Exemplary embodiments provide methods for patterning large areas, beyond those accessible with the limited single-area exposure techniques, with nanometer scale features. The methods can include forming a grating pattern to make a first interferometric exposure of a first portion of a photosensitive material disposed over a substrate by interfering two or more laser beams, wherein the two or more laser beams comprise an apodized intensity profile having a continuous intensity variation. The method can further include aligning and overlapping the grating pattern to expose a second portion of the photosensitive material such that the first portion and the second portion form a continuous grating pattern.