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    Power semiconductor module featuring resiliently supported substrates and method for fabricating a power semiconductor module
    1.
    发明授权
    Power semiconductor module featuring resiliently supported substrates and method for fabricating a power semiconductor module 有权
    具有弹性支撑衬底的功率半导体模块和用于制造功率半导体模块的方法

    公开(公告)号：US08159822B2

    公开(公告)日：2012-04-17

    申请号：US12789251

    申请日：2010-05-27

    申请人： Peter Kanschat ,  Olaf Hohlfeld ,  Thilo Stolze

    发明人： Peter Kanschat ,  Olaf Hohlfeld ,  Thilo Stolze

    IPC分类号： H05K7/20

    CPC分类号： H01L23/24 ,  H01L23/3735 ,  H01L23/4006 ,  H01L24/48 ,  H01L25/072 ,  H01L2023/4062 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01068 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00

    摘要： The invention relates to a power semiconductor module including a module housing and at least one substrate populated with at least one power semiconductor chip. The module housing has a bottom side and a top side spaced away from the bottom side in a positive vertical direction. In addition, the substrate has a bottom side facing away from an interior of the module housing. The substrate is arranged in an opening of the module housing configured in its bottom side and attached to the module housing by a resilient bonding agent for freedom of movement of the substrate parallel to the vertical direction in relation to the module housing. In the non-mounted condition of the power semiconductor module, the substrate assumes a resting position in relation to the module housing. To deflect the substrate from the resting position parallel to the vertical direction, a deflection force of 0.1 N to 100 N per mm is applied.

    摘要翻译： 本发明涉及一种功率半导体模块，其包括模块壳体和至少一个填充有至少一个功率半导体芯片的衬底。 模块壳体具有在垂直方向上与底侧间隔开的底侧和顶侧。 此外，衬底具有背向模块壳体内部的底侧。 衬底布置在模块壳体的开口中，其构造在其底侧，并通过弹性粘合剂附接到模块壳体，用于相对于模块壳体平行于垂直方向的衬底的运动自由。 在功率半导体模块的非安装状态下，基板相对于模块壳体呈现静止位置。 为了使基板从平行于垂直方向的静止位置偏转，施加0.1N至100N / mm的偏转力。

    Twist-secured assembly of a power semiconductor module mountable on a heat sink
    2.
    发明授权
    Twist-secured assembly of a power semiconductor module mountable on a heat sink 有权
    可安装在散热器上的功率半导体模块的扭转固定组件

    公开(公告)号：US08134837B2

    公开(公告)日：2012-03-13

    申请号：US12777656

    申请日：2010-05-11

    申请人： Olaf Hohlfeld ,  Peter Kanschat ,  Thilo Stolze

    发明人： Olaf Hohlfeld ,  Peter Kanschat ,  Thilo Stolze

    IPC分类号： H05K7/20

    CPC分类号： H01L23/4006 ,  H01L23/3107 ,  H01L25/072 ,  H01L2023/405 ,  H01L2023/4087 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A power semiconductor module system includes a power semiconductor module, a heat sink and at least one fastener. The power semiconductor module includes a bottom side with a first thermal contact surface and the heat sink includes a top side with a second thermal contact surface. The power semiconductor module is conjoined with the heat sink by means of the at least one fastener. The power semiconductor module includes a number N1≧1 of first positioning elements and the heat sink a number N2≧1 of second positioning elements. Each of the first positioning elements corresponds to one of the second positioning elements and forms a pair therewith. The power semiconductor module and the heat sink are alignable relative to one another so that the two positioning elements of each of the pairs are interfitted when the power semiconductor module is mounted on the heat sink.

    摘要翻译： 功率半导体模块系统包括功率半导体模块，散热器和至少一个紧固件。 功率半导体模块包括具有第一热接触表面的底侧，散热器包括具有第二热接触表面的顶侧。 功率半导体模块通过至少一个紧固件与散热器结合。 功率半导体模块包括N1≥1的第一定位元件和散热器，第二定位元件的数量N2≥1。 第一定位元件中的每一个对应于第二定位元件中的一个并且与其形成一对。 功率半导体模块和散热器可相对于彼此对齐，使得当功率半导体模块安装在散热器上时，每对的两个定位元件互相配合。

    Twist-Secured Assembly of a Power Semiconductor Module Mountable on a Heat Sink
    3.
    发明申请
    Twist-Secured Assembly of a Power Semiconductor Module Mountable on a Heat Sink 有权
    安装在散热器上的功率半导体模块的扭绞组件

    公开(公告)号：US20100284153A1

    公开(公告)日：2010-11-11

    申请号：US12777656

    申请日：2010-05-11

    申请人： Olaf Hohlfeld ,  Peter Kanschat ,  Thilo Stolze

    发明人： Olaf Hohlfeld ,  Peter Kanschat ,  Thilo Stolze

    IPC分类号： H05K7/20 ,  H01L21/50

    CPC分类号： H01L23/4006 ,  H01L23/3107 ,  H01L25/072 ,  H01L2023/405 ,  H01L2023/4087 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A power semiconductor module system includes a power semiconductor module, a heat sink and at least one fastener. The power semiconductor module includes a bottom side with a first thermal contact surface and the heat sink includes a top side with a second thermal contact surface. The power semiconductor module is conjoined with the heat sink by means of the at least one fastener. The power semiconductor module includes a number N1≧1 of first positioning elements and the heat sink a number N2≧1 of second positioning elements. Each of the first positioning elements corresponds to one of the second positioning elements and forms a pair therewith. The power semiconductor module and the heat sink are alignable relative to one another so that the two positioning elements of each of the pairs are interfitted when the power semiconductor module is mounted on the heat sink.

    摘要翻译： 功率半导体模块系统包括功率半导体模块，散热器和至少一个紧固件。 功率半导体模块包括具有第一热接触表面的底侧，散热器包括具有第二热接触表面的顶侧。 功率半导体模块通过至少一个紧固件与散热器结合。 功率半导体模块包括N1≥1的第一定位元件和散热器，第二定位元件的数量N2≥1。 第一定位元件中的每一个对应于第二定位元件中的一个并且与其形成一对。 功率半导体模块和散热器可相对于彼此对准，使得当功率半导体模块安装在散热器上时，每对的两个定位元件互相配合。

    POWER SEMICONDUCTOR MODULE FEATURING RESILIENTLY SUPPORTED SUBSTRATES AND METHOD FOR FABRICATING A POWER SEMICONDUCTOR MODULE
    4.
    发明申请
    POWER SEMICONDUCTOR MODULE FEATURING RESILIENTLY SUPPORTED SUBSTRATES AND METHOD FOR FABRICATING A POWER SEMICONDUCTOR MODULE 有权
    功率半导体模块特征支持的基板和用于制造功率半导体模块的方法

    公开(公告)号：US20100302741A1

    公开(公告)日：2010-12-02

    申请号：US12789251

    申请日：2010-05-27

    申请人： Peter Kanschat ,  Olaf Hohlfeld ,  Thilo Stolze

    发明人： Peter Kanschat ,  Olaf Hohlfeld ,  Thilo Stolze

    IPC分类号： H05K7/20 ,  H05K7/00 ,  H01L21/02

    CPC分类号： H01L23/24 ,  H01L23/3735 ,  H01L23/4006 ,  H01L24/48 ,  H01L25/072 ,  H01L2023/4062 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01068 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00

    摘要： The invention relates to a power semiconductor module including a module housing and at least one substrate populated with at least one power semiconductor chip. The module housing has a bottom side and a top side spaced away from the bottom side in a positive vertical direction. In addition, the substrate has a bottom side facing away from an interior of the module housing. The substrate is arranged in an opening of the module housing configured in its bottom side and attached to the module housing by a resilient bonding agent for freedom of movement of the substrate parallel to the vertical direction in relation to the module housing. In the non-mounted condition of the power semiconductor module, the substrate assumes a resting position in relation to the module housing. To deflect the substrate from the resting position parallel to the vertical direction, a deflection force of 0.1 N to 100 N per mm is applied.

    摘要翻译： 本发明涉及一种功率半导体模块，其包括模块壳体和至少一个填充有至少一个功率半导体芯片的衬底。 模块壳体具有在垂直方向上与底侧间隔开的底侧和顶侧。 此外，衬底具有背向模块壳体内部的底侧。 衬底布置在模块壳体的开口中，其构造在其底侧，并通过弹性粘合剂附接到模块壳体，用于相对于模块壳体平行于垂直方向的衬底的运动自由。 在功率半导体模块的非安装状态下，基板相对于模块壳体呈现静止位置。 为了使基板从平行于垂直方向的静止位置偏转，施加0.1N至100N / mm的偏转力。

    Semiconductor module arrangement and method
    9.
    发明授权
    Semiconductor module arrangement and method 有权
    半导体模块的布置和方法

    公开(公告)号：US08253237B2

    公开(公告)日：2012-08-28

    申请号：US11846278

    申请日：2007-08-28

    申请人： Peter Kanschat ,  Thilo Stolze

    发明人： Peter Kanschat ,  Thilo Stolze

    IPC分类号： H01L23/48

    CPC分类号： H01L23/4093 ,  H01L25/072 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A power semiconductor arrangement and method is disclosed. One embodiment provides a power semiconductor module. An insulator is arranged between the module and a cooling element, increasing clearances between the power semiconductor module and the cooling element.

    摘要翻译： 公开了一种功率半导体装置和方法。 一个实施例提供功率半导体模块。 在模块和冷却元件之间布置有绝缘体，增加功率半导体模块和冷却元件之间的间隙。

    Power semiconductor module and method for its manufacture
    10.
    发明授权
    Power semiconductor module and method for its manufacture 有权
    功率半导体模块及其制造方法

    公开(公告)号：US07701054B2

    公开(公告)日：2010-04-20

    申请号：US11673929

    申请日：2007-02-12

    申请人： Thilo Stolze ,  Klaus Schiess ,  Peter Kanschat

    发明人： Thilo Stolze ,  Klaus Schiess ,  Peter Kanschat

    IPC分类号： H01L23/10

    CPC分类号： H01L25/072 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A power semiconductor module 3 for mounting on a cooling element 4 has at least one substrate 2, on which one or more components 5, 6, 7 are mounted and a module housing 40. The module housing 40 surrounds at least partially the at least one substrate 2. The module housing 40 has opposite sides with a first side facing the cooling element 4, and a second side 42 having one or more openings and a surface turned away from the power semiconductor module 3. Each of the one or more openings has a border, which is sealed by an internal contact 16, 17, 18, 27, 28, which is electrically connected to the one or more components 5, 6, 7. The internal contact protrudes the module housing 40, such that the internal contact not extends beyond said surface of the second side 42 of the module housing 40.

    摘要翻译： 用于安装在冷却元件4上的功率半导体模块3具有至少一个基板2，其上安装有一个或多个部件5,6,7和模块壳体40.模块壳体40至少部分地包围至少一个 模块壳体40具有相对的侧面，其具有面对冷却元件4的第一侧，以及具有一个或多个开口的第二侧42和远离功率半导体模块3的表面。所述一个或多个开口中的每一个具有 该边界由电连接到一个或多个部件5,6,7的内部接触件16,17,18,27,28密封。内部触头突出模块壳体40，使得内部触点 不延伸超过模块壳体40的第二侧42的所述表面。