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189 条记录 (耗时 0.029 秒)

    Selective shrinkage of contact elements in a semiconductor device
    7.
    发明授权
    Selective shrinkage of contact elements in a semiconductor device 有权
    半导体器件中接触元件的选择性收缩

    公开(公告)号：US08536050B2

    公开(公告)日：2013-09-17

    申请号：US13102411

    申请日：2011-05-06

    申请人： Kai Frohberg ,  Ralf Richter ,  Torsten Huisinga ,  Katrin Reiche

    发明人： Kai Frohberg ,  Ralf Richter ,  Torsten Huisinga ,  Katrin Reiche

    IPC分类号： H01L21/4763

    CPC分类号： H01L23/485 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823475 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In sophisticated semiconductor devices, the contact elements connecting to active semiconductor regions having formed thereabove closely spaced gate electrode structures may be provided on the basis of a liner material so as to reduce the lateral width of the contact opening, while, on the other hand, non-critical contact elements may be formed on the basis of non-reduced lateral dimensions. To this end, at least a first portion of the critical contact element is formed and provided with a liner material prior to forming the non-critical contact element.

    摘要翻译： 在复杂的半导体器件中，可以基于衬垫材料提供连接到形成在其上方的紧密间隔的栅电极结构的有源半导体区域的接触元件，以便减小接触开口的横向宽度，而另一方面， 非临界接触元件可以基于非减小的横向尺寸形成。 为此，临界接触元件的至少第一部分形成并在形成非关键接触元件之前设置有衬垫材料。

    Replacement Gate Approach for High-K Metal Gate Stacks Based on a Non-Conformal Interlayer Dielectric
    9.
    发明申请
    Replacement Gate Approach for High-K Metal Gate Stacks Based on a Non-Conformal Interlayer Dielectric 审中-公开
    基于非保形层间介质的高K金属栅极堆叠的替代栅极方法

    公开(公告)号：US20120001263A1

    公开(公告)日：2012-01-05

    申请号：US12970261

    申请日：2010-12-16

    申请人： Ralf Richter ,  Kai Frohberg

    发明人： Ralf Richter ,  Kai Frohberg

    IPC分类号： H01L29/78 ,  H01L21/28

    CPC分类号： H01L21/76837 ,  H01L21/31053 ,  H01L21/76819 ,  H01L29/7833 ,  Y02P80/30

    摘要： In replacement gate approaches for forming sophisticated high-k metal gate electrode structures in a late manufacturing stage, the exposing of the placeholder material may be accomplished on the basis of a substantially uniform interlayer dielectric material, for instance in the form of a silicon nitride material, which may have a similar removal rate compared to the dielectric cap material, the spacer elements and the like of the gate electrode structures. Consequently, a pronounced degree of recessing of the interlayer dielectric material may be avoided, thereby reducing the risk of forming metal residues upon removing any excess material of the gate metal.

    摘要翻译： 在用于在后期制造阶段形成复杂的高k金属栅电极结构的替代栅极方法中，占位符材料的暴露可以基于基本均匀的层间电介质材料来实现，例如以氮化硅材料的形式 ，其可以具有与电介质盖材料相同的去除速率，栅电极结构的间隔元件等。 因此，可以避免层间绝缘材料的显着程度的凹陷，从而降低在去除栅极金属的多余材料时形成金属残留物的风险。

    Increased reliability for a contact structure to connect an active region with a polysilicon line
    10.
    发明授权
    Increased reliability for a contact structure to connect an active region with a polysilicon line 有权
    提高接触结构将有源区域与多晶硅线路连接的可靠性

    公开(公告)号：US07906815B2

    公开(公告)日：2011-03-15

    申请号：US12056362

    申请日：2008-03-27

    申请人： Carsten Peters ,  Ralf Richter ,  Kai Frohberg

    发明人： Carsten Peters ,  Ralf Richter ,  Kai Frohberg

    IPC分类号： H01L21/70

    CPC分类号： H01L23/485 ,  H01L21/28518 ,  H01L21/76889 ,  H01L21/76895 ,  H01L21/76897 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

    摘要： By forming a direct contact structure connecting, for instance, a polysilicon line with an active region on the basis of an increased amount of metal silicide by removing the sidewall spacers prior to the silicidation process, a significantly increased etch selectivity may be achieved during the contact etch stop layer opening. Hence, undue etching of the highly doped silicon material of the active region would be suppressed. Additionally or alternatively, an appropriately designed test structure is disclosed, which may enable the detection of electrical characteristics of contact structures formed in accordance with a specified manufacturing sequence and on the basis of specific design criteria.

    摘要翻译： 通过形成直接接触结构，例如通过在硅化处理之前去除侧壁间隔物，在增加量的金属硅化物的基础上连接有源区域，可以在接触期间实现显着增加的蚀刻选择性 蚀刻停止层开口。 因此，有效区域的高掺杂硅材料的过度蚀刻将被抑制。 附加地或替代地，公开了适当设计的测试结构，其可以检测根据特定制造顺序形成的接触结构的电特性，并且可以基于特定的设计标准。