公开(公告)号：US08159822B2

公开(公告)日：2012-04-17

申请号：US12789251

申请日：2010-05-27

申请人： Peter Kanschat ,  Olaf Hohlfeld ,  Thilo Stolze

发明人： Peter Kanschat ,  Olaf Hohlfeld ,  Thilo Stolze

IPC分类号： H05K7/20

CPC分类号： H01L23/24 ,  H01L23/3735 ,  H01L23/4006 ,  H01L24/48 ,  H01L25/072 ,  H01L2023/4062 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01068 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00

摘要： The invention relates to a power semiconductor module including a module housing and at least one substrate populated with at least one power semiconductor chip. The module housing has a bottom side and a top side spaced away from the bottom side in a positive vertical direction. In addition, the substrate has a bottom side facing away from an interior of the module housing. The substrate is arranged in an opening of the module housing configured in its bottom side and attached to the module housing by a resilient bonding agent for freedom of movement of the substrate parallel to the vertical direction in relation to the module housing. In the non-mounted condition of the power semiconductor module, the substrate assumes a resting position in relation to the module housing. To deflect the substrate from the resting position parallel to the vertical direction, a deflection force of 0.1 N to 100 N per mm is applied.

摘要翻译： 本发明涉及一种功率半导体模块，其包括模块壳体和至少一个填充有至少一个功率半导体芯片的衬底。 模块壳体具有在垂直方向上与底侧间隔开的底侧和顶侧。 此外，衬底具有背向模块壳体内部的底侧。 衬底布置在模块壳体的开口中，其构造在其底侧，并通过弹性粘合剂附接到模块壳体，用于相对于模块壳体平行于垂直方向的衬底的运动自由。 在功率半导体模块的非安装状态下，基板相对于模块壳体呈现静止位置。 为了使基板从平行于垂直方向的静止位置偏转，施加0.1N至100N / mm的偏转力。

公开(公告)号：US08134837B2

公开(公告)日：2012-03-13

申请号：US12777656

申请日：2010-05-11

申请人： Olaf Hohlfeld ,  Peter Kanschat ,  Thilo Stolze

发明人： Olaf Hohlfeld ,  Peter Kanschat ,  Thilo Stolze

IPC分类号： H05K7/20

CPC分类号： H01L23/4006 ,  H01L23/3107 ,  H01L25/072 ,  H01L2023/405 ,  H01L2023/4087 ,  H01L2924/0002 ,  H01L2924/00

摘要： A power semiconductor module system includes a power semiconductor module, a heat sink and at least one fastener. The power semiconductor module includes a bottom side with a first thermal contact surface and the heat sink includes a top side with a second thermal contact surface. The power semiconductor module is conjoined with the heat sink by means of the at least one fastener. The power semiconductor module includes a number N1≧1 of first positioning elements and the heat sink a number N2≧1 of second positioning elements. Each of the first positioning elements corresponds to one of the second positioning elements and forms a pair therewith. The power semiconductor module and the heat sink are alignable relative to one another so that the two positioning elements of each of the pairs are interfitted when the power semiconductor module is mounted on the heat sink.

摘要翻译： 功率半导体模块系统包括功率半导体模块，散热器和至少一个紧固件。 功率半导体模块包括具有第一热接触表面的底侧，散热器包括具有第二热接触表面的顶侧。 功率半导体模块通过至少一个紧固件与散热器结合。 功率半导体模块包括N1≥1的第一定位元件和散热器，第二定位元件的数量N2≥1。 第一定位元件中的每一个对应于第二定位元件中的一个并且与其形成一对。 功率半导体模块和散热器可相对于彼此对齐，使得当功率半导体模块安装在散热器上时，每对的两个定位元件互相配合。

公开(公告)号：US20100284153A1

公开(公告)日：2010-11-11

申请号：US12777656

申请日：2010-05-11

申请人： Olaf Hohlfeld ,  Peter Kanschat ,  Thilo Stolze

发明人： Olaf Hohlfeld ,  Peter Kanschat ,  Thilo Stolze

IPC分类号： H05K7/20 ,  H01L21/50

CPC分类号： H01L23/4006 ,  H01L23/3107 ,  H01L25/072 ,  H01L2023/405 ,  H01L2023/4087 ,  H01L2924/0002 ,  H01L2924/00

摘要： A power semiconductor module system includes a power semiconductor module, a heat sink and at least one fastener. The power semiconductor module includes a bottom side with a first thermal contact surface and the heat sink includes a top side with a second thermal contact surface. The power semiconductor module is conjoined with the heat sink by means of the at least one fastener. The power semiconductor module includes a number N1≧1 of first positioning elements and the heat sink a number N2≧1 of second positioning elements. Each of the first positioning elements corresponds to one of the second positioning elements and forms a pair therewith. The power semiconductor module and the heat sink are alignable relative to one another so that the two positioning elements of each of the pairs are interfitted when the power semiconductor module is mounted on the heat sink.

摘要翻译： 功率半导体模块系统包括功率半导体模块，散热器和至少一个紧固件。 功率半导体模块包括具有第一热接触表面的底侧，散热器包括具有第二热接触表面的顶侧。 功率半导体模块通过至少一个紧固件与散热器结合。 功率半导体模块包括N1≥1的第一定位元件和散热器，第二定位元件的数量N2≥1。 第一定位元件中的每一个对应于第二定位元件中的一个并且与其形成一对。 功率半导体模块和散热器可相对于彼此对准，使得当功率半导体模块安装在散热器上时，每对的两个定位元件互相配合。

公开(公告)号：US08514579B2

公开(公告)日：2013-08-20

申请号：US12776639

申请日：2010-05-10

申请人： Thilo Stolze ,  Olaf Hohlfeld ,  Peter Kanschat

发明人： Thilo Stolze ,  Olaf Hohlfeld ,  Peter Kanschat

IPC分类号： H05K7/00

CPC分类号： H01L23/4006 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/49811 ,  H01L24/37 ,  H01L24/39 ,  H01L24/48 ,  H01L25/072 ,  H01L2023/405 ,  H01L2023/4062 ,  H01L2023/4081 ,  H01L2224/371 ,  H01L2224/37599 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H02M7/003 ,  H05K7/209 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The invention relates to a power semiconductor module including a module underside, a module housing, and at least two substrates spaced from each other. Each substrate has a topside facing an interior of the module housing and an underside facing away from the interior of the module housing. The underside of each substrate includes at least one portion simultaneously forming a portion of the module underside. At least one mounting means disposed between two adjacent substrates enables the power semiconductor module to be secured to a heatsink.

摘要翻译： 本发明涉及一种功率半导体模块，其包括模块下侧，模块外壳以及彼此间隔开的至少两个基板。 每个基板具有面向模块壳体内部的顶面和背向模块壳体内部的下侧。 每个基板的下侧包括同时形成模块下侧的一部分的至少一个部分。 设置在两个相邻基板之间的至少一个安装装置使得功率半导体模块能够固定到散热器。

公开(公告)号：US20100302741A1

公开(公告)日：2010-12-02

申请号：US12789251

申请日：2010-05-27

申请人： Peter Kanschat ,  Olaf Hohlfeld ,  Thilo Stolze

发明人： Peter Kanschat ,  Olaf Hohlfeld ,  Thilo Stolze

IPC分类号： H05K7/20 ,  H05K7/00 ,  H01L21/02

CPC分类号： H01L23/24 ,  H01L23/3735 ,  H01L23/4006 ,  H01L24/48 ,  H01L25/072 ,  H01L2023/4062 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01068 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00

摘要： The invention relates to a power semiconductor module including a module housing and at least one substrate populated with at least one power semiconductor chip. The module housing has a bottom side and a top side spaced away from the bottom side in a positive vertical direction. In addition, the substrate has a bottom side facing away from an interior of the module housing. The substrate is arranged in an opening of the module housing configured in its bottom side and attached to the module housing by a resilient bonding agent for freedom of movement of the substrate parallel to the vertical direction in relation to the module housing. In the non-mounted condition of the power semiconductor module, the substrate assumes a resting position in relation to the module housing. To deflect the substrate from the resting position parallel to the vertical direction, a deflection force of 0.1 N to 100 N per mm is applied.

摘要翻译： 本发明涉及一种功率半导体模块，其包括模块壳体和至少一个填充有至少一个功率半导体芯片的衬底。 模块壳体具有在垂直方向上与底侧间隔开的底侧和顶侧。 此外，衬底具有背向模块壳体内部的底侧。 衬底布置在模块壳体的开口中，其构造在其底侧，并通过弹性粘合剂附接到模块壳体，用于相对于模块壳体平行于垂直方向的衬底的运动自由。 在功率半导体模块的非安装状态下，基板相对于模块壳体呈现静止位置。 为了使基板从平行于垂直方向的静止位置偏转，施加0.1N至100N / mm的偏转力。

公开(公告)号：US20100284155A1

公开(公告)日：2010-11-11

申请号：US12776639

申请日：2010-05-10

申请人： Thilo Stolze ,  Olaf Hohlfeld ,  Peter Kanschat

发明人： Thilo Stolze ,  Olaf Hohlfeld ,  Peter Kanschat

IPC分类号： H05K7/00 ,  H01L23/52

CPC分类号： H01L23/4006 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/49811 ,  H01L24/37 ,  H01L24/39 ,  H01L24/48 ,  H01L25/072 ,  H01L2023/405 ,  H01L2023/4062 ,  H01L2023/4081 ,  H01L2224/371 ,  H01L2224/37599 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H02M7/003 ,  H05K7/209 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The invention relates to a power semiconductor module including a module underside, a module housing, and at least two substrates spaced from each other. Each substrate has a topside facing an interior of the module housing and an underside facing away from the interior of the module housing. The underside of each substrate includes at least one portion simultaneously forming a portion of the module underside. At least one mounting means disposed between two adjacent substrates enables the power semiconductor module to be secured to a heatsink.

摘要翻译： 本发明涉及一种功率半导体模块，其包括模块下侧，模块外壳以及彼此间隔开的至少两个基板。 每个基板具有面向模块壳体内部的顶面和背向模块壳体内部的下侧。 每个基板的下侧包括同时形成模块下侧的一部分的至少一个部分。 设置在两个相邻基板之间的至少一个安装装置使得功率半导体模块能够固定到散热器。

公开(公告)号：US08319335B2

公开(公告)日：2012-11-27

申请号：US12752825

申请日：2010-04-01

申请人： Reinhold Bayerer ,  Olaf Hohlfeld ,  Thilo Stolze

发明人： Reinhold Bayerer ,  Olaf Hohlfeld ,  Thilo Stolze

IPC分类号： H01L23/34

CPC分类号： H01L24/72 ,  H01L23/04 ,  H01L23/3735 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/28 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/83 ,  H01L24/85 ,  H01L25/072 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/85947 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/16151 ,  H01L2924/16152 ,  H01L2924/1616 ,  H01L2924/16315 ,  H01L2924/181 ,  H01L2924/2076 ,  H01L2924/3011 ,  Y10T156/10 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/01006 ,  H01L2224/85399 ,  H01L2224/05599

摘要： The invention relates to a power semiconductor module including a power semiconductor chip arranged on a substrate and comprising a bottom side facing the substrate, a top side facing away from the substrate, and an electrical contact face arranged on the top side. A bond wire is bonded to the contact face. At least when the power semiconductor module is fastened to a heatsink, a contact pressure element creates a contact pressure force (F) acting on a sub-portion 36 of a bond wire portion configured between two adjacent bond sites. The contact pressure force (F) results in the power semiconductor chip and a substrate beneath being pressed against the heatsink.

摘要翻译： 本发明涉及一种功率半导体模块，其包括布置在基板上的功率半导体芯片，并且包括面向基板的底侧，背离基板的顶面和布置在顶侧的电接触面。 接合线接合到接触面。 至少当功率半导体模块固定在散热器上时，接触压力元件产生作用在配置在两个相邻的粘结位置之间的接合线部分的子部分36上的接触压力（F）。 接触压力（F）导致功率半导体芯片和下面的衬底压在散热片上。

公开(公告)号：US20100252922A1

公开(公告)日：2010-10-07

申请号：US12752825

申请日：2010-04-01

申请人： Reinhold Bayerer ,  Olaf Hohlfeld ,  Thilo Stolze

发明人： Reinhold Bayerer ,  Olaf Hohlfeld ,  Thilo Stolze

IPC分类号： H01L23/48 ,  B32B37/00

CPC分类号： H01L24/72 ,  H01L23/04 ,  H01L23/3735 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/28 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/83 ,  H01L24/85 ,  H01L25/072 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/85947 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/16151 ,  H01L2924/16152 ,  H01L2924/1616 ,  H01L2924/16315 ,  H01L2924/181 ,  H01L2924/2076 ,  H01L2924/3011 ,  Y10T156/10 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/01006 ,  H01L2224/85399 ,  H01L2224/05599

摘要： The invention relates to a power semiconductor module including a power semiconductor chip arranged on a substrate and comprising a bottom side facing the substrate, a top side facing away from the substrate, and an electrical contact face arranged on the top side. A bond wire is bonded to the contact face. At least when the power semiconductor module is fastened to a heatsink, a contact pressure element creates a contact pressure force (F) acting on a sub-portion 36 of a bond wire portion configured between two adjacent bond sites. The contact pressure force (F) results in the power semiconductor chip and a substrate beneath being pressed against the heatsink.

摘要翻译： 本发明涉及一种功率半导体模块，其包括布置在基板上的功率半导体芯片，并且包括面向基板的底侧，背离基板的顶面和布置在顶侧的电接触面。 接合线接合到接触面。 至少当功率半导体模块固定在散热器上时，接触压力元件产生作用在配置在两个相邻的粘结位置之间的接合线部分的子部分36上的接触压力（F）。 接触压力（F）导致功率半导体芯片和下面的衬底压在散热片上。

公开(公告)号：US08298867B2

公开(公告)日：2012-10-30

申请号：US12850374

申请日：2010-08-04

申请人： Olaf Hohlfeld ,  Jens Goerlich ,  Reinhold Bayerer

发明人： Olaf Hohlfeld ,  Jens Goerlich ,  Reinhold Bayerer

IPC分类号： H01L21/00

CPC分类号： H01L23/3735 ,  H01L23/24 ,  H01L23/49811 ,  H01L24/28 ,  H01L24/29 ,  H01L24/39 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/8584 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/2076 ,  H05K1/0203 ,  H05K1/0306 ,  H05K3/0061 ,  H05K3/341 ,  H05K2201/0373 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/37099

摘要： A power semiconductor module is fabricated by providing a circuit substrate with a metal surface and an insulating substrate comprising an insulation carrier featuring a bottom side provided with a bottom metallization layer. An anchoring structure is provided comprising a plurality of oblong pillars each featuring a first end facing away from the insulation carrier, at least a subset of the pillars being distributed over the anchoring structure in its entirety, it applying for each of the pillars of the subset that from a sidewall thereof no or a maximum of three elongated bonding webs each extend to a sidewall of another pillar where they are bonded thereto. The anchoring structure is positioned between the insulation carrier and metal surface, after which the metal surface is soldered to the bottom metallization layer and anchoring structure by means of a solder packing all interstices between the metal surface and bottom metallization layer with the solder.

摘要翻译： 通过为电路基板提供金属表面和绝缘基板来制造功率半导体模块，所述绝缘基板包括具有设置有底部金属化层的底侧的绝缘载体。 提供了一种锚固结构，其包括多个长方形支柱，每个长方形支柱具有背离绝缘载体的第一端，所述支柱的至少一部分整体分布在锚固结构上，它应用于子集的每个支柱 从其侧壁没有或最多三个细长的粘合幅材每个延伸到另一个柱的侧壁，在其另一个柱的侧壁上。 锚固结构位于绝缘载体和金属表面之间，之后通过焊料将金属表面焊接到底部金属化层和锚定结构，所述金属表面与金属表面和底部金属化层之间的所有间隙都与焊料焊接。

公开(公告)号：US20090243089A1

公开(公告)日：2009-10-01

申请号：US12059188

申请日：2008-03-31

申请人： Olaf Hohlfeld ,  Reinhold Bayerer

发明人： Olaf Hohlfeld ,  Reinhold Bayerer

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： B23K35/262 ,  H01L23/049 ,  H01L23/24 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/488 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/8384 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12043 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K3/0061 ,  H05K3/341 ,  H05K2201/0373 ,  H05K2203/0307 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00015

摘要： A module includes a metallized substrate including a metal layer, a base plate, and a joint joining the metal layer to the base plate. The joint includes solder contacting the base plate and an inter-metallic zone contacting the metal layer and the solder. The inter-metallic zone has spikes up to 100 μm and a roughness (Rz) of at least 20 μm.

摘要翻译： 模块包括金属化基板，其包括金属层，基板和将金属层连接到基板的接头。 接头包括焊接接触基板和与金属层和焊料接触的金属间区域。 金属间区域具有高达100毫米的尖峰和至少20微米的粗糙度（Rz）。