公开(公告)号：USD938925S1

公开(公告)日：2021-12-21

申请号：US29710616

申请日：2019-10-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Designer： Ryosuke Okawa ,  Toshikazu Imai ,  Kazuma Yoshida ,  Tsubasa Inoue ,  Takeshi Imamura

公开(公告)号：US11201017B2

公开(公告)日：2021-12-14

申请号：US16525027

申请日：2019-07-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takeshi Imamura ,  Toshihisa Miura

IPC: H01G13/00 ,  H01G4/224 ,  H01G4/236 ,  H01G4/33

Abstract: A method for manufacturing a capacitor includes a step of forming a case integrated with a terminal unit designed to be connected with an external terminal, and a step of housing a capacitor element in the case so that the terminal unit is electrically connected to the capacitor element. The step of forming the case includes heating a metal mold to a temperature less than or equal to a glass transition temperature of a thermoplastic resin that is a material for the case. The metal mold internally has a mold part that is a hollow part having a shape of the case. And the step of forming the case further includes, after the heating of the metal mold and inserting the terminal unit into the mold part, injecting the thermoplastic resin in a molten state into the mold part of the metal mold.

公开(公告)号：USD934820S1

公开(公告)日：2021-11-02

申请号：US29710622

申请日：2019-10-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Designer： Ryosuke Okawa ,  Toshikazu Imai ,  Kazuma Yoshida ,  Tsubasa Inoue ,  Takeshi Imamura

公开(公告)号：US12027318B2

公开(公告)日：2024-07-02

申请号：US17695227

申请日：2022-03-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshiki Kamimura ,  Takeshi Imamura ,  Akihiro Morikawa ,  Wataru Tamura

IPC: H01G4/228 ,  H01G2/10 ,  H01G4/224 ,  H01G4/38

CPC classification number: H01G4/228 ,  H01G2/106 ,  H01G4/224 ,  H01G4/38

Abstract: A capacitor includes a bus bar. The bus bar includes a bus bar body member and a terminal formation member configured to be superposed on and fixed to a terminal formation part of the bus bar body member. In the terminal formation part, a plurality of first connection terminal parts are formed so as to be arranged in one direction, by portions of the terminal formation part being cut and raised. In the terminal formation member, a plurality of second connection terminal parts are formed so as to be arranged in one direction, by portions of the terminal formation member being cut and raised, and second openings are formed in places where the portions have been cut and raised. The first connection terminal parts and the second connection terminal parts are alternately arranged in one direction, by the first connection terminal parts being passed through the second openings.

公开(公告)号：US10811189B2

公开(公告)日：2020-10-20

申请号：US16052200

申请日：2018-08-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takeshi Imamura ,  Toshihisa Miura ,  Eriko Kanatani

IPC: H01G4/228 ,  H01G4/224 ,  H01G4/38 ,  H01G2/04 ,  H01G4/40 ,  H01G2/10 ,  H01G4/33 ,  H01G4/18

Abstract: A rear bus bar includes a rear electrode connecting part connected to an upper end electrode of a capacitor element, and a rear overlapping part is led out upward from a rear electrode connecting part at a position overlapping with the upper end electrode. A front bus bar includes a front electrode connecting part connected to a lower end electrode of the capacitor element, a first relay part, and a second relay part extending along the upper end electrode, and a front overlapping part is led out upward from the second relay part. An insulation module includes a first insulating part interposed between the front overlapping part and the rear overlapping part, and a second insulating part interposed between the upper end electrode and the second relay part.

公开(公告)号：US10340347B1

公开(公告)日：2019-07-02

申请号：US16146272

申请日：2018-09-28

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Kazuma Yoshida ,  Takeshi Imamura ,  Toshikazu Imai ,  Ryosuke Okawa ,  Ryou Kato

IPC: H01L29/417 ,  H01L23/00 ,  H01L27/088 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/41775 ,  H01L23/562 ,  H01L27/088 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/7827

Abstract: A semiconductor device includes a first gate electrode, a plurality of first source electrodes, a second gate electrode, and a plurality of second source electrodes. The first gate electrode is arranged with no other electrode between the first gate electrode and a first short side of the semiconductor substrate. The plurality of first source electrodes include a plurality of approximately rectangular first source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate. The second gate electrode is arranged with no other electrode between the second gate electrode and a second short side of the semiconductor substrate. The plurality of second source electrodes include a plurality of approximately rectangular second source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate.

公开(公告)号：USD813182S1

公开(公告)日：2018-03-20

申请号：US29592124

申请日：2017-01-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Designer： Toshikazu Imai ,  Ryosuke Okawa ,  Eiji Yasuda ,  Takeshi Imamura ,  Kazuma Yoshida ,  Shigetoshi Sota

公开(公告)号：US10541310B2

公开(公告)日：2020-01-21

申请号：US16418617

申请日：2019-05-21

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Kazuma Yoshida ,  Takeshi Imamura ,  Toshikazu Imai ,  Ryosuke Okawa ,  Ryou Kato

IPC: H01L29/417 ,  H01L29/78 ,  H01L27/088 ,  H01L23/00 ,  H01L29/423

Abstract: A semiconductor device includes a first gate electrode, a plurality of first source electrodes, a second gate electrode, and a plurality of second source electrodes. The first gate electrode is arranged with no other electrode between the first gate electrode and a first short side of the semiconductor substrate. The plurality of first source electrodes include a plurality of approximately rectangular first source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate. The second gate electrode is arranged with no other electrode between the second gate electrode and a second short side of the semiconductor substrate. The plurality of second source electrodes include a plurality of approximately rectangular second source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate.

公开(公告)号：US20190157403A1

公开(公告)日：2019-05-23

申请号：US16261232

申请日：2019-01-29

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Eiji Yasuda ,  Toshikazu Imai ,  Ryosuke Okawa ,  Takeshi Imamura ,  Mitsuaki Sakamoto ,  Kazuma Yoshida ,  Masaaki Hirako ,  Yasuyuki Masumoto ,  Shigetoshi Sota ,  Tomonari Oota

IPC: H01L29/417 ,  H01L29/36 ,  H01L29/78 ,  H01L27/088 ,  H01L23/498 ,  H01L23/13 ,  H01L29/45 ,  H01L23/00

Abstract: A semiconductor device includes a semiconductor substrate including a first conductivity-type impurity, a low-concentration impurity layer including a first conductivity-type impurity having a concentration lower than a concentration of the first conductivity-type impurity in the semiconductor substrate, a backside electrode including a metal material, and first and second transistors in the low-concentration impurity layer. The first transistor includes a first source electrode and a first gate electrode on a surface of the low-concentration impurity layer, the second transistor includes a second source electrode and a second gate electrode on the surface of the low-concentration impurity layer. The semiconductor substrate serves as a common drain region of the transistors. The thickness of the backside electrode ranges from 25 to 35 μm, and the ratio of the thickness of the backside electrode to the thickness of a semiconductor layer including the semiconductor substrate and the low-concentration impurity layer is 0.32 or more.