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    Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth
    4.
    发明授权
    Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth 有权
    通过选择性外延生长制造垂直于（001）取向衬底的光学质量面

    公开(公告)号：US08841756B2

    公开(公告)日：2014-09-23

    申请号：US12200139

    申请日：2008-08-28

    Applicant: Seung-Chang Lee ,  Steven R. J. Brueck

    Inventor： Seung-Chang Lee ,  Steven R. J. Brueck

    IPC: H01L29/04 ,  H01L21/02 ,  H01L33/00 ,  H01S5/02

    CPC classification number: H01L21/02642 ,  H01L21/02373 ,  H01L21/02387 ,  H01L21/02433 ,  H01L21/02609 ,  H01L33/007 ,  H01S5/0205

    Abstract: Methods for forming {110} type facets on a (001) oriented substrate of Group III-V compounds and Group IV semiconductors using selective epitaxial growth is provided. The methods include forming a dielectric film on a (100) substrate. The dielectric film can then be patterned to expose a portion of the substrate and to form a substrate-dielectric film boundary substantially parallel to a direction. A {110} type sidewall facet can then be formed by epitaxially growing a semiconductor layer on the exposed portion of the substrate and the dielectric film.

    Abstract translation: 提供了使用选择性外延生长在III-V族化合物和IV族半导体的（001）取向衬底上形成{110}型面的方法。 所述方法包括在（100）衬底上形成电介质膜。 然后可以对电介质膜进行构图以暴露衬底的一部分并且形成基本上平行于<110>方向的衬底 - 电介质膜边界。 然后可以通过在衬底和电介质膜的暴露部分上外延生长半导体层来形成{110}型侧壁面。

    Large area patterning using interferometric lithography
    5.
    发明授权
    Large area patterning using interferometric lithography 有权
    使用干涉光刻的大面积图案

    公开(公告)号：US08685628B2

    公开(公告)日：2014-04-01

    申请号：US11739472

    申请日：2007-04-24

    Applicant: Alexander Raub ,  Andrew Frauenglass ,  Steven R. J. Brueck

    Inventor： Alexander Raub ,  Andrew Frauenglass ,  Steven R. J. Brueck

    IPC: G03H1/26

    CPC classification number: G02B6/1225 ,  B82Y20/00 ,  G02B6/02133 ,  G02B6/4204 ,  G02B2006/12107 ,  G03F7/70408

    Abstract: Exemplary embodiments provide methods for patterning large areas, beyond those accessible with the limited single-area exposure techniques, with nanometer scale features. The methods can include forming a grating pattern to make a first interferometric exposure of a first portion of a photosensitive material disposed over a substrate by interfering two or more laser beams, wherein the two or more laser beams comprise an apodized intensity profile having a continuous intensity variation. The method can further include aligning and overlapping the grating pattern to expose a second portion of the photosensitive material such that the first portion and the second portion form a continuous grating pattern.

    Abstract translation: 示例性实施例提供了利用纳米尺度特征对大面积图案进行图案化的方法，超出可用有限单面曝光技术访问的区域。 所述方法可以包括形成光栅图案，以通过干涉两个或更多个激光束对布置在基板上的感光材料的第一部分进行第一干涉曝光，其中两个或更多个激光束包括具有连续强度的变迹强度分布 变异。 该方法还可以包括对准和重叠光栅图案以暴露感光材料的第二部分，使得第一部分和第二部分形成连续的光栅图案。

    Nanostructured separation and analysis devices for biological membranes
    7.
    再颁专利
    Nanostructured separation and analysis devices for biological membranes 有权
    用于生物膜的纳米结构分离和分析装置

    公开(公告)号：USRE42315E1

    公开(公告)日：2011-05-03

    申请号：US11825298

    申请日：2007-07-05

    Applicant: Gabriel P. Lopez ,  Steven R. J. Brueck ,  Linnea K. Ista

    Inventor： Gabriel P. Lopez ,  Steven R. J. Brueck ,  Linnea K. Ista

    IPC: B01D15/34

    CPC classification number: G01N27/44773 ,  B82Y30/00 ,  G01N30/00 ,  G01N30/88 ,  G01N2030/8813 ,  Y10S977/717 ,  Y10S977/845 ,  Y10T436/25375 ,  Y10T436/255

    Abstract: The present invention provides a nanostructured device comprising a substrate including nanotroughs therein; and a lipid bilayer suspended on or supported in the substrate. A separation method is also provided comprising the steps of supporting or suspending a lipid bilayer on a substrate; wherein the substrate comprises nanostructures and wherein the lipid bilayer comprises at least one membrane associated biomolecule; and applying a driving force to the lipid bilayer to separate the membrane associated biomolecule from the lipid bilayer and to drive the membrane associated biomolecule into the nanostructures.

    Abstract translation: 本发明提供一种纳米结构装置，其包括其中包括纳沟的基板; 和悬浮在或支撑在基底中的脂质双层。 还提供了一种分离方法，包括以下步骤：在基质上支持或悬浮脂质双层; 其中所述底物包含纳米结构，并且其中所述脂质双层包含至少一个膜缔合的生物分子; 并将驱动力施加到脂质双层以将膜相关生物分子与脂质双层分离并将膜相关联的生物分子驱动到纳米结构中。

    FABRICATION OF ENCLOSED NANOCHANNELS USING SILICA NANOPARTICLES
    8.
    发明申请
    FABRICATION OF ENCLOSED NANOCHANNELS USING SILICA NANOPARTICLES 有权
    使用二氧化硅纳米粒子制备封装的纳米管

    公开(公告)号：US20110011794A1

    公开(公告)日：2011-01-20

    申请号：US12892427

    申请日：2010-09-28

    Applicant: Steven R. J. Brueck ,  Deying Xia

    Inventor： Steven R. J. Brueck ,  Deying Xia

    IPC: B01D69/04 ,  B05D5/00

    CPC classification number: B81C1/00071 ,  B82Y30/00 ,  Y10S977/78 ,  Y10S977/84 ,  Y10T137/0324 ,  Y10T137/3006 ,  Y10T137/8593

    Abstract: In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using interferometric lithography. The method can further include depositing a plurality of silica nanoparticles to form a structure over the pattern and removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises an enclosed nanochannel.

    Abstract translation: 根据本发明，存在一种形成纳米通道的方法，其包括在衬底上沉积感光膜堆叠并且使用干涉光刻在膜堆上形成图案。 该方法可以进一步包括沉积多个二氧化硅纳米颗粒以在图案上形成结构并除去图案，同时保留由多个二氧化硅纳米颗粒形成的结构，其中该结构包括封闭的纳米通道。

    FABRICATION OF OPTICAL-QUALITY FACETS VERTICAL TO A (001) ORIENTATION SUBSTRATE BY SELECTIVE EPITAXIAL GROWTH
    9.
    发明申请
    FABRICATION OF OPTICAL-QUALITY FACETS VERTICAL TO A (001) ORIENTATION SUBSTRATE BY SELECTIVE EPITAXIAL GROWTH 有权
    通过选择性外延生长垂直于A（001）方位基板的光学质量面的制造

    公开(公告)号：US20080315370A1

    公开(公告)日：2008-12-25

    申请号：US12200139

    申请日：2008-08-28

    Applicant: Seung-Chang Lee ,  Steven R. J. Brueck

    Inventor： Seung-Chang Lee ,  Steven R. J. Brueck

    IPC: H01L29/04

    CPC classification number: H01L21/02642 ,  H01L21/02373 ,  H01L21/02387 ,  H01L21/02433 ,  H01L21/02609 ,  H01L33/007 ,  H01S5/0205

    Abstract: Methods for forming {110} type facets on a (001) oriented substrate of Group III-V compounds and Group IV semiconductors using selective epitaxial growth is provided. The methods include forming a dielectric film on a (100) substrate. The dielectric film can then be patterned to expose a portion of the substrate and to form a substrate-dielectric film boundary substantially parallel to a direction. A {110} type sidewall facet can then be formed by epitaxially growing a semiconductor layer on the exposed portion of the substrate and the dielectric film.

    Abstract translation: 提供了使用选择性外延生长在III-V族化合物和IV族半导体的（001）取向衬底上形成{110}型面的方法。 所述方法包括在（100）衬底上形成电介质膜。 然后可以对电介质膜进行构图以暴露衬底的一部分并且形成基本上平行于<110>方向的衬底 - 电介质膜边界。 然后可以通过在衬底和电介质膜的暴露部分上外延生长半导体层来形成{110}型侧壁面。

    Generalized transverse bragg waveguide
    10.
    发明授权
    Generalized transverse bragg waveguide 有权
    广义横向布拉格波导

    公开(公告)号：US07327924B2

    公开(公告)日：2008-02-05

    申请号：US11231812

    申请日：2005-09-22

    Applicant: Steven R. J. Brueck ,  David B. Burckel

    Inventor： Steven R. J. Brueck ,  David B. Burckel

    IPC: G02B6/10

    CPC classification number: G02B6/023 ,  G02B6/10 ,  G02B6/122

    Abstract: According to various embodiments, the present teachings relate to Generalized Transverse Bragg Waveguides (GTBW) that can include an a dielectric core having an index of refraction n1 and an optical axis. The optical waveguide can further include a media having an index of refraction n2 bounding a top surface and a bottom surface of the dielectric core, wherein n2

    Abstract translation: 根据各种实施例，本教导涉及广义横向布拉格波导（GTBW），其可以包括具有折射率n 1和光轴的介质芯。 光波导还可以包括具有包围电介质芯的顶表面和底表面的折射率n 2的介质，其中n 2 1 。 光波导还可以包括界定介电芯的第一侧的第一电介质包层，其中第一电介质包层具有第一周期性空间变化的折射率，以及界定介电芯的第二侧的第二电介质包层，其中， 第二介电包层具有第二周期性空间变化的折射率。 第一周期性空间变化的折射率的方向和第二周期性空间变化的折射率的方向可以处于与光轴正交或平行的角度。

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