Reductive amination for aldehyde neutralization
    3.
    发明授权
    Reductive amination for aldehyde neutralization 失效
    醛中和的还原胺化

    公开(公告)号:US06670520B2

    公开(公告)日:2003-12-30

    申请号:US09747230

    申请日:2000-12-22

    IPC分类号: A62D300

    摘要: Methods, compositions, and devices for alleviating the problems of toxic discharge of aldehydes present in waste streams are disclosed. The methods relate to reducing neutralized aldehydes wherein the neutalized aldehydes are formed by treating aldehydes with amino acids and thereinafter are reduced. These reduced, neutralized aldehydes do not revert back to toxic aldehydes, but form amino acids and thus allow waste containing aldehyde to be more environmentally safely disposed.

    摘要翻译: 公开了用于减轻存在于废物流中的醛的有毒排放问题的方法,组合物和装置。 所述方法涉及还原中和醛,其中通过用氨基酸处理醛形成中和醛,然后减少。 这些还原的中和醛不会回到有毒的醛类,而是形成氨基酸,从而允许含醛的废物更安全地处置环境。

    Electron beam column using high numerical aperture photocathode source illumination
    6.
    发明授权
    Electron beam column using high numerical aperture photocathode source illumination 失效
    电子束柱采用高数值孔径光电阴极源照明

    公开(公告)号:US06448568B1

    公开(公告)日:2002-09-10

    申请号:US09365604

    申请日:1999-07-30

    IPC分类号: H01J4006

    摘要: A lithography apparatus including both a laser beam source and an electron beam column, where the electron beam column has a support(in one embodiment a window in the column housing) having an index of refraction n. The support, having a photocathode source material disposed on its remote surface, is located in some embodiments such that the internal angle of the incident laser beam is &thgr; with respect to a line perpendicular to the remote surface. The numerical aperture of the substrate(equal to nsin &thgr;) is greater than one in one embodiment, resulting in a high resolution spot size diameter incident on the photocathode source material at the remote surface. Incident energy from the laser beam thereby emits a corresponding high resolution electron beam from the photocathode source material. Electromagnetic lens components are disposed downstream in the electron beam column to demagnify the electron beam. This apparatus allows the continuously decreasing minimum feature dimension sizes for semiconductor electron beam lithography.

    摘要翻译: 包括激光束源和电子束列的光刻设备,其中电子束柱具有折射率n的支撑(在一个实施例中为柱壳体中的窗口)。 具有设置在其远程表面上的光电阴极源材料的支撑件位于一些实施例中,使得入射激光束的内角相对于垂直于远程表面的线是θ。 在一个实施例中,衬底的数值孔径(等于nsinθ)大于一个,导致入射到远端表面的光电阴极源材料上的高分辨率光斑尺寸直径。 因此来自激光束的入射能量由此从光电阴极源材料发射出相应的高分辨率电子束。 电磁透镜部件设置在电子束列的下游,以使电子束缩小。 该装置允许连续减小用于半导体电子束光刻的最小特征尺寸尺寸。

    Methods and apparatus for integrating optical and interferometric lithography to produce complex patterns
    7.
    发明授权
    Methods and apparatus for integrating optical and interferometric lithography to produce complex patterns 有权
    用于整合光学和干涉光刻以产生复杂图案的方法和装置

    公开(公告)号:US06233044B1

    公开(公告)日:2001-05-15

    申请号:US09273399

    申请日:1999-03-22

    IPC分类号: G03B2754

    摘要: The present invention provides methods and apparatus for defining a single structure on a semiconductor wafer by spatial frequency components whereby some of the spatial frequency components are derived by optical lithography and some by interferometric lithographic techniques. Interferometric lithography images the high frequency components while optical lithography images the low frequency components. Optics collects many spatial frequencies and the interferometry shifts the spatial frequencies to high spatial frequencies. Thus, because the mask does not need to provide high spatial frequencies, the masks are configured to create only low frequency components, thereby allowing fabrication of simpler masks having larger structures. These methods and apparatus facilitate writing more complex repetitive as well as non-repetitive patterns in a single exposure with a resolution which is higher than that currently available using known optical lithography alone.

    摘要翻译: 本发明提供用于通过空间频率分量在半导体晶片上定义单个结构的方法和装置,由此通过光学光刻获得一些空间频率分量,而通过干涉光刻技术导出一些空间频率分量。 干涉光刻成像高频分量,而光刻成像低频分量。 光学收集许多空间频率,干涉测量将空间频率移动到高空间频率。 因此,由于掩模不需要提供高空间频率,所以掩模被配置为仅产生低频分量,从而允许制造具有较大结构的更简单的掩模。 这些方法和设备有助于在单次曝光中以比目前可用的已知光刻单独的分辨率更高的分辨率编写更复杂的重复和非重复图案。