公开(公告)号：US08492269B2

公开(公告)日：2013-07-23

申请号：US13234529

申请日：2011-09-16

Applicant: Jens Heinrich ,  Ralf Richter ,  Torsten Huisinga ,  Kai Frohberg

Inventor： Jens Heinrich ,  Ralf Richter ,  Torsten Huisinga ,  Kai Frohberg

IPC: H01L21/4763

CPC classification number: H01L21/76807 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53238 ,  H01L23/53257 ,  H01L27/10855 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In sophisticated semiconductor devices, superior contact resistivity may be accomplished for a given contact configuration by providing hybrid contact elements, at least a portion of which may be comprised of a highly conductive material, such as copper. To this end, a well-established contact material, such as tungsten, may be used as buffer material in order to preserve integrity of sensitive device areas upon depositing the highly conductive metal.

Abstract translation: 在复杂的半导体器件中，通过提供混合接触元件，对于给定的接触构型可以实现优异的接触电阻率，其中至少一部分可由高导电材料（例如铜）构成。 为此，可以使用诸如钨的良好接触材料作为缓冲材料，以便在沉积高导电性金属时保持敏感器件区域的完整性。

公开(公告)号：US08384161B2

公开(公告)日：2013-02-26

申请号：US12823438

申请日：2010-06-25

Applicant: Ralf Richter ,  Kai Frohberg ,  Holger Schuehrer

Inventor： Ralf Richter ,  Kai Frohberg ,  Holger Schuehrer

IPC: H01L27/092

CPC classification number: H01L23/485 ,  H01L21/76816 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823475 ,  H01L21/84 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

Abstract: By appropriately designing the geometric configuration of a contact level of a sophisticated semiconductor device, the tensile stress level of contact elements in N-channel transistors may be increased, while the tensile strain component of contact elements caused in the P-channel transistor may be reduced.

Abstract translation: 通过适当地设计复杂半导体器件的接触电平的几何形状，可以增加N沟道晶体管中的接触元件的拉伸应力水平，同时在P沟道晶体管中引起的接触元件的拉伸应变分量可能减小 。

公开(公告)号：US20110291292A1

公开(公告)日：2011-12-01

申请号：US13102411

申请日：2011-05-06

Applicant: Kai Frohberg ,  Ralf Richter ,  Torsten Huisinga ,  Katrin Reiche

Inventor： Kai Frohberg ,  Ralf Richter ,  Torsten Huisinga ,  Katrin Reiche

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L23/485 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823475 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In sophisticated semiconductor devices, the contact elements connecting to active semiconductor regions having formed thereabove closely spaced gate electrode structures may be provided on the basis of a liner material so as to reduce the lateral width of the contact opening, while, on the other hand, non-critical contact elements may be formed on the basis of non-reduced lateral dimensions. To this end, at least a first portion of the critical contact element is formed and provided with a liner material prior to forming the non-critical contact element.

Abstract translation: 在复杂的半导体器件中，可以基于衬垫材料提供连接到形成在其上方的紧密间隔的栅电极结构的有源半导体区域的接触元件，以便减小接触开口的横向宽度，而另一方面， 非临界接触元件可以基于非减小的横向尺寸形成。 为此，临界接触元件的至少第一部分形成并在形成非关键接触元件之前设置有衬垫材料。

公开(公告)号：US07871941B2

公开(公告)日：2011-01-18

申请号：US11743502

申请日：2007-05-02

Applicant: Kai Frohberg ,  Ralf Richter ,  Thomas Werner

Inventor： Kai Frohberg ,  Ralf Richter ,  Thomas Werner

IPC: H01L21/469

CPC classification number: H01L21/823807 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7843 ,  Y02P80/30

Abstract: By providing a silicon cap layer on a compressive silicon nitride layer, the diffusion of nitrogen into sensitive resist material may be efficiently reduced, while the silicon may be converted into a highly compressive silicon dioxide in a later manufacturing stage. Consequently, yield loss due to contact failures during the formation of semiconductor devices requiring differently stressed silicon nitride layers may be reduced.

Abstract translation: 通过在压缩氮化硅层上设置硅覆盖层，可以有效地降低氮气到敏感抗蚀剂材料中的扩散，同时可以在随后的制造阶段将硅转化为高度压缩的二氧化硅。 因此，可能会降低在形成需要不同应力的氮化硅层的半导体器件期间由于接触故障导致的屈服损失。

公开(公告)号：US08722511B2

公开(公告)日：2014-05-13

申请号：US13154754

申请日：2011-06-07

Applicant: Ralf Richter ,  Peter Javorka ,  Kai Frohberg

Inventor： Ralf Richter ,  Peter Javorka ,  Kai Frohberg

IPC: H01L21/76

CPC classification number: H01L23/485 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823878 ,  H01L29/7846 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Contact failures in sophisticated semiconductor devices may be reduced by relaxing the pronounced surface topography in isolation regions prior to depositing the interlayer dielectric material system. To this end, a deposition/etch sequence may be applied in which a fill material may be removed from the active region, while the recesses in the isolation regions may at least be partially filled.

Abstract translation: 复杂的半导体器件中的接触故障可以通过在沉积层间绝缘材料系统之前放宽隔离区域中显着的表面形貌来降低。 为此，可以施加沉积/蚀刻顺序，其中填充材料可以从有源区域移除，而隔离区域中的凹部可以至少部分地被填充。

公开(公告)号：US08536050B2

公开(公告)日：2013-09-17

申请号：US13102411

申请日：2011-05-06

Applicant: Kai Frohberg ,  Ralf Richter ,  Torsten Huisinga ,  Katrin Reiche

Inventor： Kai Frohberg ,  Ralf Richter ,  Torsten Huisinga ,  Katrin Reiche

IPC: H01L21/4763

CPC classification number: H01L23/485 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823475 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In sophisticated semiconductor devices, the contact elements connecting to active semiconductor regions having formed thereabove closely spaced gate electrode structures may be provided on the basis of a liner material so as to reduce the lateral width of the contact opening, while, on the other hand, non-critical contact elements may be formed on the basis of non-reduced lateral dimensions. To this end, at least a first portion of the critical contact element is formed and provided with a liner material prior to forming the non-critical contact element.

Abstract translation: 在复杂的半导体器件中，可以基于衬垫材料提供连接到形成在其上方的紧密间隔的栅电极结构的有源半导体区域的接触元件，以便减小接触开口的横向宽度，而另一方面， 非临界接触元件可以基于非减小的横向尺寸形成。 为此，临界接触元件的至少第一部分形成并在形成非关键接触元件之前设置有衬垫材料。

公开(公告)号：US08367504B2

公开(公告)日：2013-02-05

申请号：US12895116

申请日：2010-09-30

Applicant: Jens Heinrich ,  Ralf Richter ,  Kai Frohberg

Inventor： Jens Heinrich ,  Ralf Richter ,  Kai Frohberg

IPC: H01L21/336 ,  H01L21/8238 ,  H01L21/301 ,  H01L21/44

CPC classification number: H01L29/78 ,  H01L21/26506 ,  H01L21/823807 ,  H01L21/823814 ,  H01L23/5256 ,  H01L29/66545 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: In a replacement gate approach, the semiconductor material of the gate electrode structures may be efficiently removed during a wet chemical etch process, while this material may be substantially preserved in electronic fuses. Consequently, well-established semiconductor-based electronic fuses may be used instead of requiring sophisticated metal-based fuse structures. The etch selectivity of the semiconductor material may be modified on the basis of ion implantation or electron bombardment.

Abstract translation: 在替代栅极方法中，可以在湿式化学蚀刻工艺期间有效地去除栅电极结构的半导体材料，而这种材料可以基本上保存在电子熔丝中。 因此，可以使用成熟的基于半导体的电子熔丝而不需要复杂的金属基熔丝结构。 可以在离子注入或电子轰击的基础上修改半导体材料的蚀刻选择性。

公开(公告)号：US20120181692A1

公开(公告)日：2012-07-19

申请号：US13234529

申请日：2011-09-16

Applicant: Jens Heinrich ,  Ralf Richter ,  Torsten Huisinga ,  Kai Frohberg

Inventor： Jens Heinrich ,  Ralf Richter ,  Torsten Huisinga ,  Kai Frohberg

IPC: H01L23/485 ,  H01L21/768

CPC classification number: H01L21/76807 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53238 ,  H01L23/53257 ,  H01L27/10855 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In sophisticated semiconductor devices, superior contact resistivity may be accomplished for a given contact configuration by providing hybrid contact elements, at least a portion of which may be comprised of a highly conductive material, such as copper. To this end, a well-established contact material, such as tungsten, may be used as buffer material in order to preserve integrity of sensitive device areas upon depositing the highly conductive metal.

Abstract translation: 在复杂的半导体器件中，通过提供混合接触元件，对于给定的接触构型可以实现优异的接触电阻率，其中至少一部分可由高导电材料（例如铜）构成。 为此，可以使用诸如钨的良好接触材料作为缓冲材料，以便在沉积高导电性金属时保持敏感器件区域的完整性。

公开(公告)号：US20120025318A1

公开(公告)日：2012-02-02

申请号：US13154754

申请日：2011-06-07

Applicant: Ralf Richter ,  Peter Javorka ,  Kai Frohberg

Inventor： Ralf Richter ,  Peter Javorka ,  Kai Frohberg

IPC: H01L27/088 ,  H01L21/336

CPC classification number: H01L23/485 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823878 ,  H01L29/7846 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Contact failures in sophisticated semiconductor devices may be reduced by relaxing the pronounced surface topography in isolation regions prior to depositing the interlayer dielectric material system. To this end, a deposition/etch sequence may be applied in which a fill material may be removed from the active region, while the recesses in the isolation regions may at least be partially filled.

Abstract translation: 复杂的半导体器件中的接触故障可以通过在沉积层间绝缘材料系统之前放宽隔离区域中显着的表面形貌来降低。 为此，可以施加沉积/蚀刻顺序，其中填充材料可以从有源区域移除，而隔离区域中的凹部可以至少部分地被填充。

公开(公告)号：US20120001263A1

公开(公告)日：2012-01-05

申请号：US12970261

申请日：2010-12-16

Applicant: Ralf Richter ,  Kai Frohberg

Inventor： Ralf Richter ,  Kai Frohberg

IPC: H01L29/78 ,  H01L21/28

CPC classification number: H01L21/76837 ,  H01L21/31053 ,  H01L21/76819 ,  H01L29/7833 ,  Y02P80/30

Abstract: In replacement gate approaches for forming sophisticated high-k metal gate electrode structures in a late manufacturing stage, the exposing of the placeholder material may be accomplished on the basis of a substantially uniform interlayer dielectric material, for instance in the form of a silicon nitride material, which may have a similar removal rate compared to the dielectric cap material, the spacer elements and the like of the gate electrode structures. Consequently, a pronounced degree of recessing of the interlayer dielectric material may be avoided, thereby reducing the risk of forming metal residues upon removing any excess material of the gate metal.

Abstract translation: 在用于在后期制造阶段形成复杂的高k金属栅电极结构的替代栅极方法中，占位符材料的暴露可以基于基本均匀的层间电介质材料来实现，例如以氮化硅材料的形式 ，其可以具有与电介质盖材料相同的去除速率，栅电极结构的间隔元件等。 因此，可以避免层间绝缘材料的显着程度的凹陷，从而降低在去除栅极金属的多余材料时形成金属残留物的风险。