Hf，Ta，W，Au，Bi，La，Ce， Pr，Nd，Gd，Dy，Sm，Er，Tb，Eu，Ho，Tm，Yb等 Lu，其中AgX，CuX或NiX合金的熔融温度大于碱性焊料的熔融温度。 本发明还涉及层压复合材料（10）的形成方法和包含根据本发明的叠层复合材料（10）的电路装置。