公开(公告)号：US09837435B1

公开(公告)日：2017-12-05

申请号：US15461478

申请日：2017-03-17

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chun-Yen Chang ,  Chun-Hu Cheng ,  Wei Lin ,  Yu-Chien Chiu ,  Chien Liu

IPC: H01L27/00 ,  H01L27/11582 ,  H01L29/792 ,  H01L27/11568 ,  H01L29/10 ,  H01L27/11551 ,  H01L21/822 ,  H01L27/11578 ,  H01L27/06 ,  H01L27/11502

CPC classification number: H01L27/11582 ,  G11C11/22 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/11502 ,  H01L27/11551 ,  H01L27/11568 ,  H01L27/11578 ,  H01L29/1037 ,  H01L29/7926

Abstract: A three-dimensional non-volatile memory structure including a substrate, a stacked structure, a charge storage pillar, a channel pillar, and a ferroelectric material pillar is provided. The stacked structure is disposed on the substrate and includes a plurality of conductive layers and a plurality of first dielectric layers, and the conductive layers and the first dielectric layers are alternately stacked. The charge storage pillar is disposed in the stacked structure. The channel pillar is disposed inside the charge storage pillar. The ferroelectric material pillar is disposed inside the channel pillar.

公开(公告)号：US20140047160A1

公开(公告)日：2014-02-13

申请号：US13653424

申请日：2012-10-17

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei Lin ,  Kuo-Yi Cheng ,  Chun-Yen Chang

IPC: G06F12/02 ,  G11C16/10

CPC classification number: G11C16/10 ,  G11C7/00 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/0466 ,  G11C16/3468 ,  G11C16/3495 ,  G11C2211/5621

Abstract: A data writing method for writing data into a memory cell of a rewritable non-volatile memory module, and a memory controller and a memory storage apparatus using the same area provided. The method includes recording a wear degree of the memory cell and adjusting an initial write voltage and a write voltage pulse time corresponding to the memory cell based on the wear degree thereof. The method further includes programming the memory cell by applying the initial write voltage and the write voltage pulse time, thereby writing the data into the memory cell. Accordingly, data can be accurately stored into the rewritable non-volatile memory module by the method.

Abstract translation: 一种用于将数据写入可重写非易失性存储器模块的存储单元的数据写入方法，以及使用相同区域的存储器控​​制器和存储器存储装置。 该方法包括记录存储单元的磨损程度，并且基于其磨损程度调整对应于存储单元的初始写入电压和写入电压脉冲时间。 该方法还包括通过施加初始写入电压和写入电压脉冲时间对存储器单元进行编程，从而将数据写入存储单元。 因此，可以通过该方法将数据精确地存储到可重写非易失性存储器模块中。

公开(公告)号：US20140325118A1

公开(公告)日：2014-10-30

申请号：US13935572

申请日：2013-07-05

Applicant: Phison Electronics Corp.

Inventor： Kuo-Yi Cheng ,  Wei Lin ,  Kim-Hon Wong ,  Hao-Zhi Lee ,  Hung-Chun Lin ,  Chun-Yen Chang

IPC: G06F12/02

CPC classification number: G06F12/0246 ,  G06F2212/7202 ,  G11C7/04 ,  G11C11/5628 ,  G11C29/82

Abstract: A data writing method for writing data into a physical erasing unit and a memory controller and a memory storage apparatus using the data writing method are provided. The method includes dividing the data into a plurality of information frames in a unit of one physical programming unit. The method also includes writing the information frames in sequence into at least one physical programming unit constituted by memory cells disposed on at least one first word line and programming the storage state of memory cells disposed on at least one second word line following the first word line to an auxiliary pattern. Accordingly, the method effectively prevents data stored in the physical erasing unit, which is not full of data, from being lost due to a high temperature.

Abstract translation: 提供了一种用于将数据写入物理擦除单元和存储器控制器以及使用数据写入方法的存储器装置的数据写入方法。 该方法包括以一个物理编程单元为单位将数据划分成多个信息帧。 该方法还包括将信息帧顺序地写入至少一个物理编程单元，该物理编程单元由设置在至少一个第一字线上的存储单元构成，并且对位于第一字线之后的至少一个第二字线上的存储单元的存储状态进行编程 到辅助模式。 因此，该方法有效地防止存储在不充满数据的物理擦除单元中的数据由于高温而丢失。

公开(公告)号：US09703698B2

公开(公告)日：2017-07-11

申请号：US13935572

申请日：2013-07-05

Applicant: PHISON ELECTRONICS CORP.

Inventor： Kuo-Yi Cheng ,  Wei Lin ,  Kim-Hon Wong ,  Hao-Zhi Lee ,  Hung-Chun Lin ,  Chun-Yen Chang

IPC: G06F12/00 ,  G06F12/02 ,  G11C11/56 ,  G11C29/00 ,  G11C7/04

CPC classification number: G06F12/0246 ,  G06F2212/7202 ,  G11C7/04 ,  G11C11/5628 ,  G11C29/82

Abstract: A data writing method for writing data into a physical erasing unit and a memory controller and a memory storage apparatus using the data writing method are provided. The method includes dividing the data into a plurality of information frames in a unit of one physical programming unit. The method also includes writing the information frames in sequence into at least one physical programming unit constituted by memory cells disposed on at least one first word line and programming the storage state of memory cells disposed on at least one second word line following the first word line to an auxiliary pattern. Accordingly, the method effectively prevents data stored in the physical erasing unit, which is not full of data, from being lost due to a high temperature.

公开(公告)号：US08737126B2

公开(公告)日：2014-05-27

申请号：US13653424

申请日：2012-10-17

Applicant: Phison Electronics Corp.

Inventor： Wei Lin ,  Kuo-Yi Cheng ,  Chun-Yen Chang

IPC: G11C11/34 ,  G11C16/04 ,  G11C16/10 ,  G11C7/00

CPC classification number: G11C16/10 ,  G11C7/00 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/0466 ,  G11C16/3468 ,  G11C16/3495 ,  G11C2211/5621

Abstract: A data writing method for writing data into a memory cell of a rewritable non-volatile memory module, and a memory controller and a memory storage apparatus using the same area provided. The method includes recording a wear degree of the memory cell and adjusting an initial write voltage and a write voltage pulse time corresponding to the memory cell based on the wear degree thereof. The method further includes programming the memory cell by applying the initial write voltage and the write voltage pulse time, thereby writing the data into the memory cell. Accordingly, data can be accurately stored into the rewritable non-volatile memory module by the method.

Abstract translation: 一种用于将数据写入可重写非易失性存储器模块的存储单元的数据写入方法，以及使用相同区域的存储器控​​制器和存储器存储装置。 该方法包括记录存储单元的磨损程度，并且基于其磨损程度调整对应于存储单元的初始写入电压和写入电压脉冲时间。 该方法还包括通过施加初始写入电压和写入电压脉冲时间对存储器单元进行编程，从而将数据写入存储单元。 因此，可以通过该方法将数据精确地存储到可重写非易失性存储器模块中。

公开(公告)号：US09007829B2

公开(公告)日：2015-04-14

申请号：US13778055

申请日：2013-02-26

Applicant: Phison Electronics Corp.

Inventor： Wei Lin ,  Yu-Cheng Hsu ,  Kuo-Yi Cheng ,  Chun-Yen Chang

IPC: G11C29/04 ,  G11C29/00 ,  G11C16/14 ,  G11C16/34

CPC classification number: G11C29/82 ,  G11C16/14 ,  G11C16/349 ,  G11C29/04 ,  G11C2029/0409

Abstract: A memory repairing method for a rewritable non-volatile memory module and a memory controller and a memory storage apparatus are provided. The method includes monitoring a wear degree of the rewritable non-volatile memory module; determining whether the wear degree of the rewritable non-volatile memory module is larger than a threshold; and heating the rewritable non-volatile memory module such that the temperature of the rewritable non-volatile memory module lies in between 100° C.˜600° C. if the wear degree of the rewritable non-volatile memory module is larger than the threshold. Accordingly, deteriorated memory cells in the rewritable non-volatile memory module can be repaired, thereby preventing data loss.

Abstract translation: 提供了一种用于可重写非易失性存储器模块和存储器控制器和存储器存储装置的存储器修复方法。 该方法包括监视可重写非易失性存储器模块的磨损程度; 确定可重写非易失性存储器模块的磨损程度是否大于阈值; 并且加热可重写非易失性存储器模块，使得可重写非易失性存储器模块的温度在100℃至600℃之间，如果可重写非易失性存储器模块的磨损程度大于阈值 。 因此，可以修复可重写非易失性存储器模块中的劣化的存储单元，从而防止数据丢失。

公开(公告)号：US20140160844A1

公开(公告)日：2014-06-12

申请号：US13778055

申请日：2013-02-26

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei Lin ,  Yu-Cheng Hsu ,  Kuo-Yi Cheng ,  Chun-Yen Chang

IPC: G11C29/04 ,  G11C16/14

CPC classification number: G11C29/82 ,  G11C16/14 ,  G11C16/349 ,  G11C29/04 ,  G11C2029/0409

Abstract: A memory repairing method for a rewritable non-volatile memory module and a memory controller and a memory storage apparatus are provided. The method includes monitoring a wear degree of the rewritable non-volatile memory module; determining whether the wear degree of the rewritable non-volatile memory module is larger than a threshold; and heating the rewritable non-volatile memory module such that the temperature of the rewritable non-volatile memory module lies in between 100° C.˜600° C. if the wear degree of the rewritable non-volatile memory module is larger than the threshold. Accordingly, deteriorated memory cells in the rewritable non-volatile memory module can be repaired, thereby preventing data loss.

Abstract translation: 提供了一种用于可重写非易失性存储器模块和存储器控制器和存储器存储装置的存储器修复方法。 该方法包括监视可重写非易失性存储器模块的磨损程度; 确定可重写非易失性存储器模块的磨损程度是否大于阈值; 并且加热可重写非易失性存储器模块，使得可重写非易失性存储器模块的温度在100℃至600℃之间，如果可重写非易失性存储器模块的磨损程度大于阈值 。 因此，可以修复可重写非易失性存储器模块中的劣化的存储单元，从而防止数据丢失。